真空室内金属杂质污染对光学薄膜性能的影响

真空室内金属粒子污染是降低激光薄膜性能的一个重要因素。采用高真空残余气体分析仪,对薄膜沉积过程中的气氛进行分析。发现由黄铜制作的加热灯架在工作时会分解出Zn,在这种条件下沉积薄膜,会使薄膜中掺入金属杂质,导致薄膜激光破坏阈值降低。采用表面分析技术对薄膜的组分进行分析,证实薄膜中锌杂质的存在。激光破坏实验证明,含有锌杂质的薄膜的破坏阈值明显降低。

渐变反射率镜的设计与制备

按照高斯型渐变反射率镜(GRM)的参数要求,采用了中间层厚度渐变的方案对膜系和掩模板形状进行设计.根据薄膜的实际需求和具体的沉积设备,设计了掩模和掩模切换装置.在一次高真空环境下镀制了渐变反射率镜的所有膜系.采用直接测量的方法,测量了高斯型渐变反射率镜反射率的径向分布.测试结果表明,用这种技术制备的样品,与设计要求基本一致.分析得出,掩模板形状与精度对镀制结果有影响.随着设计尺寸减小,掩模板对膜料分子的散射作用增强,使样品中心反射率小于设计要求,边缘出现旁瓣.提出了减小基片与掩模板之间的距离和提高膜厚监控的精度的改善方案.

Techniques for fabrication of large-size graded reflectivity mirrors

According to the parameter requirements of a graded reflectivity mirror with a Gaussian profile, the layer structure and the mask pattern are designed using a graded-thickness middle layer. The mask and the automatic mask-switchover equipment are designed considering the actual requirement of the thin films and the specific deposit facility. The uniformity of the layer thickness is analyzed. The measurement results indicate that samples prepared with this technique are basically in accordance with the design parameter. The scattering effect between the material molecules and the mask, thickness errors, and the alignment error between the mask and the substrate are the main factors that influence the deposit result. (c) 2008 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3027595]

Homologous feeder cells support undifferentiated growth and pluripotency in monkey embryonic stem cells

In the present study, five homologous feeder cell lines were developed for the culture and maintenance of rhesus monkey embryonic stem cells (rESCs). Monkey ear skin fibroblasts (MESFs), monkey oviductal fibroblasts (MOFs), monkey follicular granulosa fibroblast-like (MFG) cells, monkey follicular granulosa epithelium-like (MFGE) cells, and clonally derived fibroblasts from MESF (CMESFs) were established and compared with the ability of mouse embryonic fibroblasts (MEFs) to support rESC growth. MESF, MOF, MFG, and CMESF cells, but not MFGE cells, were as good as or better than MEFs in supporting undifferentiated growth while maintaining the differentiation potential of the rESCs. In an effort to understand the unique properties of supportive feeder cells, expression levels for a number of candidate genes were examined. MOF, MESF, and MEF cells highly expressed leukemia inhibitory factor, ciliary neurotrophic factor, basic fibroblast growth factor, stem cell factor, transforming growth factor PI, bone morphogenetic protein 4, and WNT3A, whereas WNT2, WNT4, and WNT5A were downregulated, compared with MFGE cells. Additionally, all monkey feeder cell lines expressed Dkk1 and LRP6, antagonists of the WNT signaling pathway, but not WNT1, WNT8B, or Dkk2. rESCs grown on homologous feeders maintained normal karyotypes, displayed the characteristics of ESCs, including morphology, alkaline phosphatase, Oct4, the cell surface markers stage-specific embryonic antigen (SSEA)-3, SSEA-4, tumor-related antigen (TRA)-1-60, and TRA-1-81, and formed cystic embryoid bodies in vitro that included differentiated cells representing the three major germ layers. These results indicate that the four homologous feeder cell lines can be used to support the undifferentiated growth and maintenance of pluripotency in rESCs.

Comparative Analysis of Five Different Homologous Feeder Cell Lines in the Ability to Support Rhesus Embryonic Stem Cells

我们以前的研究建立了五株猕猴饲养层细胞系来支持猕猴胚胎干细胞(rESCs)的生长:一岁猴耳皮肤成纤维细胞(MESFs)、两岁猴输卵管成纤维细胞(MOFs)、成年猴卵泡颗粒成纤维样细胞(MFGs)、成年猴卵泡颗粒上皮样细胞(MFGEs),以及MESFs的克隆成纤维细胞(CMESFs).我们发现MESFs、CMESFs、MOFs和MFGs,而不足MFGEs支持猕猴胚胎干细胞(rESCs,rhesus embryonic stem cells)的生长.通过半定量PCR的方法,我们在支持性的饲养层细胞中检测到了一些基因的高表达.在本研究中,我们运用Affymetrix公司的GeneChip Rhesus Macaque Genome Array芯片来研究这五株同源饲养层的表达谱,希望发现哪些细胞因子和信号通路在维持rESCs中起到重要作用.结果表明,除MFGE外,包括GREM2、bFGF,、KITLG,、DKK3、GREM1、AREG、SERPINF1和LTBF1等八个基因的mRNA在支持性的饲养层细胞中高表达.本研究结果提示,很多信号通路在支持rESCs的未分化生长和多潜能性方面可能起到了冗余的作用.

