Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Influence of strain on annealing effects of In(Ga)As quantum dots

Post-growth rapid thermal annealing has been performed with In(Ga)As quantum dots (QDs) at different strain statuses. It is confirmed that the strain-enhanced interdiffusion decreases the inhomogeneous size distribution. The preferential lateral interdiffusion of QDs during annealing was observed. we attribute it to the naturally anisotropic strain distribution in/around the dots and the saturation of strain difference between the base boundary and the top of the dots. There exist strain-enhanced mechanism and vacancy diffusion enhanced mechanism during the annealing. As to which one dominates the QD interdiffusion depends on the thickness of capping layer and the annealing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

涌泉根灌湿润体特征值变化规律研究

在米脂山地微灌枣树示范基地进行原状土涌泉根灌入渗试验,研究了不同流量、不同灌水历时条件下涌泉根灌湿润体特征值的变化规律。结果表明:湿润体的水平扩散半径、向上入渗距离、向下入渗深度随流量的增大而增大,且均与入渗时间有显著的幂函数关系;在相同流量情况下,向上入渗最快,水平扩散次之,向下入渗最慢;湿润体体积受灌水量和流量的影响;在不同流量条件下,湿润体体积与灌水量间,湿润体水平扩散半径、垂直扩散距离与灌水量间均存在极显著的幂函数关系;针对五年生枣树根系分布特征,确定了枣树适宜灌水时间和灌水量。

长武塬区不同土地利用条件下土壤水分深剖面分布特征比较

通过调查取样的方法对长武塬面不同土地利用条件下(作物地,果园,苜蓿地)土壤水分状况在0~600 cm范围深度内进行对比,结果显示:长武塬区小麦收获期,不同土地利用条件下土壤水分含量总体存在较大差异,其中春玉米地由于上年小麦收获后直到春玉米播种前土地休闲,土壤含水量显著高于其它土地利用方式。其它土地利用条件下土壤平均含水量相对较低,在0~300 cm的范围内含水量分布表现为果园>苜蓿地>小麦地。300 cm以下含水量表现为小麦地>果园>苜蓿地;同时,不同利用条件下土壤水分剖面低湿层的位置深度也不相同,小麦地土壤水分低湿层深度较果园地和多年苜蓿地浅,土壤水分剖面形态与分布特征受利用模式影响显著。

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.