218 resultados para High-power devices


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Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm(2), respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers. (C) 2007 Elsevier B.V. All rights reserved.

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A new kind of Nd3+, -doped high silica glass (SiO2 > 96% (mass fraction)) was obtained by sintering porous glass impregnated with Nd3+, ions. The absorption and luminescence properties of high silica glass doped with different Nd3+, concentrations were studied. The intensity parameters Omega(t) (t = 2, 4, 6), spontaneous emission probability, fluorescence lifetime, radiative quantum efficiency, fluorescence branching ratio, and stimulated emission cross section were calculated using the Judd-Ofelt theory. The optimal Nd3+ concentration in high silica glass was 0.27% (mole fraction) because of its high quantum efficiency and emission intensity. By comparing the spectroscopic parameters with other Nd3+ doped oxide glasses and commercial silicate glasses, the Nd3+-doped high silica glasses are likely to be a promising material used for high power and high repetition rate lasers.

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Butt joint line-defect-waveguide microlasers are demonstrated on photonic crystal slabs with airholes in a triangular lattice. Such microlaser is designed to increase the output power from the waveguide edge directly. The output power is remarkably enhanced to 214 times higher by introducing chirped structure in the output waveguide. The lasing mode operates in the linear dispersion region of the output waveguide so that the absorption loss due to the band-edge effect is reduced. The laser resonance is illustrated theoretically using the finite difference time domain method. A practical high power efficiency of 20% is obtained in this microlaser. (C) 2008 American Institute of Physics.

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1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

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By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6degrees with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.

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A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

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A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

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The dependence of the inversion-layer thickness on the film thickness in thin-film SOI structure is analyzed theoretically by using computer simulation. A new concept and parameter, the critical thickness of thin film all-bulk inversion, is introduced for the design of thin-film MOS/SOI devices. It is necessary to select the film thickness T(s1) close to the all-bulk strong inversion critical thickness in order to get high-speed and high-power operation of ultra-thin film MOS/SOI devices.

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A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

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The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4 pi sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

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Binary melts of S-ethyltetrahydrothiophenium iodide and dicyanoamide (or tricyanomethide) have been employed for dye-sensitized solar cells with high power conversion efficiencies up to 6.9% under the illumination of AM 1.5G full sunlight. We have further shown that the transport of triiodide in ionic liquids with high iodide concentration is viscosity-dependent in terms of a physical diffusion coupled bond exchange mechanism apart from the simple physical diffusion.

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Low crystalline order has been proved to be one of the main hindrances for achieving high performance devices based on thin films composed of crystallizable polymer. In this work, we use a facile method to substantially improve crystallinity of poly(3-hexylthiophene) (P3HT) in its pure or composite film via the construction of ordered precursors in the solution used for thin film deposition. These improvements have been confirmed by bright-field transmission electron micrography, electron diffraction, UV-Vis absorption and wide-angle X-ray diffraction.

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We employed a binary spacer of orderly conjugated 3,4-ethyldioxythiophene and thienothiophene to construct a wide-spectral response organic chromophore for dye-sensitized solar cells, exhibiting a high power conversion efficiency of 9.8% measured under irradiation of 100 mW cm(-2) air mass 1.5 global (AM1.5G) sunlight and an excellent stability.

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New single-polymer electroluminescent systems containing two individual emission species - polyfluorenes as a blue host and 2,1,3-benzothiadiazole derivative units as an orange dopant on the main chain - have been designed and synthesized. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue(lambda(max) = 421 nm/445 nm) and orange emission (lambda(max) = 564 nm)from the corresponding emitting species. The influence of the photoluminescence (PL) efficiencies of both the blue and orange species on the electroluminescence (EL) efficiencies of white polymer light-emitting diodes (PLEDs) based on the single-polymer systems has been investigated. The introduction of the highly efficient 4,7-bis(4-(N-phenyl-N-(4-methylphenyl)amino)phenyl)-2,1,3-benzothiadiazole unit to the main chain of polyfluorene provides significant improvement in EL efficiency. For a single-layer device fabricated in air (indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid/polymer/Ca/Al), pure-white electroluminescence with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35,0.32), maximum brightness of 12 300 cd m(-2), luminance efficiency of 7.30 cd A(-1), and power efficiency of 3.34 lm W-1 can be obtained.

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A modified simplified rate equation (RE) model of flowing chemical oxygen-iodine laser (COIL), which is adapted to both the condition of homogeneous broadening and inhomogeneous broadening being of importance and the condition of inhomogeneous broadening being predominant, is presented for performance analyses of a COIL. By using the Voigt profile function and the gain-equal-loss approximation, a gain expression has been deduced from the rate equations of upper and lower level laser species. This gain expression is adapted to the conditions of very low gas pressure up to quite high pressure and can deal with the condition of lasing frequency being not equal to the central one of spectral profile. The expressions of output power and extraction efficiency in a flowing COIL can be obtained by solving the coupling equations of the deduced gain expression and the energy equation which expresses the complete transformation of the energy stored in singlet delta state oxygen into laser energy. By using these expressions, the RotoCOIL experiment is simulated, and obtained results agree well with experiment data. Effects of various adjustable parameters on the performances of COIL are also presented.