High-performance quantum-dot superluminescent diodes
| Data(s) |
2004
|
|---|---|
| Resumo |
By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6degrees with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang, ZY; Wang, ZG; Xu, B; Jin, P; Sun, ZZ; Liu, FQ .High-performance quantum-dot superluminescent diodes ,IEEE PHOTONICS TECHNOLOGY LETTERS,JAN 2004,16 (1):27-29 |
| Palavras-Chave | #半导体材料 #crystal growth |
| Tipo |
期刊论文 |
