氦离子注入形成980nm脊型波导激光器腔面非注入区的研究

报道了氦离子注入技术在提高980nm半导体激光器灾变性光学损伤（catastrophic optical damage，COD）阈值上的应用.p-GaAs材料经氦离子注入后可以获得的电阻率。在距离腔面25μm的区域内进行氦离子注入，由此形成腔面附近的电流非注入区。腔面附近非注入区减少了腔面载流子的注入，因此减少了非辐射复合的发生，提高了激光器的灾变性光学损伤阈值。应用氦离子注入形成腔面非注入区的管芯的平均最大功率达到440.5mW，没有发生COD现象。而应用常规工艺制作的管芯的平均COD阈值功率为407.5mW。同常规工艺相比，应用氦离子注入形成腔面非注入区技术使管芯的最大输出功率提高了8％。

Effects of non-abrupt interface on waveguide properties of sitle/Si MQW photodetector

于2010-11-23批量导入

InGaAs/GaAs和InGaAs/AlGaAs应变层量子阱中的子带驰豫过程

利用时间分辨光谱技术,在11～90K温度范围研究了不同阱宽的InGaAs/GaAs和InGaAs/AlGaAs应变层量子阱子带弛豫过程,讨论了这两种量子阱材料中不同散射机制的作用。

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

杂谷脑流域景观格局优化配置研究

景观格局优化理论、方法和技术的研究是景观生态学的一个热点问题，同时也是一个难点。本文以眠江上游典型研究区-杂谷脑流域为研究对象，利用遥感和GIS技术分析该流域从1974年到2000年景观格局的时空变化，并分析了对该流域生态安全存在威胁的主要因素；以空间模拟技术和线性规划为基础建模，从理论和方法上探讨景观格局优化配置问题，以期为该区域的农林复合景观系统的生态安全和可持续发展找出切实可行的格局优化模式；并提出生态敏感度概念，为景观管理优先级提供依据。本文的主要结论如下：（l）杂谷脑流域作为长江上游重要的森林资源输出地，从1974年到2000年景观变化得出，有林地面积减少13％；灌木林地面积增加37％；相应的水源涵养能力下降，土壤侵蚀量增加7.8％；（2）杂谷脑流域陡坡耕作严重，分布在20°-45°坡度上的耕地占耕地总面积的78．2％；干旱河谷分布范围扩大，面积从1974年的217.99km2增加到2000年的237．38kmZ对生态安全造成威胁；（3）产业结构以资源密集型产业和重污染工业为主，结构不合理，第一产业比例大，农民人均纯收入远低于同期全国平均水平，教育水平比较低，这些问题会对杂谷脑流域生态安全产生负向影响；（4）以减少土壤侵蚀为依据，通过空间建模和线性规划方法优化设计杂谷脑流域景观格局，优化结果显示土壤侵蚀量比2000年减少2.35*106吨／年，土壤保持能力与1974年相近，水源涵养能力增强；（5）景观管理对于区域安全必不可少，针对该流域现存问题，建议以提高科学技术水平，调整产业结构和资源利用方式，提高教育水平为突破口。