Optical levitation measurements with intensity-modulated light beams

Illumination of an optically levitated particle with an intensity-modulated transverse beam induces a transverse vibration of a particle in an optical trap. Based on this, the trapping force of a trap can be measured. Using an intensity-modulated longitudinal levitating beam causes a particle to move vertically, allowing for the determination of some aerodynamic parameters of a particle in air. The principles and the experimental phenomena are described and the initial results are given. (C) 1997 Optical Society of America.

高阶群速度色散引起的高斯超短脉冲宽度的展宽和形变

基于动量守恒和光参变过程中的三波耦合波方程, 和负单轴非线性光学晶体CsLiB6O10的色散方程, 研究了在光参变效应中超短激光脉冲由于群速度色散引起的展宽和形变。数值模拟显示, 在超短脉冲波形为双曲正割形和无啁啾调制时, 高阶群速度色散引起的超短脉冲为50 fs时, 晶体长度为10 mm, 紫外光213 nm作为基波入射时的脉冲展宽是波长为532 nm绿光在同等条件下的1.6倍。脉冲展宽程度与入射波长和晶体长度有关, 波长越短和晶体长度越长则脉冲展宽和波形变化越严重,高阶色散引起的超短高斯脉冲展宽, 将

基于多台阶反射光栅的飞秒脉冲压缩装置

反射式光栅对是一种具有负色散性质的器件,可用于飞秒激光脉冲的压缩和展宽,具有无材料色散的优点。给出了一种基于多台阶反射光栅的脉冲压缩装置。该装置为倍密度光栅结构,由两个周期分别为40μm和20μm的四台阶反射式光栅组成。实验得到的衍射效率可以达到70%以上,输入脉冲经过两个光栅的衍射后会按原路返回,从而达到色散补偿的效果。利用此压缩装置,脉冲宽度为66.8 fs的输入脉冲压缩至接近傅里叶变换极限脉冲,即46.6 fs,由此证明只要多台阶光栅效率足够高,此装置就有可能成为不同于棱镜对进行飞秒脉冲腔内和腔外压缩的另一种途径。

参变过程中的群速延迟对晶体匹配长度的影响

基于能量守恒和三波耦合波方程, 建立了超短脉冲在参变过程中二次谐波产生时的I类和II类相位匹配条件、基波与谐波之间的群速延迟时间、以及群速失配对晶体长度限制的理论基础。以负单轴非线性光学晶体CsLiB6O10为例, 分析和数值计算了超短脉冲宽度为100 fs时, 谐波的群速匹配长度随基波波长变化的规律。研究结果表明在I类相位匹配条件下, 基波波长为642 nm时, 群速延迟最小, 相应的群速匹配晶体长度最长为19.1 mm;在II类相位匹配条件下, 基波波长为767 nm, 群速延迟最小, 群速匹配长度最

Experimental study of nonlinear switching characteristics of conventional 2×2 fused tapered couplers

The nonlinear switching characteristics of fused fiber directional couplers were studied experimentally. By using femtosecond laser pulses with pulse width of 100 fs and wavelength of about 1550 nm from a system of Ti:sapphire laser and optical parametric amplifier (OPA), the nonlinear switching properties of a null coupler and a 100% coupler were measured. The experimental results were coincident with the simulations based on nonlinear propagation equations in fiber by using super-mode theory. Nonlinear loss in fiber was also measured to get the injected power at the coupler. After deducting the nonlinear loss and input efficiency, the nonlinear switching critical peak powers for a 100% and a null fused couplers were calculated to be 9410 and 9440 W, respectively. The nonlinear loss parameter P_(N) in an expression of α_(NL)=αP/P_(N) was obtained to be P_(N)=0.23 W.

