4-ps passively mode-locked Nd : Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror


Autoria(s): He, JL; Fan, YX; Du, J; Wang, YG; Liu, S; Wang, HT; Zhang, LH; Hang, Y
Data(s)

2004

Resumo

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (C) 2004 Optical Society of America.

Identificador

http://ir.semi.ac.cn/handle/172111/7892

http://www.irgrid.ac.cn/handle/1471x/63540

Idioma(s)

英语

Fonte

He, JL; Fan, YX; Du, J; Wang, YG; Liu, S; Wang, HT; Zhang, LH; Hang, Y .4-ps passively mode-locked Nd : Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror ,OPTICS LETTERS,DEC 1 2004,29 (23):2803-2805

Palavras-Chave #光电子学 #HIGH-AVERAGE-POWER
Tipo

期刊论文