Intergroup interactions in Tibetan macaques at Mt. Emei, China

Data on intergroup-interactions (I-I) were collected in 5 seasonally provisioned groups (A, B, D, D-1, and E) of Tibetan macaques (Macaca Thibetana) at Mt. Emei in three 70-day periods between 1991 April-June (P1), September-November (P2), December-1992 February (P3). The I-I were categorized as forewarning made by high-ranking males (including Branch Shaking and/or Loud Calls), long-distance interactions in space (specified by changes in their foraging movements), and close encounters (with Affinitive Behavior, Male's Herding Female, Sexual Interaction, Severe Conflict, Adult Male-male Conflict, Opportunistic Advance and Retreat, etc. performed by different age-sex classes). From periods Fl to P3, the I-I rate decreased with reduction in population density as a positive correlate of food clumpedness or the number of potential feeders along a pedestrian trail. On the other hand, from the birth season (BS, represented by P1 and P3) to the mating season (MS, represented by P2) the dominance relation between groups, which produced a winner and a loser in the encounters, became obscure; the proportion of close encounters in the I-I increased; the asymmetry (local groups over intruders) of forewarning signals disappeared; the rate of branch shaking decreased; and sometimes intergroup cohesion appeared. Considering that sexual interactions also occurred between the encountering groups, above changes in intergroup behaviors may be explained with a model of the way in which the competition for food (exclusion) and the sexual attractiveness between opposite sexes were in a dynamic equilibrium among the groups, with the former outweighing the latter in the BS, and conversely in the MS. Females made 93% of severe conflicts, which occurred in 18% of close encounters. Groups fissioned in the recent past shared the same home range, and showed the highest hostility to each other by females. In conspicuous contrast with females' great interest in intergroup food/range competition, adult male-male conflicts that were normally without body contact occurred in 66% bf close encounters; high-ranking male herding of females, which is typical in baboons, appeared in 83% of close encounters, and showed no changes with season and sexual weight-dimorphism; peripheral juvenile and subadult males were the main performers of the affinitive behaviors, opportunistic advance and retreat, and guarding at the border. In brief, all males appeared to "sit on the fence" at the border, likely holding out hope of gaining the favor of females both within and outside the group. Thus, females and males attempted to maximize reproductive values in different ways, just as expected by Darwin-Trivers' theory of sexual selection. In addition, group fission was observed in the largest and highest-ranking group for two times (both in the MS) when its size increased to a certain level, and the mother group kept their dominant position in size and rank among the groups that might encounter, suggesting that fission takes a way of discarding the "superfluous part" in order to balance the cost of competition for food and mates within a group, and the benefit of cooperation to access the resources for animals in the mother group. (C) 1997 Wiley-Liss, Inc.

Effects of feeding rate on growth performance of white sturgeon (Acipenser transmontanus) larvae

Four 1-week trials were conducted to determine the effects of feeding rates on growth performance and body proximate composition of white sturgeon larvae during each of the first 4 weeks after initiation of feeding. Feeding rates (% body weight day(-1)) were 10, 20, 30, 40, 50, and 60 for trial I; 5, 10, 15, 20, 25, and 30 for trial II; and 2.5, 5.0, 7.5, 10.5, 12.5, and 15.0 for trials III and TV Four tanks with 200 larvae each were randomly assigned to each of the six feeding rates. Average initial body weights of the larvae were 49, 94, 180, and 366 mg, respectively, for trials I-IV. The larvae were kept at 19-20 degreesC in circular tanks and fed continuously one of two commercial salmonid soft-moist feeds using automatic feeders. Proximate composition (%) of the feeds for trials I-III and IV were 13.9 and 14.9 moisture, 52.5 and 50.0 crude protein, 10.3 and 12.9 crude fat, and 8.1 and 8.7 ash, respectively. Except mortality in trial I, gain per food fed in trial III, and body ash in all trials, growth performance and body composition were significantly (P<0.05) affected by all feeding rates. Broken line analysis on specific growth rates indicated the optimum feeding rates of white sturgeon larvae to be 26%, 13%, 11%, and 6% body weight day-respectively, for weeks 1, 2, 3, and 4 after initiation of feeding. (C) 2003 Elsevier Science B.V. All rights reserved.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic Force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.

Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures

We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)04524-1].

Improvement of Ge self-organized quantum dots by use of Sb surfactant

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.