106 resultados para complementary-metal-oxide semiconductor (CMOS) image sensor


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An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.

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Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.

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Isolated transition metal ions/oxides in molecular sieves and on surfaces are a class of active sites for selective oxidation of hydrocarbons. Identifying the active sites and their coordination structure is vital to understanding their essential role played in catalysis and designing and synthesizing more active and selective catalysts. The isolated transition metal ions in the framework of molecular sieves (e.g., TS-1, Fe-ZSM-5, and V-MCM-41) or on the surface of oxides (e.g., MoO3/Al2O3 and TiO2/SiO2) were successfully identified by UV resonance Raman spectroscopy. The charge transfer transitions between the transition metal ions and the oxygen anions are excited by a UV laser and consequently the UV resonance Raman effect greatly enhances the Raman signals of the isolated transition metal ions. The local coordination of these ions in the rigid framework of molecular sieves or in the relatively flexible structure on the surface can also be differentiated by the shifts of the resonance Raman bands. The relative concentration of the isolated transition metal ion/oxides could be estimated by the intensity ratio of Raman bands. This study demonstrates that the UV resonance Raman spectroscopy is a general technique that can be widely applied to the in-situ characterization of catalyst synthesis and catalytic reactions. (C) 2003 Elsevier Science (USA). All rights reserved.

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Hydrogenolysis of mono(cyclopentadienyl)-ligated rare-earth-metal bis(alkyl) complexes Cp'Ln-(CH2SiMe3)2(THF) (Ln = Y (1a), Dy (1b), Lu (1c); Cp' = C5Me4SiMe3) with PhSiH3 afforded the mixed hydride/alkyl complexes [Cp'Ln(mu-H)(CH2SiMe3)(THF)](2) (Ln = Y (2a), Dy (2b), Lu (2c)). The overall structure of complexes 2a-c is a C-2-symmetric dimer containing a planar symmetric Ln(2)H(2) core at the center of the molecule. Deprotonation of ArOH (Ar = C6H2-Bu-t(2)-2,6-Me-4) by the metal alkyl group of 2a-c led to formation of the mixed hydride/aryloxide derivatives [Cp'Ln(mu-H)(OAr)](2) (Ln = Y (3a), Dy (3b), Lu (3c)), which adopt the dimeric structure through hydride bridges with trans-accommodated terminal aryloxide groups.

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In this paper, we present a facile and general synthetic route to high-quality alkaline earth metal fluoride (AEF(2), AE = Ca, Sr, Ba) nanocrystals and CaF2:Tb3+ nanocrystals based on the thermal decomposition of corresponding trifluoroacetate precursors in hot oleylamine. X-ray diffraction, transmission electron microscopy, thermogravimetric and differential thermal analysis, Fourier transform infrared spectra, photoluminescence spectra, and kinetic decays were employed to characterize the samples. The use of single-source precursors plays an important role in the formation of high-quality AEF(2) nanocrystals, and the formation process is demonstrated in detail.

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The syntheses of several dialkyl complexes based on rare-earth metal were described. Three beta-diimine compounds with varying N-aryl substituents (HL1 = (2-CH3O(C6H4))N=C(CH3)CH=C(CH3)NH(2-CH3O(C6H4)), HL2 = (2,4,6-(CH3)(3) (C6H2))N=C(CH3)CH=C(CH3)NH(2,4,6-(CH3)(3)(C6H2)), HL3 = PhN=C(CH3)CH(CH3) NHPh) were treated with Ln(CH2SiMe3)(3)(THF)(2) to give dialkyl complexes L(1)Ln (CH2SiMe3)(2) (Ln = Y (1a), Lu (1b), Sc (1c)), L(2)Ln(CH2SiMe3)(2)(THF) (Ln = Y (2a), Lu (2b)), and (LLu)-Lu-3(CH2SiMe3)(2)(THF) (3). All these complexes were applied to the copolymerization of cyclohexene oxide (CHO) and carbon dioxide as single-component catalysts.

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We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.

