On The Interaction Of Channeling/Segmentation Cracks Of Coating: Study On The Critical Spacing

Channeling/segmentation cracks may arise in the coating subjected to in-plane tensile stress. The interaction between these multiple cracks, say the effect of the spacing between two adjacent cracks oil the behaviors of channels themselves and the interface around the interface corners, attracts wide interest. However, if the spacing is greater than a specific magniture,, namely the Critical Spacing (CS), there should be no interaction between such channeling/segmentation cracks. In this study, file mechanism of the effect of the crack spacing oil the interfacial stress around the interface corner will be Interpreted firstly. Then the existence of the CS will be verified and the relationship between the CS and the so-called stress transfer length Ill coating will be established for plane strain condition. Finally, the dependence of the stress transfer length, simultaneously of the CS, on the sensitive parameters will be investigated with finite element method and expressed with a simple empirical formula. (C) 2007 Elsevier Ltd. All rights reserved.

A second-order dynamic subgrid-scale stress model

A second-order dynamic model based on the general relation between the subgrid-scale stress and the velocity gradient tensors was proposed. A priori test of the second-order model was made using moderate resolution direct numerical simulation date at high Reynolds number ( Taylor microscale Reynolds number R-lambda = 102 similar to 216) for homogeneous, isotropic forced flow, decaying flow, and homogeneous rotating flow. Numerical testing shows that the second-order dynamic model significantly improves the correlation coefficient when compared to the first-order dynamic models.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

Centrifugal experimental study of suction bucket foundations under dynamic loading

Centrifugal experiments were carried out to investigate the responses of suction bucket foundations under horizontal and vertical dynamic loading. It is shown that when the loading amplitude is over a critical value, the sand at the upper part around the bucket is softened or even liquefied. The excess pore pressure decreases from the upper part to the lower part of the sand layer in the vertical direction and decreases radially from the bucket's side wall in the horizontal direction. Large settlements of the bucket and the sand layer around the bucket are induced by dynamic loading. The dynamic responses of the bucket with smaller height (the same diameter) are heavier.

Enhanced cycling performance and high energy density of LiFePO4 based lithium ion batteries

LiFePO4 attracts a lot of attention as cathode materials for the next generation of lithium ion batteries. However, LiFePO4 has a poor rate capability attributed to low electronic conductivity and low density. There is seldom data reported on lithium ion batteries with LiFePO4 as cathode and graphite as anode. According to our experimental results, the capacity fading on cycling is surprisingly negligible at 1664 cycles for the cell type 042040. It delivers a capacity of 1170 mAh for 18650 cell type at 4.5C discharge rate. It is confirmed that lithium ion batteries with LiFePO4 as cathode are suitable for electric vehicle application. (c) 2007 Elsevier B.V. All rights reserved.

简单金属在[100]单轴应力下的理论强度

本文讨论了利用赝势理论,按照Born稳定性判据,计算简单金属理论强度的方法。然后计算了六种简单金属(Li,Na,K,Rb,Cs和Pb)在0K和[100]单轴应力下的理论拉伸与压缩强度。

简单金属在流体静负载下的力学稳定性与理论拉伸强度

本文根据经典力学的稳定性条件,用膺势方法导出了立方晶体在流体静负载下的经典稳定性判据:B(P)>0,C′(P)>0和C(P)>0。然后计算了七种简单金属(Li,Na,K,Rb,Cs,Al和Pb)在零温和流体静负载下的稳定性范围与理论拉伸强度。

用赝势方法计算简单金属的弹性常数

本文利用单参数Heine-Abarenkov模型势及Hubbard-Sham介电函数计算了七种简单金属(Li,Na,K,Rb,Cs,Al和Pb)的二阶与三阶弹性常数,两个可调参数用零温零压下晶体的弹性常数C_(44)与晶格常数的实验值来确定,计算结果与实验值或其他作者的理论计算值符合得比较好,尤其是Al的三阶弹性常数,本文的计算结果比其他作者的计算结果更接近于实验值。

Studies on the phase behavior of lyotropic liquid crystal in DAD/C4OH/n-C8H18/D2O system

The lytropic liquid crystals in dodecanic acid diethanolamine (DAD)/n-butanol (C4OH)/octane (n-C8H18)/deuteron (D2O) system were studied to determine the phase regions and were investigated by H-2-NMR spectroscopy,optical polarizing microscope and small-angle X-ray diffraction (SAXD) methods. The results indicate that the lamellar, hexagonal and cubic liquid crystals all exist in the above system. Keeping the weight ratio of DAD and C4OH constant,the microphase structure, H-2 quadruple splitting and the interlayer spacing are all changed with the addition of deuteron.

Creep characterization of a fiber reinforced plastic material

Creep behavior of [±45°]_s composite material is characterized by using uniaxial creep and recovery tests. The well-known Schapery nonlinear viscoelastic consti tutive relation was modified to make it suitable for characterizing the creep behavior of this material. Then, using this modified Schapery constitutive equation, by which the vis coplastic and creep damage can be taken into consideration, the creep behavior of [±45°]. glass fiber reinforced epoxy laminate was studied. The constitutive parameters of the material were determined experimentally, and the procedure and method of determination of the material parameters are proved to be valid.

Optimization of tried wave-function in quantum monte-carlo method

A method for optimizing tried wave functions in quantum Monte Carlo method has been found and used to calculate the energies of molecules, such as H-2, Li-2, H-3+, H-3 and H-4. Good results were obtained.