EVALUATION OF FILM-SUBSTRATE ADHESION VIA IMPACT USING COATED BULLETS

A method was devised to evaluate the adhesion between a film and a substrate. A front-end coated bullet is accelerated by a gas gun and hits the substrate of the specimen under test. The impact generates a compressive stress pulse that propagates toward the film. After transmission through the interface, part of the pulse is reflected on the free surface of the film, and tensile stress arises at the film-substrate interface, possibly inducing debonding of the film. This dynamic process was demonstrated analytically and simulated numerically by the finite element method. The results validate the initial concept and lay the foundation for further optimization of this method.

A new method and instrument for accurately measuring interval between ultrashort pulses

Using second-order autocorrelation conception, a novel method and instrument for accurately measuring interval between two linearly polarized ultrashort pulses with real time were presented. The experiment demonstrated that the measuring method and instrument were simple and accurate (the measurement error <5 fs). During measuring, there was no moving element resulting in dynamic measurement error.

Finite element analysis on a circular wedge prism with 400 mm diameter

The paper comprehensively analyzes the distortions of a circular wedge prism with 400 mm diameter in a scanner by method of optical-mechanical-thermal integrating analysis. The structure and intensity of the prism assembly is verified and checked, and the surface deformations of the prism under gravity load, as well as the thermo-elastic distortions of the prism, are analyzed in detail and evaluated, which is finally contrasted with the measured values of Zygo Mark interferometer. The results show: the maximal distortion of the prism assembly is 10 nm magnitude and the maximal stress is 0.441 Mpa, which has much tolerance to the precision requirement of structure and the admissible stress of material; the influence of heat effect on the surface deformations of prism is proved to be far greater than the influence of gravity load, so some strict temperature-controlled measures are to be considered when the scanner is used. (c) 2006 Elsevier GmbH. All rights reserved.

Corrections to the paraxial approximation of an arbitrary free-propagation beam

A relatively simple transform from an arbitrary solution of the paraxial wave equation to the corresponding exact solution of the Helmholtz wave equation is derived in the condition that the evanescent waves are ignored and is used to study the corrections to the paraxial approximation of an arbitrary free-propagation beam. Specifically, the general lowest-order correction field is given in a very simple form and is proved to be exactly consistent with the perturbation method developed by Lax et nl. [Phys. Rev. A 11, 1365 (1975)]. Some special examples, such as the lowest-order correction to the paraxial approximation of a fundamental Gaussian beam whose waist plane has a parallel shin from the z = 0 plane, are presented. (C) 1998 Optical Society of America.

Effect of elliptical manufacture error of an axicon on the diffraction-free beam patterns

Based on the generalized Huygens-Fresnel diffraction integral theory and the stationary-phase method, we analyze the influence on diffraction-free beam patterns of an elliptical manufacture error in an axicon. The numerical simulation is compared with the beam patterns photographed by using a CCD camera. Theoretical simulation and experimental results indicate that the intensity of the central spot decreases with increasing elliptical manufacture defect and propagation distance. Meanwhile, the bright rings around the central spot are gradually split into four or more symmetrical bright spots. The experimental results fit the theoretical simulation very well. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Optimization of thermal environment during crystal growth of large-sized Nd : YAG by Temperature Gradient Technique

A finite-element model is employed to analysis the thermal environments in Temperature Gradient Technique (TGT) furnace during the growth of large-sized Nd:YAG crystal. The obtained results show that when the crucible is located at the lower position inside of the heater, a flatter solid-liquid interface is established, which makes it easier to obtain the core-free Nd:YAG crystal. Meanwhile, the lower crucible position can induce higher axial temperature gradient, which is beneficial to the release of latent heat. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film

Negative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film. (c) 2006 Elsevier B.V. All rights reserved.

Estimation of the detection probability for Yangtze finless porpoises (Neophocaena phocaenoides asiaeorientalis) with a passive acoustic method

Yangtze finless porpoises were surveyed by using simultaneous visual and acoustical methods from 6 November to 13 December 2006. Two research vessels towed stereo acoustic data loggers, which were used to store the intensity and sound source direction of the high frequency sonar signals produced by finless porpoises at detection ranges up to 300 m on each side of the vessel. Simple stereo beam forming allowed the separation of distinct biosonar sound source, which enabled us to count the number of vocalizing porpoises. Acoustically, 204 porpoises were detected from one vessel and 199 from the other vessel in the same section of the Yangtze River. Visually, 163 and 162 porpoises were detected from two vessels within 300 m of the vessel track. The calculated detection probability using acoustic method was approximately twice that for visual detection for each vessel. The difference in detection probabilities between the two methods was caused by the large number of single individuals that were missed by visual observers. However, the sizes of large groups were underestimated by using the acoustic methods. Acoustic and visual observations complemented each other in the accurate detection of porpoises. The use of simple, relatively inexpensive acoustic monitoring systems should enhance population surveys of free-ranging, echolocating odontocetes. (C) 2008 Acoustical Society of America.