频率分辨光学开关法测量飞秒脉冲

阐述了频率分辨光学开关法测量飞秒脉冲的原理，详细分析了模式尺寸效应和非线性效应对飞秒脉冲测量的影响。构建了一台用于飞秒脉冲测量的二次谐波-频率分辨光学开关装置，利用该装置对谐振腔输出的飞秒脉冲及压缩后的脉冲进行了测量。得到了飞秒脉冲的时间宽度及光谱宽度、电场及其相位在时域和频域的详细信息。谐振腔直接输出脉冲的时间宽度为56 fs，光谱宽度为27 nm，时间带宽积为0.686，算法中的最小误差为0.001792。脉冲压缩后的测量结果为27 fs，光谱宽度为92 nm，时间带宽积为1.27，算法误差为0.00

基于反射式达曼光栅的频率分辨光学开关装置

采用反射式达曼光栅对飞秒激光进行分束,可以避免材料色散的影响。搭建了利用反射式1×2达曼光栅为基础的频率分辨光学开关(FROG)装置,并把测量结果与传统多发频率分辨光学开关装置的测量结果进行了对比。理论和实验结果表明,当输入脉冲宽度大于50 fs时,用达曼光栅作为分光器和使用分光镜分光的效果是一样的;当输入脉冲的宽度小于50 fs时,用达曼光栅作为分光器引入的展宽量明显小于分光镜引入的展宽量,尤其是当输入脉冲的宽度小于20 fs时用达曼光栅作为分光器的效果更为突出。

Miniature pulse compressor of deep-etched gratings

We propose a miniature pulse compressor that can be used to compensate the group velocity dispersion that is produced by a commercial femtosecond laser cavity. The compressor is composed of two identical highly efficient deep-etched transmissive gratings. Compared with prism pairs, highly efficient deep-etched transmissive grating pairs are lightweight and small. With an optimized groove depth and a duty cycle, 98% diffraction efficiency of the -1 transmissive order can be achieved at a wavelength of 800 nm under Littrow conditions. The deep-etched gratings are fabricated in fused silica by inductively coupled plasma etching. With a pair of the fabricated gratings, the input positively chirped 73.9 fs pulses are neatly compressed into the nearly Fourier transform-limited 43.2 fs pulses. The miniature deep-etched grating-based pulse compressor should be of interest for practical applications. (c) 2008 Optical Society of America

飞秒脉冲通过散射表面后的时域特性

从理论上和实验上对飞秒激光脉冲通过散射表面后的时域特性进行了研究分析。用频率分辨光学开关法对通过散射表面前后的飞秒脉冲进行了测量和对比。理论分析和实验结果表明, 由于散射表面对飞秒脉冲的散射导致飞秒脉冲的展宽和形状的畸变。输入脉冲在时间相关函数的半峰全宽为64 fs; 透射脉冲在时间相关函数半峰全宽的平均值为117 fs。对透射脉冲场的统计特性进行了讨论, 透射脉冲场实部和虚部的概率函数分布遵从高斯函数分布; 强度的概率分布遵从指数分布规律; 给出了入射飞秒脉冲强度的自相关函数分布和飞秒时域散斑场强度的互相关函数分布的实验结果, 并且对二者的时间相关函数进行了讨论。

有限尺寸光栅压缩器的优化设计

分析了超短超强激光系统中有限尺寸光栅压缩器设计的关键物理参数及约束条件,得到了压缩器优化的三项基本变量。给出了一种输出能量最大化的压缩器优化方法,进而确定了有限尺寸光栅压缩器的最大工作能力。针对传统的圆光束方案提出了改进的椭圆光束方案,增大了聚焦能量,减小了焦斑尺寸,提高了峰值聚焦功率密度。通过数值模拟对500 mm曝光口径介质膜光栅在圆光束和椭圆光束两种方案下的最大输出能力进行分析比较,指出单块光栅在椭圆光束方案下可以实现500 fs,500 J,1 PW的脉冲输出。

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.

Two- and three-photon absorption in a novel fluorene-based compound

A novel symmetrical charge transfer fluorene-based compound 2,7-bis (4-methoxystyryl)-9, 9-bis (2-ethylhexyl)-9H-fluorene (abbreviated as BMOSF) was synthesized and its nonlinear absorption was investigated using two different laser systems: a 140-fs, 800-nm Ti:sapphire laser operating at 1-kHz repetition rate and a 38-ps, 1064-nm Nd:YAG pulsed laser operating at 10-Hz repetition rate, respectively. Unique nonlinear absorption properties in this new compound were observed that rise from multiphoton absorption. The nonlinear absorption coefficients were measured to be 6.02

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge20As25Se55 films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 x 10(-12) and -2.4 x 10(-12) esu, respectively. Amorphous Ge20As25Se55 films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge20As25Se55 films makes it a promising material for application in advanced techniques especially in optical switching. (c) 2005 Elsevier B.V. All rights reserved.