用于多普勒测风雷达的单频全固态激光器稳频

采用Pound-Drever-Hall技术，对用于多普勒测风雷达的种子注入激光器的主动激光器进行稳频，将其频率锁定在一个特殊设计的法珀腔上。该法珀腔总体采用零膨胀微晶玻璃材料制成，具有极高的温度稳定性。使用计算机采集鉴频信号并且进行处理。锁定后，1秒内激光器的相对频率漂移为±25kHz，一小时内的相对频率漂移为±55kHz，满足多普勒测风雷达的要求。

高重复频率、窄脉宽全固态光纤放大器种子源

高重复频率、窄脉宽的全固态激光器种子源级联光纤放大器是获得高功率脉冲激光输出的有效手段.短上能态寿命的Nd∶YVO4晶体在连续抽运、高重复频率Q开关工作时容易得到接近连续性能的平均输出功率.理论分析了声光(AO)调Q器件中影响输出能量和脉宽大小的主要因素,优化配置了腔型参数.利用激光二极管(LD)光纤耦合模块端面抽运Nd∶YVO4晶体,实现了声-光调Q重复频率100 kHz以上,脉宽20 ns以下,波长1064 nm的激光输出.在抽运功率5.7 W时,得到了脉宽15.3 ns,重复频率150 kHz的种子光输出,在级联单级光纤放大器后,得到了20 W的输出.

传导冷却的全固态zigzag板条激光器

报道了激光二极管泵浦的被动传导冷却的Q开关Nd:YAG zigzag 板条激光器，谐振腔采用平平腔和非稳腔。在20Hz运转时，得到脉宽均为10ns的150 mJ，光光效率19%的多模输出和100 mJ、13%光学效率的单模输出，并进行了相关的热效应测试，结果表明该激光器具有效率高、结构紧凑、光束质量好，在空间环境应用具有很好的发展潜力。

全固态激光技术在航天领域的应用

回顾了空间固体激光应用系统的发展，以激光雷达和激光测高仪为主．介绍了国外几种典型应用系统的性能、指标及其全固态激光发射器的关键技术。最后介绍了我国探月工程中激光测高仪的研制情况。

Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber

By employing a continuous-wave (CW) Ti:sapphire tunable laser as a pumping source and a Cr4+:YAG single crystal as the saturable absorber (SA), a passively Q-switched Nd:YAG ceramic laser has been demonstrated at room temperature. With an absorbed pumping power of 541 mW at 808 nm, an average output power of 61 mW at 1064 nm has been obtained with 3.5 mu J pulse energy, 15 ns pulse width and 18.18 kHz repetition rate, and the corresponding slope-efficiency is 15%. The relationships between the pulse width, repetition rate, average output power, pulse energy, and peak power on the absorbed pumping power for different initial transmission of the Cr4+:YAG SA are discussed separately. The Nd:YAG ceramic is one of the most promising laser materials for compact, efficient, all-solid-state pulsed lasers.

激光晶体的现状及发展趋势

在分析激光晶体的研究现状的基础上，指出其未来应用及主要发展趋势：面向先进制造技术、激光武器等应用的（1μm波段）高功率、大能量激光晶体；面向人眼安全、遥感、光通讯、医疗等应用的红外激光晶体；面向全色显示、光刻等应用的蓝绿紫和可见光激光晶体；LD泵浦超快激光增益和放大介质材料．

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM

We obtained continuous wave mode-locked Nd-GdVO4-KTP laser with a SESAM. This is the first report of CW mode-locked Nd GdVO4-KTP laser with a SESAM to our knowledge. 396mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is assumed to be 5.5 ps, this is the shortest green pulse of 532 nm with SESAM. (c) 2009 by Astro Ltd. Published exclusively by WLLEY-VCH Verlag GmbH & Co. KGaA

4-ps passively mode-locked Nd : Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (C) 2004 Optical Society of America.

Passive mode locking of a diode-end-pumped Nd : GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror. (C) 2003 Optical Society of America.

The nature of the interaction between polyaniline and 2,5-dimercapto-1,3,4-thiadiazole in electrochemical redox processes

The interaction between polyaniline (PAn) and 2,5-dimercapto-1,3,4-thiadiazole (DMcT) was investigated by means of cyclic voltammetry and UV-visible spectroscopy. The results show that the polymerization-depolymerization reaction of DMcT or its dilithium salt Li(2)DMcT is a kinetically quasi-reversible process. PAn exhibits very weak electrochemical activity in neutral propylene carbonate. After doping with protonic acid, such as hydrochloric acid or maleic acid etc., however, it shows an extensively enhanced electroactivity. For the complex system, PAn-DMcT or PAn-Li(2)DMcT, polyaniline has no catalytic activity for the electrochemical polymerization-depolymerization reaction of DMcT or DMcT(2-). Instead, the enhancement of the electrochemical redox activity of PAn-DMcT system compared with that of PAn, DMcT, Li(2)DMcT, and PAn-Li(2)DMcT comes from the protonic doping of PAn by DMcT.

The electrochemical reversibility of the polyaniline/organodisulfide composite cathode containing an organomonothiol

Organomonothiols were used to control the extent of 2,5-dimercapto-1,3,4-thiadiazole polymerization. When organomonothiols were incorporated into polyaniline/2,5-dimercapto-1,3, 4-thiadiazole composite cathode materials for lithium batteries, their electrochemical reversibility and charge-discharge capacities were improved significantly. (C) 1999 The Electrochemical Society. S0013-4651(99)01-078-2. All rights reserved.

A collinear light-emitting diode-induced fluorescence detector for capillary electrophoresis

A novel fluorescence detector based on collinear scheme using a brightness light-emitting diode emitting at 470 nm as excitation source is described. The detector is assembled by all-solid-state optical-electronic components and Coupled with capillary electrophoresis using on-column detection mode. Fluorescein isothiocyanate (FITC) and FITC-labeled amino acids and small molecule peptide as test analyte were used to evaluate the detector. The concentration limit of detection for FITC-labeled phenylalanine was 10 nM at a signal-to-noise ratio (S/N) of 3. The system exhibited good linear responses in the range of 1 x 10(-7) to 2 x 10(-5) M (R-2 = 0.999). (c) 2004 Elsevier B.V. All rights reserved.

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.