(R,R)-DPEN-modified Ru/gamma-Al2O3 - An efficient heterogeneous catalyst for enantioselective hydrogenation of acetophenone

An efficient enantioselective catalyst of 5 wt.% Ru/-gamma-Al2O3 modified with R,R-1,2-diphenylethylene-diamine ((R,R)-DPEN) for the hydrogenation of a non-activated aromatic ketone of acetophenone has been investigated, a relatively high enantiomeric excess (ee) of 60.5% was obtained at both the conversion and selectivity larger than 99%, it was about three times higher than the ee values reported up to now for acetophenone hydrogenation with the supported transition metal catalysts modified by chiral reagents. The influences of some reaction parameters such as phosphine ligand, substrate/catalyst/modifier molar ratios, base, solvent, pressure and reaction temperature have been discussed. The chiral modifier of (R,R)-DPEN was very important in controlling the enantioselectivity through adsorption competing with other substrates on the surface of active metal species. The phosphine ligand and base were also important and indispensable in the present reaction.

Surface-modified Nafion (R) membrane by casting proton-conducting polyelectrolyte complexes for direct methanol fuel cells

Surface-modified Nafion (R) membrane was prepared by casting proton-conducting polyelectrolyte complexes on the surface of Nafion (R). The casting layer is homogeneous and its thickness is about 900 nm. The proton conductivity of modified Nafion (R) is slightly lower than that of plain Nafion (R); however, its methanol permeability is 41% lower than that of plain Nafion (R). The single cells with modified Nafion (R) exhibit higher open circuit voltage (OCV = 0.73 V) and maximal power density (P-max = 58 mW cm(-2)) than the single cells with plain Nafion (R) (OCV = 0.67 V, P x = 49 mW cm-2). It is a simple, efficient, cost-effective approach to modifying Nafion (R) by casting proton-conducting materials on the surface of Nafion (R).

Effects R3+ on the photoluminescent properties of Ca2R8(SiO4)(6)O-2 : A (R = Y, La, Gd; A= Eu3+, Tb3+) phosphor films prepared by the sol-gel process

Using CaCO3, metal oxides (all dissolved by nitric acid) and tetraethoxysilane Si(OC2H5)(4) (TEOS) as the main starting materials, Ca2R8(SiO4)(6)O-2:A (R = Y, La, Gd; A = EU3+, Tb3+) phosphor films have been dip-coated on quartz glass substrates through the sol-gel process. X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the 1000 degreesC annealed films are isomorphous and crystallize with the silicate oxyapatite structure. AFM and SEM studies revealed that the phosphor films consisted of homogeneous particles ranging from 30 to 90 nm, with an average thickness of 1.30 mum. The Eu3+ and Tb3+ show similar spectral properties independent of R 3, in the films due to their isomorphous crystal structures. However, both the emission intensity and lifetimes of Eu3+ and Tb3+ in Ca2R8(SiO4)(6)O-2 (R = Y, La, Gd) films decrease in the sequence of R = Gd > R = Y > R = La, which have been explained in accordance with the crystal structures.

Luminescence properties of RP1-xVxO4: A (R=Y, Gd, La; A=Sm3+Er3+ x=0, 0.5, 1) thin films prepared by pechini sol-gel process

Thin film phosphors with compositions of RP1-xVxO4: A (R = Y, Gd, La; A = Sm3+, Et3+; x = 0, 0.5, 1) have been prepared by a Pechini sol-gel process. X-Ray diffraction, atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized to characterize the thin film phosphors. The results of XRD showed that a solid solution formed in YVxP1-xO4: A film series from x = 0 to x = 1 with zircon structure, which also held for GdVO4: A film. However, LaVO4: A film crystallized with a different structure, monazite. AFM study revealed that the phosphor films consisted of homogeneous particles ranging from 90 to 400 nm depending on the compositions. Upon short ultraviolet excitation, the films exhibit the characteristic Sm(3+ 4)G(5/2)-H-6(J) (J=5/2, 7/2, 9/2) emission in the red region and Er3+ H-2(11/2), S-4(3/2)-I-4(15/2) emission in the green region, respectively With the increase of x values in YVxP1-xO4: SM3+ (Er3+) films, the emission intensity Of SM3+ (Er3+) increases due to the increase of energy transfer probability from VO43- to Sm3+ (Er3+). Due to the structural effects, the Sm3+ (Er3+) shows similar spectral properties in YVO4 and GdVO4 films, which are much different from those in LaVO4 film.

BaMgAl_(10)O_(17)∶R~(2+)(R=Eu,Mn)的真空紫外光谱特性

采用高温固相反应法合成了BaMgAl10 O17∶R(R =Eu ,Mn)荧光体 ,测量了荧光体的真空紫外激发光谱和相应的发射光谱 ,观察到基质吸收带位于 16 5nm附近 ,Mn2 + 离子的吸收位于 170～ 2 40nm范围 ,Eu2 + 离子的 4f→ 5d吸收位于 2 10～ 40 0nm范围。真空紫外光谱特性的研究表明基质与激活离子之间存在较好的能量传递。

