Preparation of SiC foams by CVI-R technique with SiCl4/H2/CH4 system

Autoria(s): Yang Y(杨禹); Guo QG(郭全贵); Shi JL(史景利); Liu L(刘朗)
Data(s)

2009
Identificador

http://ir.sxicc.ac.cn/handle/0/3940

http://www.irgrid.ac.cn/handle/1471x/150239
Idioma(s)

英语
Fonte

杨禹,郭全贵,史景利,刘朗.Preparation of SiC foams by CVI-R technique with SiCl4/H2/CH4 system.Materials Letters,2009,63(2):224-226
Tipo

期刊论文
Acesso ao item digital