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In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

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We initially report an electrochemical sensing platform based on molecularly imprinted polymers (MIPs) at functionalized Indium Tin Oxide Electrodes (ITO). In this research, aminopropyl-derivatized organosilane aminopropyltriethoxysilane (APTES), which plays the role of functional monomers for template recognition, was firstly self-assembled on an ITO electrode and then dopamine-imprinted sol was spin-coated on the modified surface. APTES which can interact with template dopamine (DA) through hydrogen bonds brought more binding sites located closely to the surface of the ITO electrode, thus made the prepared sensor more sensitive for DA detection. Potential scanning is presented to extract DA from the modified film, thus DA can rapidly and completely leach out. The affinity and selectivity of the resulting biomimetic sensor were characterized using cyclic voltammetry (CV). It exhibited an increased affinity for DA over that of structurally related molecules, the anodic current for DA oxidation depended on the concentration of DA in the linear range from 2 x 10(-6) M to 0.8 x 10(-3) M with a correlation coefficient of 0.9927.In contrast, DA-templated film prepared under identical conditions on a bare ITO showed obviously lower response toward dopamine in solution.

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Accurate ab initio density-functional calculations are performed to investigate the relationship of the ground-state crystal structures and electronic properties of Ag2BiO3 compound. The results indicate that Ag2BiO3 in Pnna phase, in which the bismuth atoms occupy the same Wyckoff positions, exhibits metallic conductivity, while in Pnn2 and Pn phases, Ag2BiO3 exhibits semiconducting character, which is in agreement with the experimental results. Charge ordering is indeed induced by the crystal inversion twin in the Pnn2 phase compared with the Pnna phase. In the low temperature phase Pn, the charge ordering is similar to that of Pnn2 phase although it is more distorted in Pn phase. In addition, the calculation indicates that the charge ordering is caused in the 6s electron rearrangement.

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The block copolymer polystyrene-b-poly[2-(trimethylsilyloxy)ethylene methacrylate] (PSt-b-PTMSEMA) was synthesized using atom-transfer radical polymerization (ATRP). The hydrolysis of PSt-b-PTMSEMA led to the formation of an amphiphilic block copolymer, polystyrene-b-poly(2-hydroxylethyl methacrylate) (PSt-b-PHEMA), which was characterized by GPC and H-1-NMR. TEM showed that the PSt-b-PHEMA formed a micelle, which is PSt as the core and PHEMA as the shell. Under appropriate conditions, the nickel or cobalt ion cause chemical reactions in these micelles and could be reduced easily. ESCA analysis showed that before reduction the metal existed as a hydroxide; after reduction, the metal existed as an oxide, and the metal content of these materials on the surface is more than that on the surface of the copolymer metal ion. XRD analysis showed that the metal existed as a hydroxide before reduction and existed as a metal after reduction.

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In this paper, the fabrication method of a new type of carbon monoxide gas sensor based on SnOx with low power consumption and its sensing characteristics have been reported. The electric conductance of this type of sensor evolves oscillation form regularly when the sensor is exposed to low level of CO gas. The oscillation amplitude is directly proportional to the concentration of CO gas over a wide range. The effects of relevant factors. such as. humidity, temperature and interference gases on the sensor properties were examined. The sensing oscillation response mechanism was also discussed.

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Ln(2)Mo(3)O(12) and Ce2Mo3O12.25 are reduced by hydrogen yielding Mo4+ oxides of the formula Ln(2)Mo(3)O(9) (Ln = La, Ce, Pr, Nd, Sm, Gd and Dy). The new compound Ce2Mo3O9 has the same structure as other Ln(2)Mo(3)O(9) compounds. All of the products are single phase materials and crystallize in a tetragonal scheelite type structure with Mo2O6 clusters. The IR spectra of the Ln(2)Mo(3)O(9) oxides show two absorption bands. These compounds are black n-type semiconductors, and exhibit Curie-Weiss Law behavior from 100K to 250K. Temperature dependence of the electrical properties of these compounds were measured for the first time, and a semiconductor-metal transition was found at about 250 degrees C.

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The compound La2MoO5 has a cubic fluorite symmetry. There is strong interaction between the two molybdenum ions (IV). The cubic-La2MoO5 oxide contains separated Mo2O8 clusters and is a semiconductor. The electrical resistivity measurement shows a semiconductor-metal transition around 250 degrees C. Temperature dependence of magnetic susceptibility represents the Curie-Weiss law. The compound La2MoO5 exhibits a paramagnetic behaviour from 170-250 K.