采用紫外光提高双掺杂铌酸锂晶体中全息记录的灵敏度和光栅强度

提出了一种在双掺杂铌酸锂晶体中用调制的双紫外光进行非挥发全息记录的方法。与通常的用紫外光敏化的非挥发全息记录相比，这种方法可以大幅度地提高光栅强度和记录灵敏度。联立双中心物质方程和双光束耦合波方程，数值分析了光栅强度和衍射效率随时间的变化并讨论了掺杂浓度和记录光强对紫外光非挥发全息记录机制下光折变效应的影响。研究发现，紫外光记录得到的深浅中心的光栅具有相同的相位，总的光栅（深浅中心光栅的叠加）强度为两光栅强度之和，固定过程中深中心的光栅得到增强；增大深浅中心掺杂的浓度可以提高光栅强度，增大记录紫外光的光强

XPM-induced pulse compression in birefringent dispersion decreasing fiber

The pulse compression induced by cross-phase modulation in birefringent dispersion decreasing fiber is discussed theoretically by solving the coupled Schrodinger equations which include the contribution of the high-order non-linear effects, and third-order dispersion. In particular, it is found that a high quality compressed signal pulse can be obtained by a pump pulse of low intense through the technique. The dependence of optimum compression on the non-linear factor N, time delay tau(d) and the dispersive ratio f is also discussed in detail. (c) 2005 Elsevier B.V. All rights reserved.

Vectorial solution of Kukhtarev equations for doubly doped crystals and optimal choice of recording directions in nonvolatile holographic storage

Vectorial Kukhtarev equations modified for the nonvolatile holographic recording in doubly doped crystals are analyzed, in which the bulk photovoltaic effect and the external electrical field are both considered. On the basis of small modulation approximation, both the analytic solution to the space-charge field with time in the recording phase and in the readout phase are deduced. The analytic solutions can be easily simplified to adapt the one-center model, and they have the same analytic expressions given those when the grating vector is along the optical axis. Based on the vectorial analyses of the band transport model an optimal recording direction is given to maximize the refractive index change in doubly doped LiNbO3:Fe: Mn crystals. (c) 2007 Optical Society of America.

掺镱双包层光纤放大器高功率脉冲放大特性

从放大器速率方程出发，分析了掺镱双包层光纤放大器的放大特性。模拟计算了无信号输入时放大器上能级粒子数、泵浦功率和放大自发辐射（ASE）在放大器中的稳态分布。分析了前向和后向泵浦时，高功率高斯脉冲放大时的脉冲波形畸变、上能级粒子数的时间特性、放大器存储能量和脉冲能量演化等动态特性。讨论了掺镱双包层光纤放大器输出脉冲能量随不同输入脉冲峰值功率和泵浦功率的关系。该模型和结论对高功率脉冲放大器的设计和优化具有一定的理论指导意义。

Thermal and thermal-optical effects in high-power photonic crystal fiber lasers

A series-parallel model is introduced to calculate the effective thermal conductivities of hollow claddings of photonic crystal fibers ( PCFs ). The temperature distribution and thermal-optical properties of PCF lasers are studied by solving the heat transfer equations. The average power scaling of the PCF lasers in respect of the thermal effects is also discussed. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Thermal and thermal-optical effects in high-power photonic crystal fiber lasers

A series-parallel model is introduced to calculate the effective thermal conductivities of hollow claddings of photonic crystal fibers ( PCFs ). The temperature distribution and thermal-optical properties of PCF lasers are studied by solving the heat transfer equations. The average power scaling of the PCF lasers in respect of the thermal effects is also discussed. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Comparison of Yb-doped fiber laser with one-end and double-end pumping configuration

A high-power Ytterbium-doped fiber laser (YDFL) with homemade double clad fiber (DCF) is introduced in this paper. The output power characteristics of a linear cavity fiber laser have been studied theoretically by solving the rate equations and experimentally tested with single- and double-end-pumping configurations. When both ends of the fiber are pumped by two high-power laser diodes with a launched power of similar to 300 W each, a maximum CW output of 444 W is obtained with a slope efficiency of similar to 75%. (c) 2006 Elsevier Ltd. All rights reserved.

Choice of calibration equations in calibrating microwave test fixtures

The error theory of linear equation system has been applied to the calibration procedure of microwave network analyser in this article. A new explanation for the choice of the linear calibration equations is proposed and a general principle for choosing calibration equations is presented. The method can also be used to predict the occurrence of the problem of frequency limitation at some periodic frequencies. This principle is employed to the thru-short-delay (TSD) method and the solution using the chosen equations gives the most accurate results. A good agreement between the theory and the experiment has been obtained.

The influence of Schottky contact metals on the strain of AlGaN barrier layers

Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared. Using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared Schottky contacts, the polarization charge densities of the AlGaN barrier layer for the Schottky contacts were analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the polarization charge density of the AlGaN barrier layer for the Ir Schottky contact on strained Al0.25Ga0.75N/GaN heterostructures is different from that of the Ni Schottky contact, and the polarization charge densities of the AlGaN barrier layer for Ni Schottky contacts with different areas on strained Al0.3Ga0.7N/GaN heterostructures are different corresponding to different Ni Schottky contact areas. As a result, the conclusion can be made that Schottky contact metals on strained AlGaN/GaN heterostructures have an influence on the strain of the AlGaN barrier layer. (C) 2008 American Institute of Physics.

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of an AlxGa1-xN/GaN heterostructure is calculated. The accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the Schrodinger and Poisson equations self-consistently. Based on the model of treating dislocation as a charged line, a simple scattering potential, a square-well potential, is utilized. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. It is also found that the dislocation scattering dominates both the low- and moderate-temperature mobilities and accounts for the nearly flattening-out behavior with increasing temperature. To clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation.