100 resultados para Ti-6Al-7Nb alloy


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采用传统无压烧结工艺制备出透明性良好的掺Ti氧化铝陶瓷;测定了该陶瓷的吸收光谱、荧光光谱和激发光谱。结果表明,掺Ti氧化铝透明陶瓷样品在Mg与Ti掺入离子的摩尔比(NMg/NTi)较小时,表现出Ti^3+离子的490nm特征吸收峰,即^2T2→^2E跃迁产生的宽带吸收;NMg/NTi较大时,陶瓷样品吸收光谱中不存在Ti^3+离子吸收,其250nm处吸收为O^2-→Ti^4+的转移吸收。掺Ti氧化铝透明陶瓷样品Ti^3+离子的发射谱线与单晶的相吻合,同时Ti^3+在氧化铝陶瓷中分布很均匀,且Ti^3+浓度较

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本文采用提拉法成功地生长了钛掺杂浓度为0.1%原子分数的LiAlO2单晶体,借助光学显微镜,结合化学腐蚀法,对Ti:LiAlO2晶体(100)面空气退火前后的缺陷特征进行了研究,用AFM观测了(100)面晶片在不同温度下流动N2气氛退火过的表面形貌。结果表明:Ti:LiAlO2晶体(100)面的位错腐蚀坑是底面为平行四边形的锥形坑,位错密度约为5.0×104cm-2,900℃空气退火后晶片表面的位错腐蚀坑变大;N2退火能显著影响晶片的表面形貌,当退火温度为900℃时,晶片的均方根粗糙度(RMS)达到最低值

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There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

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We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

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采用溶胶-凝胶(Sol-Gel)法在已经预涂了一层过渡层的纯钛基体上制备生物玻璃(BG)涂层。试验以正硅酸乙酯(TEOS)、硝酸钙(Ca(NO3)2·4H2O)、氯化镁(MgCl2·6H2O)等为原料,并采用正交试验设计,所得涂层均通过SEM和EDS进行分析,并利用空间几何模型折算绝对偏差,从而确定出最优的试验参数为:[Si]=1M,水酯比(Rω)=4,pH=4.5,浸涂粘度(η)为3.55mPa·s。

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A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

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