Variations and possible source of potentially available phosphorus in a Chinese shallow eutrophic lake

Surface, overlying, and interstitial waters were collected at monthly intervals at three experimental stations in a shallow Chinese eutrophic lake (Lake Donghu) to assess the occurrence, distribution, and status of UV-sensitive phosphorus compounds (UVSP) and phosphatase hydrolyzable phosphorus (PHP), coupled with kinetics of alkaline phosphatase activity (APA). Orthophosphate (o-P) concentrations were generally the highest at Station 1, where chlorophyll a (chl a) was a function of o-P at temporal scale. The V-max/K-m of APA obtained by Michaelis-Menten approach paralleled the chlorophyll data at two stations. These facts imply that the development of phytoplankton may be attributed to APA induced by PHP. The potentially available UVSP and PHP peaked in interstitial, overlying, and surface water simultaneously sometimes in 1995 to 1996 and 1997 to 1999. It is postulated that they may arise from the bottom. UVSP peaked in interstitial water at the 12-16 cm layers in sediment cores. Moreover, in interstitial water, UV irradiation resulted in an elevated o-P concentration and decreased APA in a timeseries analysis. Therefore, the mechanism that APA involved in the process of photorelease of o-P was not demonstrated. UVSP is most likely a functional group of labile phosphorus distinct from the enzymatic substrate in this shallow eutrophic lake.

Effect of feeding strategy and carbohydrate source on carbohydrate utilization by white sturgeon (Acipenser transmontanus) and hybrid tilapia (Oreochromis niloticus X O-aureus)

Two 8-week growth trials were conducted to determine the effect of continuous (CF) versus 2 meals day(-1) (MF) feeding and 30% starch versus 30% glucose diets on the carbohydrate utilization of 9.0-g white sturgeon and 0.56-g hybrid tilapia. The two trials were conducted under similar conditions except that sturgeon were kept at 18.5 degrees C in a flow-through system and tilapia were kept at 26 degrees C in a recirculating system. Significantly (P less than or equal to 0.05) higher specific growth rate (SGR), feed efficiency (FE), protein efficiency ratio (PER), body lipid content and liver glucose-6-phosphate dehydrogenase (G6PDH) and 6-phosphogluconate dehydrogenase (6PGDH) activities were observed in the CF than MF sturgeon. Only SGR, FE and PER were higher in sturgeon fed the starch than the glucose diets. Only higher liver G6PDH and malic enzyme (ME) activities were observed in the CF than MF tilapia but higher SGR, FE, PER and liver G6PDH, 6PGDH and ME activities were observed in tilapia fed the starch diet than those fed the glucose diet. This suggested that carbohydrate utilization by sturgeon was more affected by feeding strategy whereas tilapia was more affected by carbohydrate source. Furthermore, white sturgeon can utilize carbohydrates better than hybrid tilapia regardless of feeding strategy and carbohydrate source.

半导体吸收镜被动锁模激光器的准Z型腔结构光路

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Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm.

Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.

Solid source MBE growth of quantum cascade lasers

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

Enhancement of the spectral width of high-power 1.5 mu m integrated superluminescent light source by quantum well intermixing process

A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridge-waveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing, The spectral width was broadened from the 16 nm of the normal devices to 37 nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectral width of 37 nm.

10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE

A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s(-1) optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s(-1) non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructures have been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. Adopting an in situ doping control technology, the influence of background B dopant on the growth of n-Si emitter layer was reduced, and an abrupt B dopant distribution from SiGe base to Si emitter layer was obtained. Besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of Si emitter layer in this technology. (C) 2004 Elsevier B.V. All rights reserved.

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.

Numerical study of a high-resolution far-field scanning optical microscope via a surface plasmon-modulated light source

In this paper, we analyze light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of An and dielectric material. A subwavelength grating is scanned numerically by the finite difference time domain method in two dimensions. The results show that the transmission field can be confined to a spot with subwavelength width in the far field and can be useful in the application of a high-resolution far-field scanning optical microscope.

Plasmonic surface-wave splitter

The authors present an analysis of a plasmonic surface-wave splitter, simulated using a two-dimensional finite-difference time-domain technique. A single subwavelength slit is employed as a high-intensity nanoscale excitation source for plasmonic surface waves, resulting in a miniaturized light-surface plasmon coupler. With different surface structures located on the two sides of the slit, the device is able to confine and guide light waves of different wavelengths in opposite directions. Within the 15 mu m simulation region, it is found that the intensity of the guided light at the interface is roughly two to eight times the peak intensity of the incident light, and the propagation length can reach approximately 42 and 16 mu m and at the wavelengths of 0.63 and 1.33 mu m, respectively. (c) 2007 American Institute of Physics.

Bioactivity of Mg-ion-implanted zirconia and titanium

Titanium and zirconia are bioinert materials lacking bioactivity. In this work, surface modification of the two typical biomaterials is conducted by Mg-ion-implantation using a MEVVA ion source in an attempt to increase their bioactivity. Mg ions were implanted into zirconia and titanium with fluences ranging from 1 x 10(17) to 3 x 10(17) ions/cm(2) at 40 keV. The Mg-implanted samples, as well as control (unimplanted) samples, were immersed in SBF for 7 days and then removed to identify the presence of calcium and phosphate (Ca-P) coatings and to characterize their morphology and structure by SEM, XRD, and FT-IR. SEM observations confirm that globular aggregates are formed on the surfaces of the Mg-implanted zirconia and titanium while no precipitates are observed on the control samples. XRD and FT-IR analyses reveal that the deposits are carbonated hydroxyapatite (HAp). Our experimental results demonstrate that Mg-implantation improves the bioactivity of zirconia and titanium. Further, it is found that the degree of bioactivity is adjustable by the ion dose. Mechanisms are proposed to interpret the improvement of bioactivity as a result of Mg implantation and the difference in bioactivity between zirconia and titanium. (c) 2006 Elsevier B.V. All rights reserved.