LaMgAl_(11)O_(19)∶R(R=Tb,Mn)的真空紫外光谱特性

采用高温固相反应法合成了LaMgAl11O19∶R(R=Mn,Tb)荧光体,测量了荧光体的真空紫外激发光谱和相应的发射光谱,观察到基质吸收带位于170nm附近,Mn2+离子的吸收位于170～510nm范围,Tb3+离子的4f 5d吸收位于170～250nm范围。在147nm激发下,它们发射绿光。真空紫外光谱特性的研究表明,基质与激活离子之间存在较好的能量传递。

钙改性对r-Al2O3的高温热稳定性的影响

中国科学院山西煤炭化学研究所

La_(0.5)R_(0.5)Ba_2Cu_3O_7,Pr_(0.5)R_(0.5)Ba_2Cu_3O_7以及RBa_2Cu_3O_7(R=稀土)的键共价性计算

使用复杂晶体化学键理论计算了La0 .5R0 .5Ba2 Cu3O7(R =Pr,Nd ,Sm ,Eu ,Gd ,Dy ,Y ,Ho,Er,Tm ,Yb ,Lu) (La-R12 3) ,Pr0 .5R0 .5Ba2 Cu3O7(R =La ,Nd ,Sm ,Eu ,Gd ,Dy ,Ho ,Y ,Er,Tm ,Yb ,Lu) (Pr -R12 3)以及RBa2 Cu3O7(R =La ,Pr,Nd ,Sm ,Eu ,Gd ,Dy ,Ho ,Y ,Er,Tm) (R12 3)中Cu—O键的键共价性 ,结果表明Pr-R12 3,La-R12 3,以及R12 3都应具有超导性 ,而实验结果是La0 .5Pr0 .5Ba2 Cu3O7,R0 .5Pr0 .5Ba2 Cu3O7(R =La,Nd ,Sm ,Eu ,Gd)无超导性 .产生这种矛盾的原因尚不明确 ,需要做进一步的研究.

The photo-induced decarbonylation of Cp ' M(NO)(CO)(2) (M = Cr, Mo, W) with diorgano dichalcogenides (R2E2; E = S, Se; R = Me, Ph)

The photo-induced decarbonylation of Cp'Cr(NO)(CO)(2) (1a) in MeCN solution in the presence of R2E2 (E = S, Se; R = Me, Ph) leads to the formation of chalcogenolato-bridged binuclear complexes Cp-2'Cr-2(NO)(2)(mu -ER)(2) [E = S; R = Me (2a), Ph (3a); E = Se, R = Me (4a), Ph (5a)] while reactions between Cp'M(NO)(CO)(2) [M = Mo (1b), W (1c)] and Ph2E2 (E = S, Se) result in mononuclear complexes Cp'M(NO)(EPh)(2) [M = Mo; E = S (9b), Se (10b); M = W, E = S (11c), Se (12c)]. The corresponding reactions of (1b) with Me2E2 (E = S, Se) yielded both mono and binuclear complexes: Cp'Mo(NO)(SeMe)(2) (8b), Cp-2'Mo-2(NO)(2)(mu -EMe)(2) [E = S (6b), Se (7b)]. The new complexes have been characterized by i.r., H-1-, C-13-n.m.r. spectra and by electron-impact mass spectrometry.

Calculation of chemical bond parameters in RBa2Cu4O8(R = Dy,Ho,Er,Tm,Yb) and Y2Ba4Cu7O14.3

Chemical bond parameters in RBa2Cu4O8(R = Dy, Ho, Er, Tm, Yb) and Y2Ba4Cu7O14.3 were calculated by using complex chemical bond theory. The results indicated that the bond covalency in CuO chain was larger than that in CuO2 plane. For metal atoms, the bond covalency of five coordinated case was larger than that of six coordinated case.

Variable selection by orthogonal descriptors and prediction of R-f value of phenol and aniline derivatives

Orthogonal descriptors is a viable method for variable selection, but this method strongly depend on the orthogonalisation ordering of the descriptors. In this paper, we compared the different methods used for order the descriptors. It showed that better results could be achieved with the use of backward elimination ordering. We predicted R-f value of phenol and aniline derivatives by this method, and compared it with classical algorithms such as forward selection, backward elimination, and stepwise procedure. Some interesting hints were obtained.

RBa_2Cu_4O_8(R=Dy,Ho,Er,Tm,Yb)和Y_2Ba_4Cu_7O_(14.3)的化学键参数计算

使用复杂晶体上化学键理论计算了 RBa2 Cu4 O8(R=Dy,Ho,Er,Tm ,Yb)和 Y2 Ba4 Cu7O14 .3 的化学键参数 .结果表明 ,Cu O链上的 Cu O键共价性大于它们在 Cu O2 面的共价性 .当金属元素与氧形成五配位时 ,其共价性的数值大于这些元素在六配位时的情形

The influence of bond valence on bond covalency in RMn2O5 (R=La, Pr, Nd, Sm, Eu)

The relationship between bond valence and bond covalency in RMn2O5 (R = La, Pr, Nd, Sm, Eu) has been investigated by a semiempirical method. This method is the generalization of the dielectric description theory of Phillips, Van Vechten, Levine and Tanaka scheme. The results indicate that larger valences usually result in higher bond covalencies, in good agreement with the point that the excess charge in the bonding region is the origin of formation of bond covalency. Other factors, such as oxidation state of elements, only make a small contribution to bond covalency.