140 resultados para maximum electron transport rate (ETRmax)


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为了阐明蕨类植物铁芒萁(Dicranopteris dichotoma Bernh.)体内稀土元素的分布及其光合特性,采用电感耦合等离子质谱分析了中国江西省龙南县轻、重稀土矿区和非矿区铁芒萁植物体内的稀土元素含量,并采用透射电子显微镜对其叶片细胞内的稀土元素进行精确定位。还比较系统的研究了自然条件下的铁芒萁与高浓度稀土元素处理条件下的非稀土元素富集植物黄瓜(Cucumis sativus Linn)的光合特性。结果表明: 1、0.5 mmol•L-1 LaCl3处理黄瓜后,可以诱导激发能向PS II分配。1和2 mmol•L-1 LaCl3处理黄瓜后,对黄瓜幼苗抑制作用表现在对其生长率,光合放氧活性和叶绿体完整率的抑制。这是由于LaCl3对黄瓜细胞结构和叶绿体膜结构的破坏所致。其表现为对类囊体膜结构的破坏,而导致PS II光合活性下降,并最终抑制黄瓜生长。 2、铁芒萁可以富集稀土元素,轻、重稀土矿区铁芒萁植物稀土元素的分布规律为叶片>根>土壤>茎>叶柄,非矿区铁芒萁植物稀土元素的分布规律为叶片>根>茎>叶柄。稀土元素在铁芒萁体内的运输和迁移过程中,发生了明显的分异作用,茎、叶柄、叶片中的重稀土相对贫乏,叶片中可以富集高浓度的轻稀土元素。 3、稀土元素可以进入完整的铁芒萁表皮细胞和叶肉细胞中,但多以沉淀的形式聚集在一起。非矿区铁芒萁叶绿体中的稀土元素含量约占其叶片中含量的5%。轻稀土矿区铁芒萁叶绿体中的稀土元素含量约占其叶片中含量的10%。部分稀土元素定位于富含PS II的基粒片层上。 4、铁芒萁富集稀土元素受环境和遗传特性的双重影响,但主要由其自身的生理、生化特性决定。其富集稀土元素的机制是隔离稀土元素在细胞壁、液泡中和分泌结合物质使稀土元素成为沉淀沉积下来,从而避免对光合活性的破坏。 5、与非矿区铁芒萁相比,轻稀土矿区植物叶绿体膜的全链电子传递速率增加了34.9%,PS II的电子传递活性增高了252.9%,PS I的电子传递活性增加了16.8%。轻稀土矿区铁芒萁全链电子传递活性的增加主要来自PS II电子传递活性的大幅提高,这可能与其调节激发能更多向PS II分配,提高PS II反应中心色素蛋白复合体(67.0%)和捕光色素蛋白复合体的含量相关。 6、与非矿区铁芒萁相比,重稀土矿区植物叶绿体膜的全链电子传递速率增加了46.3%,PS II的电子传递活性增高了23.8%,PS I的电子传递活性增加了60.4%。重稀土矿区铁芒萁电子传递活性的提高主要来自PS I电子传递活性的大量增加,这可能与其PS I反应中心蛋白复合体含量的提高(60.0%)有关。 铁芒萁富集并吸收稀土元素主要是由自身的理化特性决定的。它能够将稀土元素以沉淀的形式固定在细胞内部,并通过改变生理代谢来避免高浓度稀土元素对其光合作用的影响。可以在治理稀土元素污染的环保工程中用作植物修复材料。

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A novel multi-cell device made of organic glass was designed to study morphological and physiological characteristics of Microcystis population trapped in simulated sediment conditions. Changes of colonial morphology and antioxidant activities of the population were observed and measured over the range of 31-day incubation. During the incubation, the antioxidant enzyme activities fluctuated significantly in sediment environments. The activities of catalase (CAT), glutathione peroxidase (GPx) and malondialdehyde (NIDA) reached the highest on the 11(th) day, 6(th) day and 6(th) day. respectively, and then dropped down remarkably in the following days. The ratios of Fv/Fm and the maximal electron transfer rate (ETRm) declined during the initial days (1 similar to 11(th) day), but rebounded on the 16(th) day, which were consistent with the variations of total protein. In the end of incubation. gas vacuoles were hard]), observed and the gelatinous sheath was partly disappeared in the population of Microcystis. Nevertheless, the remaining populations. upon transferred to culture medium, were able to grow though experiencing a longer lag phase of nine days. The results indicated that the sediment environments were able to cause negative effects on M. aeruginosa cells. The cells, however, responded to against the possible damage afterwards. It is thus proposed the acute responses in the population during the early stage of sedimentation could be of importance in aiding the long-term survivor of Microcystis and recruitment in lake sediments. The present study also demonstrated the utility of the device in simulating the sediment environments for further investigation.

