Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

基于激光诱导击穿光谱技术的铝合金成分定量分析；Quantitative analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

利用Nd:YAG激光器输出的532nm激光束对位于空气中的标准变形铝合金样品进行烧蚀产生了激光诱导等离子体.对测量的230—440nm波长范围的光谱进行了谱线标定,同时基于自由定标方法对样品成分进行了定量分析,确定了样品中的元素含量.分析结果与标准值具有较好的一致性.

Quantitative analysis analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

Laser-induced breakdown plasma is produced by using Q-switched Nd: YAG laser operating at 532 nm, which interacts with the Al alloy sample target in air. The spectral lines in the 230-440 nm wavelength range have been identified, and based on the calibration-free method, the mass concentration of Al alloy are obtained, which is in good agreement with the standard value of the sample.