Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane

We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Technique for enhancing generation power density of silicon photovoltaic devices

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the proposed system is a V-shaped structure with two polycrystalline solar cells. Compared to solar cells in a conventional approach, the V-shaped structure enhances external quantum efficiency and leads to an increase of 24% in power conversion efficiency.

mc-Si : H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an me-Si: H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V-oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V-oc of 549.8 mV, J(sc) of 32.19 mA center dot cm(-2) and the cell's area of 1 cm(2).

Hydrogenated amorphous silicon films with significantly improved stability

A new regime of plasma-enhanced chemical-vapor deposition (PECVD), referred to as "uninterrupted growth/annealing" method, has been proposed for preparation of high-quality hydrogenated amorphous silicon (a-Si:H) films. By using this regime, the deposition process no longer needs to be interrupted, as done in the chemical annealing or layer by layer deposition, while the growing surface is continuously subjected to an enhanced annealing treatment with atomic hydrogen created in the hydrogen-diluted reactant gas mixture at a relatively high plasma power. The intensity of the hydrogen plasma treatment is controlled at such a level that the deposition conditions of the resultant films approach the threshold for microcrystal formation. In addition, a low level of B-compensation is used to adjust the position of the Fermi level close to the midgap. Under these conditions, we find that the stability and optoelectronic properties of a-Si:H films have been significantly improved. (C) 2001 Elsevier Science B.V. All rights reserved.

Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/1-s 850 degrees C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate. (C) 2000 Elsevier Science B.V. All rights reserved.

Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

The cost estimate for a novel cheap solar cell

The estimate for the lowest cost of SODL (silicon on defect layer) solar cell is made according to the price standard of present market. The estimate shows that the PV (photovoltaics) energy costs can be reduced from today's 25-30 cents/(kW h) to 7-8 cents/(kW h) which is comparable with the present cost of electricity generated by traditional energy sources such as fossil and petroleum fuels. The PV energy costs could be reduced to a value lower than 7-8 cents(kW h) by developing SODL technology. The SODL solar cell manufacture featuring simple processes is suitable to large scale automated assembly lines with high yield of large area cells. Some new ideas are suggested, favoring the further reduction in the cost of commercial solar cells.

Cooperative downconversion in GdAl3(BO3)(4): RE3+,Yb3+ (RE=Pr, Tb, and Tm)

An efficient near-infrared (NIR) quantum cutting (QC) in GdAl3(BO3)(4):RE3+,Yb3+ (RE=Pr, Tb, and Tm) phosphors has been demonstrated, which involves the conversion of the visible photon into the NIR emission with an optimal quantum efficiency approaching 200%, by exploring the cooperative downconversion mechanism from RE3+ (RE=Pr, Tb, and Tm) excitons to the two activator ions, Yb3+. The development of NIR QC phosphors could open up a new approach in achieving high efficiency silicon-based solar cells by means of downconversion in the visible part of the solar spectrum to similar to 1000 nm photons with a twofold increase in the photon number. (c) 2007 American Institute of Physics.

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

Simulation of In0.65Ga0.35N single-junction solar cell

The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 x 10(17) cm(-3) carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.

Preparation and characterization of Si sheets by renewed SSP technique

Silicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (C) 2004 Elsevier B.V. All rights reserved.

Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires

The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.