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Acoustic and concurrent behavioral data from one neonatal male Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis) in captivity were presented. The calf click train was first recorded at 22 days postnatal, and the frequency of hydrophone-exploration behavior with head scanning motions in conjunction with emissions of click trains by the calf increased gradually with age. The echolocation clicks in the first recorded click train were indistinguishable from those of adults. Calf echolocation trains were found to decrease in maximum click-repetition rate, duration, and number of clicks per train with age while the. minimum click-repetition rate remained more consistent. (c) 2007 Acoustical Society of America.

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Growth and energy budget were measured for three sizes(2.4, 11.1 and 22.5 g) of juvenile white sturgeon Acipenser transmontanus held at 18.5 degrees C and fed tubificid worms at different levels ranging from starvation to ad libitum. For each size-class, specific growth rate increased linearly with increasing ration, and conversion efficiency was highest at the maximum ration. Growth rate decreased with increasing fish size at the maximum ration, but increased with size al each restricted ration. Conversion efficiency increased with increasing ration for each size-class and was usually highest at the maximum ration. Faecal production accounted for 3.2-5.2% of food energy. The proportion of food energy lost in nitrogenous excretion decreased with increasing ration. With increases in ration, the allocation of metabolizable energy to metabolism decreased, while that to growth increased. Fish size had no significant effect on the allocation of metabolizable energy to metabolism or growth. Al the maximum ration, on average 64.9% of metabolizable energy was spent on metabolism, and 35.1% on growth. (C) 1996 The Fisheries Society of the British Isles

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A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

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Electron transport through two parallel quantum dots is a kind of solid-state realization of double path interference We demonstrate that the inter-clot Coulomb correlation and quantum coherence would result in strong current fluctuations with a divergent Fano factor at zero frequency. We also provide physical interpretation for this surprising result, which displays its generic feature and allows us to recover this phenomenon in more complicated systems. (C) 2009 Elsevier B.V. All rights reserved.

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The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

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Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.

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By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin-orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov-Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin-orbit interaction k(R)L variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device. (C) 2007 Elsevier B.V All rights reserved.

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The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch. (c) 2006 American Institute of Physics.

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Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

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The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

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Within the Buttiker dephasing model, the backscattering in the dephasing process is eliminated by setting a proper boundary condition. Explicit expression is carried out for the effective total tunneling probability in the presence of multiple pure dephasing scatterers with partial coherence. The derived formula is illustrated analytically by various limiting cases, and numerically for its application in tunneling through multibarrier systems.

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Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.

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A numerical analysis of an electron waveguide coupler based on two quantum wires coupled by a magnetically defined barrier is presented with the use of the scattering-matrix method. For different geometry parameters and magnetic fields, tunneling transmission spectrum is obtained as a function of the electron energy. Different from that of conventional electron waveguide couplers, the transmission spectrum of the magnetically coupled quantum wires does not have the symmetry with regard to those geometrically symmetrical ports, It was found that the magnetic field in the coupling region drastically enhances the coupling between the two quantum wires for one specific input port while it weakens the coupling for the other input port. The results can be well understood by the formation of the edge states in the magnetically defined barrier region. Thus, whether these edge states couple or decouple to the electronic propagation modes in the two quantum wires, strongly depend on the relative moving directions of electrons in the propagating mode in the input port and the edge states in the magnetic region. This leads to a big difference in transmission coefficients between two quantum wires when injecting electrons via different input ports. Two important coupler specifications, the directivity and uniformity, are calculated which show that the system we considered behaves as a good quantum directional coupler. (C) 1997 American Institute of Physics.