Phase behavior in mixtures of a homopolymer and a block copolymer .4. SALS and SAXS studies

Phase behavior of blends of poly(vinyl methyl ether) (PVME) with four styrene-butadienestyrene (SBS) triblock copolymers, being of various molecular weights, architecture, and compositions, was investigated by small-angle light scattering. Small-angle X-ray scattering investigation was accomplished for one blend. Low critical solution temperature (LCST) and a unique phase behavior, resembling upper critical solution temperature (UCST), were observed. It was found that the architecture of the copolymer greatly influenced the phase behavior of the blends. Random phase approximation theory was used to calculate the spinodal phase transition curves of the ABA/C and BAB/C systems; LCST and resembling UCST phase behavior were observed as the parameters of the system changed. Qualitatively, the experimental and the theoretical results are consistent with each other. (C) 1996 John Wiley & Sons, Inc.

Miscibility and crystallization behaviour of poly(ether ether ketone)/polyimide blends

The miscibility and crystallization behaviour of the blends of poly(ether ether ketone) (PEEK) with two thermoplastic polyimides (PI), PEI-E and YS-30, prepared by solution blending were studied by the use of small-angle X-ray scattering (SAXS), differential scanning calorimetry (d.s.c.) and polarizing microscopy techniques. The results obtained show that PEEK/YS-30 is miscible, while PEEK/PEI-E is partially miscible only in the composition range with PEI-E content up to 20 wt%. The crystallization behaviour of PEEK in PEEK/PI blends depends on the crystallization condition of the blend sample as well as the chemical structure and the content of the PI added. Our SAXS results indicate that the segregation of PI molecular chains during crystallization of PEEK chains in the blends is interfibrillar for PEEK/PEI-E blends, but interlamellar for PEEK/YS-30 blends. The compatibility and the crystallization behaviour are discussed in terms of charge transfer interaction between PI and PI molecules and between PI and PEEK molecules.

Structural study on poly(ether ether ketone ketone)-poly(ether biphenyl ether ketone ketone) copolymers

Structures of poly(ether ether ketone ketone)-poly(ether biphenyl ether ketone ketone) copolymers were studied by using small angle X-ray scattering and the one-dimensional electron density correlation function method. The results revealed that structures of the aggregated state of the copolymers depend closely on the biphenyl content (n(b)). When n(b) = 0.35, invariant Q, long period L, average thickness of crystal lamellae (d) over bar, electron density difference eta(c) - eta(a) and degree of crystallinity W-c,W-x assume minimum values.

THE INFLUENCE OF GAMMA-RADIATION ON POLYAMIDE-1010 AGGREGATE STRUCTURES

The influence of gamma-radiation on polyamide 1010 aggregate structures and crystal damage were examined by using wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS) techniques. The results revealed that some structural parameters of the aggregated state, the density differences and the degree of crystallinity W-c,W-x, essentially decreased with increasing radiation dose, but the specific surface O-s increased. Crosslinking and scission of irradiated polyamide 1010 samples occurred mainly in amorphous and interphase regions, and crystal damage and amorphization induced by gamma-radiation spread from the interphase and extended into the crystal phase with increasing radiation dose. This result also indicated that the (010) reflection with the hydrogen bond was more susceptible to the action of radiation.

MISCIBILITY, MICROSTRUCTURE, AND DYNAMICS OF BLENDS CONTAINING BLOCK-COPOLYMER .2. MICROSTRUCTURE OF BLENDS OF HOMOPOLYSTYRENE WITH STYRENE-BUTADIENE BLOCK-COPOLYMERS

The microstructures of styrene-butadiene triblock (SBS) and styrene-butadiene four-arm star block (SB-4A) copolymers and their blends with homopolystyrene (PS) of different molecular weights, MPS, have been investigated by means of small-angle X-ray scatt

EFFECT OF IRRADIATION ON CRYSTALLINITY AND MECHANICAL-PROPERTIES OF ULTRAHIGH MOLECULAR-WEIGHT POLYETHYLENE

Ultrahigh molecular weight polyethylene (UHMWPE) has been irradiated (0-40 Mrad) with a Co-60 source at room temperature under vacuum. The crystallinity has been investigated by differential scanning calorimetry (DSC) and small-angle X-ray scattering (SAXS). The mechanical properties have been determined at room temperature. A significant increase of heat of fusion can be seen at low irradiation doses, which is attributed to crystallization, caused by chain scission during the process of irradiation. It is also observed that the thickness of the lamellae changes with irradiation dose. The Young's modulus has been improved significantly after irradiation at low doses. (C) 1993 John Wiley & Sons, Inc.

STRUCTURE OF MESOMORPHIC FORM OF ISOTACTIC POLYPROPYLENE

The structure of quenched isotactic polypropylene (iPP) films, including samples etched with fuming nitric acid (FNA), has been studied by infrared (IR) spectra, wide-angle x-ray diffraction (WAXD), small-angle x-ray scattering (SAXS), and differential scanning calorimetry (DSC) measurements. The changes of IR, SAXS, DSC, and WAXD results induced by annealing for etched samples have been compared with those for unetched ones. The IR absorbance spectrum of the quenched iPP etched by FNA did not change. In addition, the SAXS intensity did not increase when these samples were annealed, indicating that the total (IR) crystallinity (i.e., the content of chain segments in the helical conformations) of the etched samples does not increase. However, WAXD patterns of the samples changed in a manner similar to those of the unetched one, from the original two blurred diffraction peaks to the sharp crystal patterns of alpha-form iPP, suggesting that the mesomorphic (or liquid crystal-like) phase has reorganized to alpha-form crystals. It is concluded that the change of WAXD of quenched iPP films during annealing results mainly from transformation of order in the mesomorphic phase, rather than only from an increase of crystal size. In other words, mesomorphic-form iPP is not constituted by any known crystals (such as alpha or beta crystals) in small sizes; its WAXD pattern reflects truly the degree of order in the mesomorphic phase.

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

Wafer bonding between p-Si and an n-InP-based InGaAsP multiple quantum well (MQW) wafer was achieved by a direct wafer bonding method. In order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees C, pair two at 250 degrees C, pair three at 350 degrees C, and pair four at 450 degrees C, respectively. The macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). These strains were measured by the X-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. Normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 Elsevier B.V. All rights reserved.

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates

In order to understand the growth feature of GaN on GaAs (0 0 1) substrates grown by metalorganic chemical vapor deposition (MOCVD), the crystallinity of GaN buffer layers with different thicknesses was investigated by using double crystal X-ray diffraction (DCXRD) measurements. The XRD results showed that the buffer layers consist of predominantly hexagonal GaN (h-GaN) and its content increases with buffer layer thickness. The nominal GaN (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. The integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. Possible explanations are presented. (C) 2003 Elsevier Science B.V. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices

Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 x 10(-17) cm(2) (.) s(-1) at 650 degreesC, 3.2 x 10(-17) cm(2 .) s(-1) at 750 degreesC, and 1.2 x 10(-14) cm(2 .) s(-1) at 850 degreesC.

Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

On the basis of integrated intensity of rocking curves, the multiplicity factor and the diffraction geometry factor for single crystal X-ray diffraction (XRD) analysis were proposed and a general formula for calculating the content of mixed phases was obtained. With a multifunction four-circle X-ray double-crystal diffractometer, pole figures of cubic (002), {111} and hexagonal {1010} and reciprocal space mapping were measured to investigate the distributive character of mixed phases and to obtain their multiplicity factors and diffraction geometry factors. The contents of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {1010} and {1011}.