Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes. The FLA Raman spectra are analyzed and modeled with respect to mode frequencies and the spectral envelope of mode intensities. The deduced average superlattice properties are consistent with results from atomic force microscopy. The simple Rytov model used for Si/Ge layer structures reproduces very well the frequencies of the FLA modes up to 150 cm(-1). The nonlinearity of phonon dispersion curves in bulk Si for large momenta, however, becomes important for modeling the higher frequencies of observed FLA modes up to 22nd order. The effective dot layer width and an activation energy for thermal intermixing of 2.1+/-0.2 eV are determined from the spectral envelopes of FLA mode intensities of as-grown and annealed Si/Ge dot multilayers. (C) 2004 American Institute of Physics.

Self-starting mode-locked femtosecond Ti : sapphire laser using saturable, Bragg reflector(SBR)

Stable self-starting mode-locking states in a compact Ti: sapphire laser incorporating a home-made SBR with low loss double quanturn-well and low temperature and surface state hybrid absorber are investigated experimentally. The three mode-locking states, i.e. the passive mode-locking with a saturable absorber, the solition mode-locking and the Kerr-lens mode-locking have been successfully demonstrated. In this laser, chirped mirrors are used for dispersion compensation, and the 18 fs pulses are produced from the Kerr-lens mode-locking at 4.5W pump power, and output power is 150mW.

Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer

Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron spin relaxation. (c) 2007 Elsevier Ltd. All rights reserved.

Spin relaxation dynamics in InAs monolayer and submonolayer

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer (ML) and submonolayer (SML), which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ML and I ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3 ML InAs decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ML sample did not vary much, changing only from 400 to 340 ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.

Frequency mixing and phase detection functionalities of three-terminal ballistic junctions

Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.

Nonlinear optical response of nc-Si-SiO2 films studied with femtosecond four-wave mixing technique

Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. the off-resonant third-order nonlinear susceptibility chi((3)) is observed to be 1.3 x 10(-10) esu at 800 nm. The relaxation time of the film is fast as short as 50 fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.

Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As

Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized holes, and the time scales of spin alignment and relaxation take place in tens and hundreds of picoseconds, respectively. The Larmor frequency and effective g factor obtained in the Voigt geometry show an unusual temperature dependence in the vicinity of the Curie temperature due to the exchange coupling between the photoexcited holes and magnetic ions. Such a spin coherent precession can be amplified or destructed by two sequential excitation pulses with circularly copolarized or oppositely polarized helicity, respectively. (c) 2006 American Institute of Physics.

Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film

The polyetherketone (PEK-c) guest-host system thin films in which the range of the weight percent of 3-(1,1-dicyanothenyl)-1-phenyl-4, 5- dihydro-1H-pryazole (DCNP) is from 20% to 50% were prepared. The predicted high value of electro-optical (EO) coefficient gamma(33) = 48.8 pm/V by using two-level model was obtained when the weight percent of DCNP in the polymer system is 40%, whereas EO coefficients are attenuated at higher chromophore loading then 40%. The temporal stability of the EO activity of the guest-host polymer was evaluated by probing the decay of the orientational order of the chromophores in the polymer system.

Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation

The real-time monitoring of the second-harmonic generation (SHG) was used to optimize the poling condition and to study the nonlinear optical (NLO) properties of the polyetherketone (PEK-c) guest-host polymer films. The high second-order NLO coefficient chi(33)((2)) = 11.02 pm/v measured at 1.064 mu m was achieved when the weight percent of DR1 guest in the polymer system is 20%. The NLO activity of the poled DR1/PEK-c polymer film can maintain more than 80% of its initial value when temperature is under 100 degrees C, and the normalized second-order NLO coefficient can maintain more than 85% after 2400 s at 80 degrees C. (C) 2000 Elsevier Science Ltd. All rights reserved.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Linear and nonlinear intersubband optical properties in a step quantum well with an applied electric field

Within the framework of the effective-mass envelope-function theory, the field-dependent intersubband optical properties of a Al0.4Ga0.6As/Al0.2Ga0.8As/GaAs step quantum well are investigated theoretically based on the periodic boundary condition. A very large Stark shift occurs when the lowest subband electron remains confined to the small well while the higher subband electron confined to the big well. The optical nonlinearity in a step well due to resonant intersubband transition (ISBT) is analyzed using a density-matrix approach. The second-harmonic generation coefficient chi(2 omega)((2)) and nonlinear optical rectification chi(0)((2)) have also been investigated theoretically. The results show that the ISBT in a step well can generate very large second order optical nonlinearities, chi(0)((2)) and chi(2 omega)((2)) can be tuned by the electric field over a wide range.

on quadratic bent functions in polynomial forms

In this correspondence, we construct some new quadratic bent functions in polynomial forms by using the theory of quadratic forms over finite fields. The results improve some previous work. Moreover, we solve a problem left by Yu and Gong in 2006.

Room-temperature dual-wavelength erbium-doped fibre laser based on a sampled fibre Bragg grating and a photonic Robin Hood

With the assistance of a kind of photonic Robin Hood that is originated from four-wave mixing in a dispersion-flattened high-nonlinearity photonic-crystal fibre, a novel dual-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated by using a sampled fibre Bragg grating. The experiments show that, due to the contribution of the photonic Robin Hood, the proposed fibre laser has the advantage of excellent uniformity, high stability and stable operation at room temperature. Our dual-wavelength EDF laser has the unique merit that the wavelength spacing remains unchanged when tuning the two wavelengths of laser, and this laser is simpler and more stable than the laser reported by Liu et al. [Opt. Express, 13 142 (2005)].

Z-scan theory based on a diffraction model

Based on Fresnel-Mrchhoff diffraction theory, a diffraction model of nonlinear optical media interacting with a Gaussian beam has been set up that can interpret the Z-scan phenomenon in a new way. This theory not only is consistent with the conventional Z-scan theory for a small nonlinear phase shift but also can be used for larger nonlinear phase shifts. Numerical computations indicate that the shape of the Z-scan curve is greatly affected by the value of the nonlinear phase shift. The symmetric dispersionlike Z-scan curve is valid only for small nonlinear p base shifts (\Deltaphi(0)\ < pi), but, with increasingly larger nonlinear phase shifts, the valley of the transmittance is severely suppressed and the peak is greatly enhanced. The power output through the aperture will oscillate with increasing nonlinear phase shift caused by the input laser power. The aperture transmittance will attenuate and saturate with increasing Kerr constant. (C) 2003 Optical Society of America.

Mode field diameter and nonlinear properties of air-core nanowires

Exact solutions of Maxwell's equations describing the lightwave through 3-layer-structured cylindrical waveguide are obtained and the mode field diameter and nonlinear coefficient of air-core nanowires (ACNWs) are numerically calculated. The simulation results show that ACNWs offer some unique optical properties, such as tight field confining ability and extremely high nonlinearity. At a certain wavelength and air core radius, we optimize the waveguide design to maximize the nonlinear coefficient and minimize the mode field diameter. Our results show that the ACNWs may be powerful potential tools for novel micro-photonic devices in the near future.