Single-Mode Solid-Core Tellurite Glass Fiber with Large Mode Area and Low Loss for Infrared Applications

低损耗实芯碲酸盐光纤的非线性研究

黄土区不同土地利用方式下径流量的神经网络模拟

基于黄土坡面降雨—径流关系的复杂性且非线性特性,引用3层前馈型BP网络模型,对不同土地利用方式(草灌地、刈割地、翻耕地)径流量进行模拟,以植被盖度、降雨强度、坡度、土壤前期含水率和土壤容重5个因子作为输入层变量,次降雨下径流量作为输出层变量,并利用野外人工模拟降雨试验所得到不同降雨强度下各类土地利用径流小区的径流量实测资料,对网络进行模拟训练和预测,取得了较好的结果,平均误差不超过10%。研究结果表明,与传统回归统计方法进行了误差比较,该模型的预测精度更高。

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

A double wavelength DFB laser with an identical active area for CWDM

A novel distribute feedback (DFB) laser which gave two different wavelengths under two distinct work conditions was fabricated. The laser consists of two Bragg gratings with different periods corresponding to wavelength spacing of 20 nm in an identical active area. When driving current was injected into one of the different sections separately, two different wavelengths at 1542.4 and 1562.5 nm were realized. The side mode suppression ratio (SMSR) of 45 dB or more both for the two Bragg wavelengths were achieved. The fabricating process of the laser was just the same as that of traditional DFB laser diode. This device can be potentially used in coarse wavelength division multiplexer (CWDM) as a promising light source and the technology idea can be used to enlarge the transmission capacity in metro area network (MAN).

Selective Area Growth InGaAsP by MOVPE

The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .