Multibeam coupling in photorefractive SBN:Ce

Theoretical and experimental results are presented for simultaneous multibeam coupling in photorefractive SBN:Ce. Within a single crystal, multiple signals are amplified through a coupling process that employs a single pump. The coupling gain of each signal results from coupling both between the pump and the signal and between different signals. The amount of gain that each signal receives is dependent on the intensity of the incident signal; thus a competition for the gain exists among the various signals.

Effect of microcosmic optical parameters of dopants on the signal-to-noise ratio in doubly doped LiNbO3 crystals

We propose a united theory that describes the two-center recording system by taking scattering noise into account. The temporal evolution of the signal-to-noise ratio in doubly doped photorefractive crystals is described based on jointly solving material equations and coupled-wave equations with the fourth-order Runge-Kutta method. Roles of microcosmic optical parameters of dopants on the signal-to-noise ratio are discussed in detail. The theoretical results can confirm and predict experimental results. (c) 2005 Elsevier GmbH. All rights reserved.

Simple ABCD matrix method for evaluating optical coupling system of laser diode to single-mode fiber with a lensed-tip

In this paper, we present a simple technique to determine the coupling efficiency between a laser diode and a lensed-tip based on the ABCD transformation matrix method. We have compared our analysis technique to that of previous work and have found that the presented method is reliable in predicting the coupling efficiency of lensed-tip and has the advantage of simplicity of coupling efficiency calculation even by a pocket calculator. The results can be useful for designing coupling optics. (c) 2005 Elsevier GmbH. All rights reserved.

Influence of birefringence dispersion on distributed measurement of polarization coupling in birefringent fibers

A white light interferometer is developed to measure the distributed polarization coupling in high-birefringence polarization-maintaining fibers (PMFs). Usually the birefringence dispersion between two orthogonal eigenmodes of PMFs is neglected in such systems. Theoretical analysis and experimental results show that the birefringence dispersion becomes a nonnegligible factor in a long-fiber test. Significant broadening of interferograms and loss of longitudinal coherence are observed. The spatial resolution and measurement sensitivity of the system decrease correspondingly. Optimum spectrum width selection is presented for better spatial resolution and measurement range. c 2007 Society of Photo-Optical Instrumentation Engineers.

Prism coupling of ultrashort light pulses into waveguides

We discuss coupling of ultrashort light pulses into waveguides by use of a prism waveguide coupler configuration. Theoretical analysis indicates that an extra loss induced by the short coherence times of ultrashort pulses, which has a strong effect on the reflected light and the optimum coupling condition, appears in the waveguide. Numerical simulations show that the reflectance strongly depends on the coherence times of ultrashort pulses. A method for realizing optimum coupling by compensating for the extra loss is proposed as well in this paper. A preliminary experiment of employing ultrashort pulses with different coherence times was carried out, and good agreement between theory and experiment was obtained. (c) 2006 Optical Society of America.

Coupling efficiency of laser beam to multimode fiber

The coupling efficiency of laser beam to multimode fiber is given by geometrical optics, and the relation between the maximum coupling efficiency and the beam propagation factor M-2 is analyzed. An equivalent factor M-F(2) for the multimode fiber is introduced to characterize the fiber coupling capability. The coupling efficiency of laser beam to multimode fiber is calculated in respect of the ratio M-2/M-F(2) by the overlapping integral theory. The optimal coupling efficiency can be roughly estimated by the ratio of M-2 to M-F(2) but with a large error range. The deviation comes from the lacks of information on the detail of phase and intensity profile in the beam factor M-2. (C) 2007 Elsevier B.V. All rights reserved.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Gain and noise figure of a double-pass waveguide amplifier based on Er/Yb-doped phosphate glass

A waveguide amplifier is fabricated by Ag+-Na+ two-step ion exchange on Er/Yb-doped phosphate glass. The spectroscopic performance of glass and the properties of channel waveguide are characterized. A double-pass configuration is adopted to measure the gain and noise figure (NF) of the waveguide amplifier, and the comparison of gain and NF for the single and double-pass configuration of the waveguide amplifier is presented. The results show that the double-pass configuration can make the gain increase from 8.8dB (net gain 2.2dB/cm) of the single-pass one to 14.6 dB (net gain 3.65 dB/cm) for small input power at 1534 nm, and the NF are all lower than 5.5dB for both the configurations.

Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface., The optimum annealing temperature of sapphire substrates is given. (c) 2006 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Study on the hydrolytic property and thermal stability of LiAlO2 substrate

The hydrolytic property and thermal stability of LiAlO2 (LAO), important factors for its application, were examined by AFM and X-ray rocking curve. We found that H2O may be deleterious for LAO surface polishing when the root mean square (RMS) value is less than 1 nm. However, when the RMS value is more than 1 nm it may be useful for LAO polishing. (100)-plane LAO substrates are annealed in the range of 850-900 degrees C in flux N-2, Slick AlN layer probably is produced on the substrate surface. M-plane GaN layer has grown on the substrate by metal-organic chemical vapor deposition (MOCVD) method. Theses results show that LiAlO2 crystal is a promising substrate of fabricating high-efficiency LEDs by MOCVD. (c) 2006 Elsevier B.V. All rights reserved.

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.