Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P

We introduce a double source electron beam evaporation (DSEBET) technique in this paper. The refractive index coatings were fabricated on K9 glass substrate by adjusting the evaporation rates of two independent sources. The coatings, which were described by atomic force microscopy (AFM), show good compactness and homogeneity. The antireflective (AR) coatings were fabricated on Superluminescent Diodes (SLD) by DSEBET. The hybrid AR coatings on the facets of SLD were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. The results of AFM and spectral performance of coated SLD show that DSEBET has a promising future in preparing the coatings on optoelectronic devices.

Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418]

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Organic/inorganic hybrid solar cells based on SnS/SnO nanocrystals and MDMO-PPV

SnS/SnO heterojunction structured nanocrystals with zigzag rod-like connected morphology were prepared by using a simple two-step method. Bulk heterojunction solar cells were fabricated using the SnS/SnO nanocrystals blended with poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene) (MDMO-PPV) as the active layer. Compared with solar cells using SnS nanoparticles hybridized with MDMO-PPV as the active layer, the SnS/SnO devices showed better performance, with a power conversion efficiency higher by about one order in magnitude.

一种基于QoS的服务构件组合方法

在面向服务的架构中,如何利用已有的服务构件组装成新的服务成为当前此领域的一个研究热点.该文以构件化嵌入式操作系统Liquid为背景,给出了一种基于QoS的服务构件组合方法,在满足组合服务的功能需求同时,满足其QoS需求.文章详细给出了所涉及的服务模型、QoS模型以及构件选择基本算法.为使此服务构件组合方法适应于动态变化的系统环境,该文进一步对构件选择基本算法进行优化,给出了构件选择的启发和协商算法.最后通过实验,比较和分析三种算法的性能.

一种开放混合实时系统的开放自适应调度算法

开放计算环境下的实时与非实时任务不确定并发,以及多种实时约束混合的复杂约束系统,即开放混合实时系统的需求越来越广泛.通过引入接收控制、调度服务器、自适应调节机制,提出一种开放环境下的自适应实时系统调度架构——OARtS(open adaptive real-time scheduling).它能适应开放计算环境的不确定性,有控制地接受实时任务运行;可根据系统空闲计算带宽变化,自适应地调节任务的实时等级,使得系统运行在最优的实时性能上;对于软实时任务,可根据其计算带宽需求变化,自适应地调节其计算带宽分配,以适应任务执行时间时变引起的实时不确定性.

基于QoS的Pareto最优的服务选择

随着越来越多的服务能够满足用户的功能需求,需要一种策略基于服务的多种QoS属性来帮助用户选择合适的服务。以XML描述服务的QoS属性,提出了一种基于QoS的Pareto最优的服务选择策略,选择出那些不在所有的QoS属性上劣于其它服务的服务。实验结果表明,与随机选择和偏好导向的选择策略相比,Pareto最优策略有独特的效果。

QuCOM:一种面向构件系统的QoS管理模型

在性能变化不确定的系统内,不同的应用处于竞争和共享有限的系统资源、并受其变化影响的环境中·在系统运行时,对于需要QoS保证的应用,为保证其QoS属性,应能适应于这种环境·考虑到系统资源的全局管理特性,仅从应用中增加适应机制是不够的,还需在系统层中增加QoS管理机制·为此,给出了一种面向构件系统的QoS管理模型———QuCOM(qualitycomponent)及其集成到系统构件框架的方法,使基于QuCOM开发的构件应用能够适应于变化的系统环境,并为了验证QuCOM的有效性,以一个视频流应用为例,给出了相关实验数据分析·