Structural and optical properties of YAG : Ce3+ phosphors by sol-gel combustion method

High-quality Ce3+-doped Y3Al5O12 (YAG:Ce3+) phosphors were synthesized by a facile sol-gel combustion method. In this sol-gel combustion process, citric acid acts as a fuel for combustion, traps the constituent cations and reduces the diffusion length of the precursors. The XRD and FT-IR results show that YAG phase can form through sintering at 900 degrees C for 2 h. This temperature is much lower than that required to synthesize YAG phase via the solid-state reaction method. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed in the sintering process. The average grain size of the phosphors sintered at 900-1100 degrees C is about 40 nm. With the increasing of sintering temperature, the emission intensity increases due to the improved crystalline and homogeneous distribution of Ce3+ ions. A blue shift has been observed in the Ce3+ emission spectrum of YAG:Ce3+ phosphors with increasing sintering temperatures from 900 to 1200 degrees C. It can be explained that the decrease of lattice constant affects the crystal field around Ce3+ ions. The emission intensity of 0.06Ce-doped YAG phosphors is much higher than that of the 0.04Ce and 0.02Ce ones. The red-shift at higher Ce3+ concentrations may be Ce-Ce interactions or variations in the unit cell parameters between YAG:Ce3+ and YAG. It can be concluded that the sol-gel combustion synthesis method provides a good distribution of Ce3+ activators at the molecular level in YAG matrix. (c) 2005 Elsevier B.V. All rights reserved.

Sol-gel combustion synthesis and luminescence Of Y4Al2O9 : Eu3+ nanocrystal

Y4Al2O9:EU3+ phosphor was synthesized through a sol-gel combustion method. The Y4Al2O9 phase can form through sintering at 800 degrees C. This temperature is much lower than that required via the solid state reaction method. The average grain size of the phosphor was about 30 run. Compared with the amorphous phosphor, the charge transfer band of crystalline phosphor shows a blue shift. The emission Of Y4Al2O9:Eu3+ indicates the existence of two luminescent centers, in agreement with the crystal structure of Y4Al2O9. Higher doping concentration could be realized in Y4Al2O9 nanocrystal host lattice. This indicates that the sol-gel combustion synthesis method can increase emission intensity and quenching concentration due to a good distribution of EU3+ activators in Y4Al2O9 host. (c) 2005 Elsevier B.V. All rights reserved.

Synthesis of CaCu3Ti4O12 ceramic via a sol-gel method

The novel nano-ultrafine powders for the preparation of CaCu3Ti4O12 ceramic were prepared by the sol-gel method and citrate auto-ignition method. The obtained precursor powders were pressed, sintered at 1000 degrees C to fabricate microcrystal CaCu3Ti4O12 ceramic. The microcrystalline phase of CaCu3Ti4O12 was confirmed by X-ray powder diffraction (XRD). The morphology and size of the grains of the powders and ceramics under different heat treatments were observed using scanning electron microscopy (SEM). The relative dielectric constant of the ceramic sintered at 1000 degrees C was measured with a magnitude of more than 10(4) at room temperature, which was approaching to those of Pb-containing complex perovskite ceramics, and the loss tangent was less than 0.20 in a broad frequency region. The relative dielectric constant and loss tangent were also compared with that of CaCu3Ti4O12 ceramic prepared by other reported methods. (c) 2006 Elsevier B.V. All rights reserved.

Sol-Gel法制备生物玻璃／Ti涂层参数的确定

采用溶胶-凝胶（Sol-Gel）法在已经预涂了一层过渡层的纯钛基体上制备生物玻璃（BG）涂层。试验以正硅酸乙酯（TEOS）、硝酸钙（Ca（NO3）2·4H2O）、氯化镁（MgCl2·6H2O）等为原料，并采用正交试验设计，所得涂层均通过SEM和EDS进行分析，并利用空间几何模型折算绝对偏差，从而确定出最优的试验参数为：[Si]=1M，水酯比（Rω）=4，pH=4．5，浸涂粘度（η）为3．55mPa·s。

Comparison of TiO2 and ZrO2 films deposited by electron-beam evaporation and by sol-gel process

TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel Elms have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the Elm, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.

Headspace solid-phase microextraction with novel sol-gel permethylated-beta-cyclodextrin/hydroxyl-termination silicone oil fiber for determination of polybrominated diphenyl ethers by gas chromatography-mass spectrometry in soil

A simple, sensitive, and accurate method for determination of polybrominated diphenyl ethers (PBDEs) in soil has been developed based on headspace solid-phase microextraction (HS-SPME) followed by gas chromatography-mass spectrometry (GC-MS). Permethylated-beta-cyclodextrin/hydroxyl-termination silicone oil (PM-beta-CD/OH-TSO) fiber was first prepared by sol-gel technology and employed in SPME procedure. By exploiting the superiorities of sot-gel coating technique and the advantages of the high hydrophobic doughnut-shaped cavity of PM-beta-CD, the novel fiber showed desirable operational stability and extraction ability. After optimization on extraction conditions like water addition, extraction temperature, extraction time, salts effect, and solvents addition, the method was validated in soil samples, achieving good linearity (r>0.999), precision (R.S.D. < 10%), accuracy (recovery>78%), and detection limits (S/N =3) raging from 13.0 to 78.3 pg/g. (c) 2007 Published by Elsevier B.V.

Sol-gel method for the preparation of solid-phase microextraction fibers

A novel sol-gel method is applied for the preparation of solid-phase microextraction (SPME) fibers. Scanning electron microscopy experiments suggested a porous structure for the poly(dimethylsiloxane) (PDMS) coating. SPME-GC analysis provided evidence that the sol-gel fibers have some advantages, such as high thermal stability, efficient extraction rates, high velocities of mass transfer, and spacious range of application.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Realization of MMI power splitter by UV-light imprinting technique using hybrid sol-gel SiO2 materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-in organic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550 nm, respectively. The tested results show more circular mode profiles clue to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss (0.088 dB/cm) and the 1 x 2 MMI power splitter exhibits uniform outputs, with a very low splitting loss of 0.029 dB at 1549 nm.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique

Polycrystalline nano-grain-boundary multi-doping ZnO-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of E-b = 3300 V/mm. The effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of Bi2O3 on E-b of the samples are systematically investigated. The results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. The present work also shows that five phases including solid-state sintering, rich Bi liquid phase formation and ZnO as well as other additive dissolution, ZnO grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. The hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. The sintering characteristic and the influence of Bi2O3 content on the threshold voltage are also discussed. (c) 2004 Elsevier B.V. All rights reserved.