Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells

GaAsSb/GaAs single quantum wells grown by molecular-beam epitaxy are studied by selectively excited photoluminescence measurements. We have simultaneously observed the photoluminescence (PL) from both type-I and type-II transitions in the samples. The two transitions exhibit different PL behavior under different excitation energies. As expected, the peak energy of the type-I emission remains constant in the entire excitation energy range we used, while the type-II transition shows a significant blueshift with increasing excitation energy. The observed blueshift can be well explained by an electron-hole charge separation model at interface. This result, along with the excitation-power-dependent PL and the measured longer carrier decay time, provides more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum well structures. (C) 2002 American Institute of Physics.

A partially incoherent rate theory of long-range charge transfer in deoxyribose nucleic acid

A quantum chemistry based Green's function formulation of long-range charge transfer in deoxyribose nucleic acid (DNA) double helix is proposed. The theory takes into account the effects of DNA's electronic structure and its incoherent interaction with aqueous surroundings. In the implementation, the electronic tight-binding parameters for unsolvated DNA molecules are determined at the HF/6-31G* level, while those for individual nucleobase-water couplings are at a semiempirical level by fitting with experimental redox potentials. Numerical results include that: (i) the oxidative charge initially at the donor guanine site does hop sequentially over all guanine sites; however, the revealed rates can be of a much weaker distance dependence than that described by the ordinary Ohm's law; (ii) the aqueous surroundings-induced partial incoherences in thymine/adenine bridge bases lead them to deviate substantially from the superexchange regime; (iii) the time scale of the partially incoherent hole transport through the thymine/adenine pi stack in DNA is about 5 ps. (C) 2002 American Institute of Physics.

Interplay between partial incoherence, partial inelasticity, resonance, and heterogeneity in long-range electron transfer and transport

A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques

A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.

Quantum computation with coupled quantum dots embedded in optical microcavities

Based on an idea that spatial separation of charge states can enhance quantum coherence, we propose a scheme for a quantum computation with the quantum bit (qubit) constructed from two coupled quantum dots. Quantum information is stored in the electron-hole pair state with the electron and hole located in different dots, which enables the qubit state to be very long-lived. Universal quantum gates involving any pair of qubits are realized by coupling the quantum dots through the cavity photon which is a hopeful candidate for the transfer of long-range information. The operation analysis is carried out by estimating the gate time versus the decoherence time.

Operation of the qubit based on photon-assisted tunneling in a coupled quantum-dot system and the influence of dephasing

We derive the generalized rate equation for the coupled quantum-dot (QD) system irradiated by a microwave field in the presence of a quantum point contact. It is shown that when a microwave field is tuned in resonance with the energy difference between the ground states of two QD's, the photon-assisted tunneling occurs and, as a result, the coupled QD system may be used as the single qubit. Furthermore, we show that the oscillating current through the detector decays drastically as the dephasing rate increases, indicating clearly the influence of the dephasing effect induced by the quantum point contact used as a detecting device.

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with the side length of about 5 mum, we find that single fundamental mode operation at about 1.55 mum can be obtained as the side length increases from 4.75 to 5.05 mum. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.

Scattering matrix approach to electronic dephasing in long-range electron transfer

Based on the Buttiker dephasing model, we propose an analytical scattering matrix approach to the long-range electron transfer phenomena. The present efficient scheme smoothly interpolates between the superexchange and the sequential hopping mechanisms. Various properties such as the drastic dephasing-assisted enhancement and turnover behaviors are demonstrated in good agreement with those obtained via the dynamical reduced density-matrix methods. These properties are further elucidated as results of the interplay among the dephasing strength, the tunneling parameter, and the bridge length of the electron transfer system. (C) 2001 American Institute of Physics.

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

We have investigated the optical transitions in Ga1-yInyNxAs1-x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Q(c), electron effective mass m(e)*, and band gap energy E-g were estimated. It was found that the Q(c) is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0-1)%. The m(e)* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the m(e)* and E-g of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states. (C) 2001 American Institute of Physics.

Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation

A back-incident Si-0.65 Ge-0.35/Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 mum is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO2-Si distributed Bragg reflector as a top mirror and the interface between the buried SiO2 and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/WI at 1.305 mum and the full width at half maximum of 14 nm.

Room temperature (34 degrees C) operation of strain-compensated quantum cascade lasers

A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)As quantum cascade laser is reported. Quasi-continuous wave operation of this device at 34 degrees C with an output power of 11.4mW persisted for more than 30 minutes without obvious degradation. A very low threshold current density of 1.2KA/cm(2) at this temperature was observed.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure InGaAsP-InP laser is first proposed and demonstrated. A characteristic temperature (T-0) of 50 K is achieved from an InA1As native oxide buried heterostructure (NOBH) InGaAsP-InP multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. The threshold current and slope efficiency of NOBH laser changes from 5.6 mA, 0.23 mW/mA to 28 mA, 0.11 mW/mA with the operating temperature changing from 20 degrees C to 100 degrees C. It is comparable to conventional p-n reverse biased junction BH laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser.

The research of range-gated laser night vision system on cars - art. no. 68351V

The characteristic of several night imaging and display technologies on cars are introduced. Compared with the current night vision technologies on cars, Range-gated technology can eliminate backscattered light and increase the SNR of system. The theory of range-gated image technology is described. The plan of range-gated system on cars is designed; the divergence angle of laser can be designed to change automatically, this allows overfilling of the camera field of view to effectively attenuate the laser when necessary. Safety range of the driver is calculated according to the theory analysis. Observation distance of the designed system is about 500m which is satisfied with the need of safety driver range.