A zebrafish forebrain-specific zinc finger gene can induce ectopic dlx2 and dlx6 expression

Identifcation of the earliest forebrain-specific markers should facilitate the elucidation of molecular events underlying vertebrate forebrain determination and specification. Here we report the sequence and characterization of fez (forebrain embryonic zinc finger), a gene that is specifically expressed in the embryonic forebrain of zebrafish. Fez encodes a putative nuclear zinc finger protein that is highly conserved in Drosophila, zebrafish, Xenopus, mouse, and human. In zebrafish, the expression of fez becomes detectable at the anterior edge of the presumptive neuroectoderm by 70% epiboly. During the segmentation period, its expression is completely restricted to the rostral region of the prospective forebrain. At approximately 24 h postfertilization, fez expression is mostly confined to the telencephalon and the anterior-ventral region of the diencephalon. Although fez expression is present in one-eyed pinhead (oep) and cyclops (cyc) zebrfish mutants, the pattern is altered. Forced expression of fez induces ectopic expression of dlx2 and dlx6, two genes involved in brain development. Knockdown of fez function using a morpholino-based antisense oligo inhibited dlx2 expression in the ventral forebrain. Our studies indicate that fez is one of the earliest markers specific for the anterior neuroectoderm and it may play a role in forebrain development by regulating Dlx gene expression. (C) 2001 Academic Press.

Transgenes in F-4 pMThGH-transgenic common carp (Cyprinus carpio L.) are highly polymorphic

To gain information on the integration pattern of pMThGH-transgene, 50 transgenes were recovered from F-4 generation of pMThGH transgenic common carp (Cyprinus carpio L,) and 33 recovered genes were analyzed. The restriction maps of these recovered genes were constructed by digestion with five kinds of enzymes. These transgenes can be classified into 4 types according to their restriction maps. Only one type of transgenes maintains its original molecular form, whereas the other three types are very different from the original one and vary each other on both molecular weight and restriction maps. This implies that the sequences of most transgenes have been deleted and/or rearranged during integration and inheritance. The results of PCR amplification and Southern blot hybridization indicate that MThGH in Type I transgene keeps intact but most of its sequence has been deleted in other three types. All these results suggest that transgenes in F-4 generation of transgenic carp are highly polymorphic. Two DNA fragments concerning integration site of transgenes were cloned from recovered transgenes, and found to be homologous to the 5'UTR of beta -actin gene of common carp and mouse mRNA for receptor tyrosine kinase (RTK), respectively.

Effect of feeding strategy and carbohydrate source on carbohydrate utilization by white sturgeon (Acipenser transmontanus) and hybrid tilapia (Oreochromis niloticus X O-aureus)

Two 8-week growth trials were conducted to determine the effect of continuous (CF) versus 2 meals day(-1) (MF) feeding and 30% starch versus 30% glucose diets on the carbohydrate utilization of 9.0-g white sturgeon and 0.56-g hybrid tilapia. The two trials were conducted under similar conditions except that sturgeon were kept at 18.5 degrees C in a flow-through system and tilapia were kept at 26 degrees C in a recirculating system. Significantly (P less than or equal to 0.05) higher specific growth rate (SGR), feed efficiency (FE), protein efficiency ratio (PER), body lipid content and liver glucose-6-phosphate dehydrogenase (G6PDH) and 6-phosphogluconate dehydrogenase (6PGDH) activities were observed in the CF than MF sturgeon. Only SGR, FE and PER were higher in sturgeon fed the starch than the glucose diets. Only higher liver G6PDH and malic enzyme (ME) activities were observed in the CF than MF tilapia but higher SGR, FE, PER and liver G6PDH, 6PGDH and ME activities were observed in tilapia fed the starch diet than those fed the glucose diet. This suggested that carbohydrate utilization by sturgeon was more affected by feeding strategy whereas tilapia was more affected by carbohydrate source. Furthermore, white sturgeon can utilize carbohydrates better than hybrid tilapia regardless of feeding strategy and carbohydrate source.

