Facile synthesis and photoluminescence of europium ion doped LaF3 nanodisks

LaF3 : Eu3+ (5.0 mol-% EU3+) nanodisks with perfect crystallinity were successfully synthesized by a simple method. The synthesis was carried out in an aqueous solution at room temperature without the use of templates or organic additives, The mechanism of formation of the nanodisks was explored, and the fluoride source (KBF4) is believed to play a key role in controlling the morphology of the final product. Furthermore, the size of the disk can be simply moderated by varying the concentration of the initial reactants. The room-temperature photoluminescence of LaF3 : Eu3+ with different morphologies and sizes were also investigated, and the results indicate that the emission intensity of the product is strongly affected by their size, shape, and other factors.

Hexagonal nanodisks of cadmium hydroxide and oxide with nanoporous structure

In this work we demonstrate that hexagonal nanodisks of cadmium hydroxide with nanoporous structures could be fabricated by a facile hydrothermal treatment without using any templates or organic additives. With this method, the length of the hexagonal edge and thickness of the nanodisks can be adjusted through controlling the experimental conditions such as the pH value of the mother liquor and the initial concentration of the cadmium ion. On the basis of our experimental observations and understandings of the nanocrystal growth, the formation of the nanodisks is believed to mainly originate from the oriented attachment of small particles. Furthermore, the hexagonal Cd(OH)(2) nanodisks can be converted to CdO semiconductors with similar morphology by calcinations.

White organic electroluminescence based on a new boron complex

A bright blue boron complex BPh2(pybm) containing 2-(2-pyridyl)benzimidazole ligand was designed and synthesized by using N, N-bidentate ligand instead of N, O-bidentate one such as 8-quinolinol. For three-layer LED devices with the configuration of ITO/NPB/BPh2(pybm)/Alq(3)/LiF/Al, the white light emission covering the whole visible region from 400 to 750 nm with the maximum brightness of 110 cd/m(2) and the luminous efficiency of 0.8 cd/A was observed.

Sintering of nanopowders of amorphous silicon nitride under ultrahigh pressure

Nanopowders of amorphous silicon nitride were densified and sintered without additives under ultrahigh pressure (1.0-5.0 GPa) between room temperature and 1600 degrees C. The powders had a mean diameter of 18 nm and contained similar to 5.0 wt% oxygen that came from air-exposure oxidation, Sintering results at different temperatures were characterized in terms of sintering density, hardness, phase structure, and grain size. It was observed that the nanopowders can be pressed to a high density (87%) even at room temperature under the high pressure. Bulk Si3N4 amorphous and crystalline ceramics (relative density: 95-98%) were obtained at temperatures slightly below the onset of crystallization (1000-1100 degrees C and above 1420 degrees C, respectively. Rapid grain growth occurred during the crystallization leading to a grain size (>160 nm) almost 1 order of magnitude greater than the starting particulate diameters, With the rise of sintering temperature, a final density was reached between 1350 and 1420 degrees C, which seemed to be independent of the pressure applied (1.0-5.0 GPa), The densification temperature observed under the high pressure is lower by 580 degrees C than that by hot isostatic pressing sintering, suggesting a significantly enhanced low-temperature sintering of the nanopowders under a high external pressure.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0-5.0 GPa) between 800 and 1700 degreesC were investigated. A greatly enhanced crystallization and alpha-beta transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4, began to crystallize at a temperature as low as 1000 degreesC (to transform to alpha modification). The subsequent alpha-beta transformation occurred completed between 1350 and 1420 degreesC after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N-2, the identical amorphous materials were stable up to 1400 degreesC without detectable crystallization, and only a small amount of a phase was detected at 1500 degreesC. The crystallization temperature and the alpha-beta transformation temperatures are reduced by 200-350 degreesC compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4, were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Li_8SiN_4-Li_3N-BN体系中立方BN转化行为的研究

研究了高温高压下x·Li_8SiN_4-0.1(1-x)·Li_3N-0.9(1-x)·BN体系中立方氮化硼(cBN)的转化行为。Li_8SiN_4的存在可显著改善cBN晶体的发育,提高晶体质量。在4.2～5.5GPa,1340～1750℃范围内确定了x=4.8％时体系的cBN转化区,并对转化区内cBN转化率、平均生长速度、成核速度及破碎强度与转化温度和压力的关系进行了研究。

Synthesis of nanometric-size magnesium nitride by the nitriding of pre-activated magnesium powder

Magnesium nitride (Mg3N2) was synthesized by the reaction of magnesium in the highly reactive form (Mg*) with nitrogen at 450 degrees C under normal pressure. The effect of doping with nickel dichloride on the nitridation of Mg* was investigated. Differential thermal analysis (DTA) of Mg* systems and transmission electron microscopy (TEM) measurement of the product formed were carried out. TEM measurement showed that the particle size of the Mg3N2 synthesized was in the nanometric range. The dependence of nitridation of the NiCl2-doped Mg* on temperature was investigated at temperatures ranging from 300 to 500 degrees C. The nitridation of NiCl2-doped Mg* could occur even at temperature as low as 300 degrees C. (C) 1999 Kluwer Academic Publishers.