Estimated detection distance of a baiji's (Chinese river dolphin, Lipotes vexillifer) whistles using a passive acoustic survey method

Source levels and phonation intervals of whistles produced by a free-ranging baiji (Chinese river dolphin) were measured in the seminatural reserve of Shishou in Hubei, China. A total of 43 whistles were recorded over 12 recording sessions. The mean dominant frequency (the frequency at the highest energy) was 5.7 kHz (s.d.=0.67). The calculated source level was 143.2 dB rms re 1 mu Pa (s.d.=5.8). Most phonation intervals were shorter than 460 s, and the average interval was 205 s (s.d. = 254). Theoretical detection range of baiji's whistle was 6600 m at the present study site, but it could reduce a couple of hundred meters in practical noisy situation in the Yangtze River. Sporadic phonation (205 s interval on average) with relatively faint signal of baiji was considered, to be difficult to be detected by a towing hydrophone system. Stationed monitoring or slow speed towing of hydrophones along the river current is recommended. (c) 2006 Acoustical Society of America.

A passive acoustic monitoring method applied to observation and group size estimation of finless porpoises

The present study aimed at determining the detection capabilities of an acoustic observation system to recognize porpoises under local riverine conditions and compare the results with sighting observations. Arrays of three to five acoustic data loggers were stationed across the main channel of the Tian-e-zhou Oxbow of China's Yangtze River at intervals of 100-150 m to record sonar. signals of free-ranging finless porpoises (Neophocaena phocaenoides). Acoustic observations, concurrent with visual observations, were conducted at two occasions on 20-22 October 2003 and 17-19 October 2004. During a total of 42 h of observation, 316 finless porpoises were sighted and 7041 sonar signals were recorded by loggers. The acoustic data loggers recorded ultrasonic signals of porpoises clearly, and detected the presence of porpoises with a correct detection level of 77.6% and a false alarm level of 5.8% within an effective distance of 150 m. Results indicated that the stationed passive acoustic observation method was effective in detecting the presence of porpoises and showed potential in estimating the group size. A positive linear correlation between the number of recorded signals and the group size of sighted porpoises was indicated, although it is faced with some uncertainty and requires further investigation. (C) 2005 Acoustical Society of America.

Study of GaN growth on ultra-thin Si membranes

10 mu m-thick ultra-thin Si (111) membranes for GaN epi-layers growth were successfully fabricated on silicon-on-insulator (SOI) substrate by backside etching the handle Si and buried oxide (BOX) layer. Then 1 mu m-thick GaN layers were deposited on these Si membranes by metal-organic chemical vapor deposition (MOCVD). The crack-free areas of 250 mu m, x 250 mu m were obtained on the GaN layers due to the reduction of thermal stress by using these ultra-thin Si membranes, which was further confirmed by the photoluminescence (PL) spectra and the simulation results from the finite element method calculation by using the software of ANSYS. In this paper, a newly developed approach was demonstrated to utilize micromechanical structures for GaN growth, which would improve the material quality of the epi-layers and facilitate GaN-based micro electro-mechanical system (MEMS) fabrication, especially the pressure sensor, in the future applications. (C) 2008 Elsevier Ltd. All rights reserved.

Chirp-free optical modulation using a silicon push-pull coupling microring

We propose a silicon ring-based optical modulation method to perform chirp-free optical modulations. In this scheme, we locate the light to be modulated at the resonance of the ring and tune the coupling coefficient between the ring and the straight waveguide by using a push-pull coupling structure. The chirp-free phase modulation can be achieved by varying the coupling coefficient in a large range, which can modify the coupling condition of the ring such that the input light experiences an abrupt phase shift of pi at the output. If the coupling coefficient is adjusted in a small range such that the coupling condition of the ring is kept unchanged, only the intensity of the light will be modulated. This leads to chirp-free intensity modulation. Our simulations performed at 10 Gbits/s confirm the feasibility of the proposal. (C) 2009 Optical Society of America

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Comparison of free spectral range and quality factor for two-dimensional square and circular microcavities

Free spectral range of whispering-gallery (WG)-like modes in a two-dimensional (2D) square microcavity is found to be twice that in a 2D circular microcavity. The quality factor of the WG-like mode with the low mode number in a 2D square microcavity, calculated by the finite-difference time-domain (FDTD) technique and the Pade approximation method, is found to exceed that of the WG mode in 2D circular microcavity with the same cavity dimension and close mode wavelength.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.