101 resultados para Spectroscopy of atoms
Resumo:
We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.
Resumo:
在中性原子的磁囚禁实验中,磁阱线圈的电流噪声会激发磁阱中的原子运动,势必对原子团的温度和寿命产生不可忽视的影响。对于非简谐阱,这种激发具有能量选择特性,它又取决于电流噪声的频谱分布。选择了实验中常用的四极阱为研究对象,用直接模拟蒙特卡罗方法来模拟四极阱中原子运动的参变激发现象,得到了原子温度与原子数损失随激发频率的变化关系,并进一步计算了两个共振峰处原子温度随调制时间和调制深度的变化曲线。此外,还研究了弹性碰撞速率对参变激发过程中原子温度上升的影响。这些结果对四极阱参变激发的实验有较好的参考价值。
Resumo:
建立了一套用于玻色.爱因斯坦凝聚实验的铷原子双磁光阱装置.从低速强源中获得慢原子柬,向超高真空磁光阱进行原子转移.低速强源磁光阱与超高真空磁光阱之间可维持3个量级的压强差,超高真空磁光阱的真空度最高可达1×10^-9Pa.慢原子束的束流通量达1×10^9/s.约4×10^8个^17Rb原子被装载到超高真空磁光阱中.还讨论了两种典型情况下磁光阱中装载的最大原子数.
Resumo:
研究了5种新型的具有不同结构的aα-异噁唑偶氮基-β-二酮类衍生物的红外光谱和紫外光谱,讨论了它们的酮式-烯醇式以及偶氮式.腙式之间的互变异构化现象。结果表明,所有化合物无论以固体形式或在溶液中均以腙式二酮体和偶氮式烯醇体的混合形式存在。各化合物的紫外吸收谱均呈双峰状,峰值分别处于246~262nm和326~339nm之间,其中,高波长吸收峰的强度明显高于低波长吸收峰强度,说明了各化合物中偶氮式烯醇体形式均多于腙式二酮体形式,其原因是由于各化合物中偶氮式烯醇体的异构体较多,且易以分子内氢键形式形成六元环,
Resumo:
We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.
Resumo:
A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.
Resumo:
We report on high-frequency (300-700 GHz) ferromagnetic resonance (HF-FMR) measurements on cobalt superparamagnetic particles with strong uniaxial effective anisotropy. We derive the dynamical susceptibility of the system on the basis of an independent-grain model by using a rectangular approach. Numerical simulations give typical line shapes depending on the anisotropy, the gyromagnetic ratio, and the damping constant. HF-FMR experiments have been performed on two systems of ultrafine cobalt particles of different sizes with a mean number of atoms per particles of 150 +/- 20 and 310 +/- 20. In both systems, the magnetic anisotropy is found to be enhanced compared to the bulk value, and increases as the particle size decreases, in accordance with previous determinations from magnetization measurements. Although no size effect has been observed on the gyromagnetic ratio, the transverse relaxation time is two orders of magnitude smaller than the bulk value indicating strong damping effects, possibly originating from surface spin disorders.
Resumo:
A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.
Resumo:
In this article, we review our recent advances in understanding the deformation behavior of a typical tough Zr41.2Ti13.8Cu12.5Ni10Be22.5 (Vit 1) bulk metallic glass (BMG), as a model material, under various loading modes and strain rates, focusing particularly on the rate-dependence and formation mechanism of shear-banding. Dynamic and quasi-static mechanical experiments, including plate shear, shear punch and spherical indentation, and continuum as well as atomistic modeling on shear-banding are discussed. The results demonstrate that higher strain rate slows down the annihilation process of free volume, but promotes the free-volume coalescence, which is responsible for the rate-dependent shear banding. The physical origin of shear bands, that is the free volume softening underpinned by irreversible rearrangements of atoms, is unveiled. Finally, some concluding remarks are given.
Resumo:
本文利用Nd:YAG纳秒激光器与配有CCD探测器的四通道光纤光谱仪建立了一套可用于植物样品激光诱导击穿光谱(LIBS)测量的实验装置。基于该实验装置,论文着重开展了激光参数、探测角度、延迟时间等对LIBS 光谱影响以及植物样品LIBS光谱定性、定量分析两方面的实验研究工作。通过实验研究发现:1、在某一激光能量点处,LIBS有最大的相对光谱强度;2、红外(IR)激光击穿阈值要高于紫外(UV)激光,并且IR激光产生的LIBS光谱中连续谱强度也强于UV激光;3、粒子谱线信噪比随时间演化的方式与其产生机制有密切关系;4、光纤与样品表面法线方向夹角越小越容易获得信噪比大的光谱。对所获得的植物样品LIBS光谱分析得到以下结论:1、在230~1080nm范围内,从苹果表皮样品的LIBS中观测到了380余条谱线,鉴别分析出二十多种元素和分子;2、对经过真空冻干处理的三种水果和两种蔬菜样品中的K、Ca、Fe、Na、Mg、Al六种微量元素相对含量分别进行了比较。实验结果表明LIBS技术是分析比较植物样品中微量元素含量的一种有效方法
Resumo:
Intermolecular ferromagnetic interactions in two stacking models for the dimer of high spin molecules are investigated by means of AM1-CI approach. It is shown that the stability of high spin ground state versus low spin state can be simply traced back to the number and the extent of atoms with reversed signs of pi-spin density in neighboring molecules coupled to each other in shortest distance.