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Size limit and spontaneous emission factor for equilateral triangle semiconductor microlasers

The size of equilateral triangle resonator (ETR) needed for confining the fundamental mode is investigated by the total reflection condition of mode light rays and the FDTD numerical simulation. The confinement of the TM modes can be explained by the total reflection of mode light rays, and the confinement of the TE modes requires a larger ETR than the TM modes, which may be caused by excess scattering or radiation loss for the TE modes. With the multilayer staircase approximation, it is found that the spontaneous emission factor of the ETR lasers has the same form as that of strip waveguide lasers.

Comparison of modal gain and material gain for strong guiding slab waveguides

The relations between the gain factor, defined as the ratio of modal gain to material gain, and the optical confinement factor are discussed for the TE and TM modes in slab waveguides. For the TE modes, the gain factor is larger than the optical confinement factor, due to the zigzag propagation of the modal light ray in the core layers. For the TM modes, the existence of a nonzero electric field in the propagation direction results in a more complicated relation of the gain factor and the confinement factor. For an air-Si-SiO2 strong slab waveguide, the numerical results show that the modal gain can be larger than the material gain and the higher-order transverse mode can have an even larger modal gain than the fundamental mode, The efficiency of waveguiding photodetectors can be improved by applying the modal gain or loss characteristics in strong waveguides.

Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/1-s 850 degrees C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate. (C) 2000 Elsevier Science B.V. All rights reserved.

The growth of SiC on Si substrates with C2H4 and Si2H6

SiC was grown on Si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of C2H4 and S2H6 at 1050 degrees C. SiC formed during removal of oxide could be removed at 1150 degrees C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2 x 1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of rapid thermal annealing on Ti-AlN interfaces

The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RES, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al2O3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication method of silicon nanostructures by anisotropic etching

A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases

Tin disulfide (SnS2) nanocrystalline/amorphous blended phases were synthesized by mild chemical reaction. Both X-ray diffraction and transmission electron microscopy measurements demonstrate that the as-synthesized particles presented very small size, with a diameter of only a few nanometers. The photoluminescence (PL) spectrum suggests efficient splitting of photo-generated excitons in poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) and SnS2 hybrid films. Organic/inorganic hybrid solar cells comprising MDMO-PPV and SnS2 were prepared, giving photovoltage, photocurrent, fill factor and efficiency values of 0.702 V, 0.549 mA/cm(2), 0.385 and 0.148%, respectively, which suggests that this phase-blended inorganic semiconductor can also serve as a promising solar energy material. (C) 2009 Elsevier Ltd. All rights reserved.

开放对等环境下的安全协作关键技术研究

本文以动态开放的对等协作应用环境为背景，围绕实现安全协作存在的公平性、真实性和策略实施一致性安全需求，针对其中的激励机制、声誉系统、索引系统和访问控制授权管理等关键安全机制进行了深入研究，取得了如下研究成果： 第一， 针对P2P文件共享应用环境，提出一种改进的结环交换激励机制，在降低整体开销的同时，通过改变额外开销的分配关系抑制由于激励机制本身漏洞引发的自私行为和恶意攻击。 第二， 分析共享文件应用中服务真实性对声誉和索引数据的真实性的依赖关系，提出刻画服务真实性安全需求的P2P-CW完整性策略模型，用于指导P2P声誉和索引系统中相关安全机制的设计与分析。 第三， 提出在声誉管理系统层次通过保证声誉数据与计算过程的完整性，提高P2P声誉真实性；利用可信计算和虚拟机技术，设计分布式的安全声誉管理系统——可信声誉管理服务架构TRMS，提供更为可信、准确和可用的声誉数值，并兼顾系统整体的低开销、高扩展和强健壮等需求。 第四， 针对分布式结构化索引系统中的索引数据真实性保护问题，提出“安全索引验证机制”的概念；并设计基于数字签名和Bloom Filter的索引验证机制Prosiv，有效遏制索引污染攻击的同时，最小化索引系统的额外开销。 第五， 分析无仲裁者互操作环境下的远程约束实施问题，提出“约束安全互操作”的概念；提出并改进基于冲突闭包的约束冲突检测算法，由只具备局部信息的成员域协作实现职责分离约束的全局一致实施。