Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential

A prominent effect of the interface potential (IP) [E. L. Ivchenko and A. Yu. Kaminski, Phys. Rev. B 54, 5852 (1996); O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996)], the optical anisotropy of the forbidden transitions in quantum wells has been observed by reflectance-difference spectroscopy. Predictions by the heavy-light-hole coupling IP models are qualitatively consistent with all the observed features of the forbidden and the allowed transitions. The fact that the predicted value of the relative, transition strength, which depends on neither the IP strength nor the electric field, disagrees with the observed one indicates that coupling involving X and/or L bands may also be important. [S0163-1829(99)04227-7].

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

Both Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods have been used to study GaN films grown on alpha-Al2O3 (0001) substrates by atmospheric pressure metal-organic chemical vapor deposition and low pressure metal-organic chemical vapor deposition. The results show that in the frequency range from 400 to 3500 cm(-1) the signal-to-noise ratio of the FTIR grazing incidence measurement is far higher than that of the FTIR transmission measurement. Some new vibrational structures appearing in the former measurement have been discussed. The features around 1460 and 1300 cm(-1) are tentatively assigned to scissoring and wagging local vibrational modes of CH2 in GaN, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)06509-3].

High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere

High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a H-2 or D-2 atmosphere. The highest-frequency ones are due to the overtones and combination modes of SiH fundamentals. Others are CH modes due to (C,H) complexes, but the simultaneous presence of NH modes due to (N,H) complexes cannot be excluded. The present results seem to show also the existence of centers including both SiH and CH or NH bonds. One sharp mode at 4349 cm-l is related to a weak SiH fundamental at 2210 cm(-1). The related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor C atom. [S0163-1829(99)00911-X].

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Design and Verification of the Programming Circuit in an Application-Specific FPGA

In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology.

Investigation of vertical radiation loss for whispering-gallery modes in 3-D microresonators by FDTD simulation

The vertical radiation loss of three-dimensional (3-D) microresonators is investigated by 3-D finite-difference time-domain (FDTD) simulation. The simulation shows that the vertical radiation causes an important loss in the microresonators with weak waveguiding, and result in decrease of the quality factors (Q-factors) of whispering-gallery (WG) modes. Through the simulation, we find that TM-like modes have much weaker vertical radiation loss than TE-like modes. High Q-factor TM-like modes are observed in the 3-D microresonators with weak vertical waveguiding, but the Q-factors of TE-like modes decrease greatly.

High-quality-factor EH modes in microcylinder resonators predicted by 3D FDTD simulation

The mode characteristis of a microcylinders with center layer thickness 0.2 mu m and radius 1 mu m are investigated by the three-dimensional (31)) finite-difference time-domain (FDTD) technique and the Pade approximation. The mode quality factor (Q-factor) of the EH71 mode obtained by 3D FDTD increase with the increase of the refractive index of the cladding layer n(2) as n(2) smaller than 3.17, and can be as large as 2.4 x 10(4) as the vertical refractive index distribution is 3.17/3.4/3.17, which is much larger than that of the HE71 mode with the same vertical refractive index distribution.

Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

A linkage map of common carp (Cyprinus carpio) based on AFLP and microsatellite markers

P>Common carp (Cyprinus carpio) is an important fish for aquaculture, but genomics of this species is still in its infancy. In this study, a linkage map of common carp based on Amplified Fragment Length Polymorphism (AFLP) and microsatellite (SSR) markers has been generated using gynogenetic haploids. Of 926 markers genotyped, 151 (149 AFLPs, two SSRs) were distorted and eliminated from the linkage analyses. A total of 699 AFLP and 20 microsatellite (SSR) markers were assigned to the map, which comprised 64 linkage groups and covered 5506.9 cM Kosambi, with an average interval distance of 7.66 cM Kosambi. The normality tests on interval map distances showed a non-normal marker distribution. Visual inspection of the map distance distribution histogram showed a cluster of interval map distances on the left side of the chart, which suggested the occurrence of AFLP marker clusters. On the other hand, the lack of an obvious cluster on the right side showed that there were a few big gaps which need more markers to bridge. The correlation analysis showed a highly significant relatedness between the length of linkage group and the number of markers, indicating that the AFLP markers in this map were randomly distributed among different linkage groups. This study is helpful for research into the common carp genome and for further studies of genetics and marker-assisted breeding in this species.

Effects of the “all-fish” GH (growth hormone) transgene expression on resistance to Ichthyophthirius multifiliis infections in common carp, Cyprinus carpio L.

A study was undertaken on the susceptibility of the F-4 generation of "all-fish" growth hormone transgenic carp, Cyprinus carpio L, against Ichthyophthirius multifiliis infections. When 1-year old, transgenic carp, with non-transgenic carp and non-manipulated carp (controls) were split into three batches, and experimental infections were performed throughout the 3-month period. All 72 fish were successfully infected. It was shown that there was a significant difference (P<0.01) on infection level between transgenics and non-transgenics, and transgenics and controls. It possibly resulted from transgenics that had stronger non-specific immune functions. In addition, fish surface area affected significantly infection level (P<0.001). Carp with larger surface area harboured more parasites for each type of fish, but transgenic with larger surface area than non-transgenics and controls (P<0.01), loaded fewer parasites than others. Besides, the time of infection also greatly influenced (P<0.001) infection level. Results showed that there was a significant decline in parasite infectivity through October to November (P<0.001). It was likely to suggest that there existed senescence resulted in failure of any I. multifiliis isolate maintenance. Significant difference in infectivity between isolate G from grass carp and isolate H from gold fish suggested that different parasite strains may exist. (C) 2009 Elsevier B.V. All rights reserved.