Influence of dislocation stress field on distribution of quantum dots

InAs quantum dots (QDs) were grown on In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (0 0 1) substrates. Atomic force microscopy and transmission electron microscopy study have indicated that In0.15Ga0.85As ridges and InAs QDs formed at the inclined upside of interface misfit dislocations (MDs). By testifying the MDs are mixed 60 degrees dislocations and calculating the surface stress over them when they are 12-180 nm below the surface, we found the QDs prefer nucleating on the side with tensile stress of the MDs and this explained why the ordering of QDs is weak when the InGaAs layer is relatively thick. (c) 2006 Elsevier B.V. All rights reserved.

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

Size evolution and optical properties of self-assembled InAs quantum dots on different matrix

InAs quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. High density of 1.02 x 10(11) cm(-2) of InAs islands on In0.15Ga0.85As and In0.15Al0.85As underlying layer has been achieved. Atomic force microscopy and photoluminescence spectra show the size evolution of InAs islands on In0.15Ga0.85As underlying layer. A strong 1.3 mum photoluminescence from InAs islands on In0.15Ga0.85As underlying layer and with InGaAs strain-reduced layer has been obtained. Single-mirror light emitting diode structures with InAs quantum dots capped by InGaAs grown on InGaAs layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2003 Elsevier B.V. All rights reserved.

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.

Evolution of height distribution of Ge islands on Si(1 0 0)

Evolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved.

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski-Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)01010-4].

Electronic structures of InAs self-assembled quantum dots in an axial magnetic field

The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

Thermally induced evolution of phase transformations in gas hydrate sediment

Thermally induced evolution of phase transformations is a basic physical-chemical process in the dissociation of gas hydrate in sediment (GHS). Heat transfer leads to the weakening of the bed soil and the simultaneous establishment of a time varying stress field accompanied by seepage of fluids and deformation of the soil. As a consequence, ground failure could occur causing engineering damage or/and environmental disaster. This paper presents a simplified analysis of the thermal process by assuming that thermal conduction can be decoupled from the flow and deformation process. It is further assumed that phase transformations take place instantaneously. Analytical and numerical results are given for several examples of simplified geometry. Experiments using Tetra-hydro-furan hydrate sediments were carried out in our laboratory to check the theory. By comparison, the theoretical, numerical and experimental results on the evolution of dissociation fronts and temperature in the sediment are found to be in good agreement.

Properties and structure of N = Z nuclei within relativistic mean field theory

The axially deformed relativistic mean field theory with the force NLSH has been performed in the blocked BCS approximation to investigate the proper-ties and structure of N=Z nuclei from Z=20 to Z=48. Some ground state quantities such as binding energies, quadrupole deformations, one/two-nucleon separation energies, root-mean-squaxe (rms) radii of charge and neutron, and shell gaps have been calculated. The results suggest that large deformations can be found in medium-heavy nuclei with N=Z=38-42. The charge and neutron rms radii increase rapidly beyond the magic number N=Z=28 until Z=42 with increasing nucleon number, which is similar to isotope shift, yet beyond Z=42, they decrease dramatically as the structure changes greatly from Z=42 to Z=43. The evolution of shell gaps with proton number Z can be clearly observed. Besides the appearance of possible new shell closures, some conventional shell closures have been found to disappear in some region. In addition, we found that the Coulomb interaction is not strong enough to breakdown the shell structure of protons in the current region.

Polyol-Mediated Synthesis of PbS Crystals: Shape Evolution and Growth Mechanism

An interesting shape evolution of. PbS crystals, that is, from cubes to (truncated) octahedra and finally to stable star-shaped multipods with six arms along the < 100 > directions is first realized via a facile polyol-mediated reaction between lead acetate and sulfur powder in the absence of surfactants. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Fourier transform infrared (FT-IR) techniques were employed to characterize the samples. We elucidate the important parameters (including reaction temperature and sulfur sources) responsible for the shape-controlled synthesis of PbS crystals.

STRUCTURAL EVOLUTION AND COMPOSITION CHANGE IN THE SURFACE REGION OF POLYPROPYLENE/CLAY NANOCOMPOSITES ANNEALED AT HIGH TEMPERATURES

A model experiment was done to clear the formation mechanism of protective layers during combustion of polypropylene (PP)/organically modified montmorillonite (OMMT) nanocomposites. The investigation was focused on the effects of annealing temperature on the structural changes and protective layer formation. The decomposition of OMMT and degradation of PP/OMMT nanocomposites were characterized by means of thermogravimetric analysis (TGA). The structural evolution and composition change in the surface region of PP/OMMT nanocomposites during heating were monitored by means of X-ray photoelectron spectroscopy (XPS), ATR-FTIR and field emission scanning electron microscopy (FESEM).

Defect evolution and hydrodynamic effects in lamellar ordering process of two-dimensional quenched block copolymers

The effects of hydrodynamic interactions on the lamellar ordering process for two-dimensional quenched block copolymers in the presence of extended defects and the topological defect evolutions in lamellar ordering process are numerically investigated by means of a model based on lattice Boltzmann method and self-consistent field theory. By observing the evolution of the average size of domains, it is found that the domain growth is faster with stronger hydrodynamic effects. The morphological patterns formed also appear different. To study the defect evolution, a defect density is defined and is used to explore the defect evolutions in lamellar ordering process. Our simulation results show that the hydrodynamics effects can reduce the density of defects. With our model, the relations between the Flory-Huggins interaction parameter chi, the length of the polymer chains N, and the defect evolutions are studied.

Structural evolution of tensile deformed high-density polyethylene at elevated temperatures: Scanning synchrotron small- and wide-angle X-ray scattering studies

The structural evolution of an ice-quenched high-density polyethylene (HDPE) subjected to uniaxial tensile deformation at elevated temperatures was examined as a function of the imposed strains by means of combined synchrotron small-angle X-ray scattering (SAXS) and wide-angle X-ray scattering (WAXS) techniques. The data show that when stretching an isotropic sample with the spherulitic structure, intralamellar slipping of crystalline blocks was activated at small deformations, followed by a stress-induced fragmentation and recrystallization process yielding lamellar crystallites with their normal parallel to the stretching direction. Stretching of an isothermally crystallized HDPE sample at 120 degrees C exhibited changes of the SAXS diagram with strain similar to that observed for quenched HDPE elongated at room temperature, implying that the thermal stability of the crystal blocks composing the lamellae is only dependent on the crystallization temperature.