激光尘埃粒子计数器微型光学传感器的研究

研制成功便携式激光尘埃粒子计数器的核心部件——微型光学传感器。该传感器采用直角散射光收集形式。以高功率半导体激光器作为光源，同时采用高性能的PIN型光电二极管作为光电探测器。散射光收集系统为单一大数值孔径的球面反射镜，其对粒子散射光的收集角范围从20°到160°。粒子散射光信号是脉冲信号，其频谱成份主要在高频段，所以在PIN型光电二极管后用一个带通式前置放大器来消除外界的低频噪声．根据米氏散射理论计算了该光学传感器的光散射响应特性，并用聚苯乙烯标准粒子实测了该光学传感器的性能。结果表明，该系统具有高的信噪

Ti：LiAlO2新型晶体的结构分析

通过研究提拉法生长的掺杂Ti浓度为0.2at%的LiAlO2晶体吸收光谱,荧光光谱和红外光谱,来分析此新型晶体的结构.分析发现光谱中仅出现了四价Ti离子的196nm的特征吸收峰,用235nm光激发得到384nm的特征发射峰;针对吸收光谱中660-820nm出现的四个弱小吸收峰提出了一个色心模型,从而解释了空气和富Li气氛处理后吸收峰消失的现象;对比纯LiAlO2晶体的红外光谱发现,Ti的掺入仅影响了[AlO4]键强,而[LiO4]及相关键强几乎不变;结合ICP测试估算出直径50mm,厚1mm的Ti：LiA

多层介质膜脉冲压缩光栅近场光学特性分析

利用傅里叶模式理论分析了TE波自准直角入射的使用条件下，多层介质膜光栅的光栅区和多层膜区电场分布的特点．分别讨论了HfO2和SiO2为顶层光栅材料时，光栅结构参数对光栅脊峰值电场的影响，结果表明，对于不同膜厚的顶层材料，存在一个最佳膜厚度，使光栅脊峰值电场最小，并且当膜厚增大时，设计大高宽比的光栅可以降低该电场峰值．最后，在大角度条件下使用多层膜光栅也可以降低光栅脊处的峰值电场．

电子束蒸发氧化锆薄膜的粗糙度和光散射特性

利用电子束蒸发工艺，以Ag层为衬底，沉积了中心波长为632．8nm的氧化锆（ZrO2）薄膜，膜层厚度在80-480nm范围内变化．研究了不同厚度样品的粗糙度变化规律和表面散射特性．结果发现，随着膜层厚度的逐渐增加．其表面均方根（RMS）粗糙度和总积分散射（TIS）均呈现出先减小后增大的趋势．利用非相关表面粗糙度的散射模型对样品的TIS特性进行了理论计算，所得结果与测量结果相一致．

多层介质膜脉冲宽度压缩光栅与超短脉冲作用时的性能分析

基于啁啾脉冲放大技术的超短脉冲激光系统是提供超快、超强激光的重要途径，具有良好输出波形和高损伤阈值的多层介质膜脉冲宽度压缩光栅是获得高峰值功率脉冲激光的关键。基于傅里叶谱变换方法和严格模式理论，分析了多层介质膜光栅（MDG）在超短脉冲作用下的光学特性。结果表明，当MDG的反射带宽小于具有高斯分布的入射脉冲的频谱宽度时，-1级反射脉冲呈非对称高斯分布，其前沿出现振荡，并且-1级反射脉冲能量开始剧烈下降，讨论了MDG结构参数对其反射带宽的影响。分析了MDG与超短脉冲作用时的近场光分布，对提高其抗激光损伤特性具

Multimode resonances in metallically confined square-resonator microlasers

Directional emission InP/AlGaInAs square-resonator microlasers with a side length of 20 mu m are fabricated by standard photolithography and inductively coupled-plasma etching technique. Multimode resonances with about seven distinct mode peaks in a free-spectral range are observed from 1460 to 1560 nm with the free-spectral range of 12.1 nm near the wavelength of 1510 nm, and the mode refractive index versus the photon energy E (eV) as 3.07152+0.18304E are obtained by fitting the laser spectra with an analytical mode wavelength formula derived by light ray method. In addition, mode field pattern is simulated for cold cavity by two dimensional finite-difference time-domain technique.

Enhancement of the far-field output power and the beam properties of plasmonic very small aperture lasers

The properties of plasmonic very small aperture lasers are shown: these integrate surface plasmon structures with very small aperture lasers. The transmission field can be confined to a spot of subwavelength width in the far field, and according to the finite difference time domain simulation results the focal length of the spot can be modulated using different ring periods. Scanning of the subwavelength gating in the far field has been realized numerically. Such a device can be used with a high-resolution far-field scanning optical microscope.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Oil-immersion or solid-immersion power enhancement of very-small-aperture lasers

An analysis of the enhancement of light transmission through a sub-wavelength aperture by oil- or solid-immersion is presented in this letter. An output power enhancement phenomenon related to the oil-immersion or solid-immersion mechanism is realized experimentally and reported for a very small aperture laser, which is an agreement with simulation analysis. This phenomenon could be useful for future optical data storage, microscopy and lithography.

Electron g factors and optical properties of InAs quantum ellipsoids

The electronic structure, electron g factors and optical properties of InAs quantum ellipsoids are investigated, in the framework of the eight-band effective-mass approximation. It is found that the light-hole states come down in comparison with the heavy-hole states when the spheres are elongated, and become the lowest states of the valence band. Circularly polarized emissions under circularly polarized excitations may have opposite polarization factors to the exciting light. For InAs ellipsoids the length, which is smaller than 35 nm, is still in a strongly quantum-confined regime. The electron g factors of InAs spheres decrease with increasing radius, and are nearly 2 when the radius is very small. The quantization of the electron states quenches the orbital angular momentum of the states. Actually, as some of the three dimensions increase, the electron g factors decrease. As more dimensions increase, the g factors decrease more. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension. The magnetic field along the z axis of the crystal structure causes linearly polarized emissions in the spheres, which emit unpolarized light in the absence of magnetic field.

Fabrication process and power and lifetime characteristics of very-small-aperture laser

High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

Micro-Raman study on hydrogenated protocrystalline silicon films

Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio.

Raman scattering studies of III-V semiconductors grown on [n11]-oriented substrates

The room temperature Raman spectra of the Ga(0.5)Al(0.5)AS and the In0.52Al0.48As epilayer grown on [n11]-oriented substrates were measured in various back scatterng geometries, The relative intensity of TO modes and LO modes in those samples shows a regular Variation with differently oriented substrates in the experiments. By comparing experimental data with Raman scattering selection rules for the zincblende structure epilayer grown on [n11]-oriented substrates, it was found that the present calculations are in good agreement with the experimental results.

The photon scanning tunneling microscope and its applications

A simple photon scanning tunneling microscope (PSTM) is described. Its lateral resolution (similar to 10nm with a maximal scanning range of 10 mu m x 10 mu m ) is much better than that of a conventional optical microscope. Its principle, the fiber optic tip fabrication and PSTM images of different samples such as mica, HDPE and LiNbO3 are presented.