Use of PFU protozoan community structural and functional characteristics in assessment of water quality in a large, highly polluted freshwater lake in China

Structural and functional parameters of protozoan communities colonizing on PFU (polyurethane foam unit) artificial substrate were assessed as indicators of water quality in the Chaohu Lake, a large, shallow and highly polluted freshwater lake in China. Protozoan communities were sampled 1, 3, 6, 9 and 14 days after exposure of PFU artificial substrate in the lake during October 2003. Four study stations with the different water quality gradient changes along the lake were distinguishable in terms of differences in the community's structural (species richness, individual abundance, etc.) and functional parameters (protozoan colonization rates on PFU). The concentrations of TP, TN, COD and BOD as the main chemical indicators of pollution at the four sampling sites were also obtained each year during 2002-2003 for comparison with biological parameters. The results showed that the species richness and PFU colonization rate decreased as pollution intensity increased and that the Margalef diversity index values calculated at four sampling sites also related to water quality. The three functional parameters based on the PFU colonization process, that is, S-eq, G and T-90%, were strongly related to the pollution status of the water. The number of protozoan species colonizing on PFU after exposure of 1 to 3 days was found to give a clear comparative indication of the water quality at the four sampling stations. The research provides further evidence that the protozoan community may be utilized effectively in the assessment of water quality and that the PFU method furnishes rapid, cost-effective and reliable information that may be useful for measuring responses to pollution stress in aquatic ecosystems.

Redescription of Difflugia tuberspinifera Hu, Shen, Gu et Gong, 1997 (Protozoa : Rhizopoda : Arcellinida : Difflugiidae) from China

The freshwater testate amoeba Difflugia tuberspinifera Hu et al. 1997 collected from pond and lake in China, is investigated by light and scanning electron microscopy. This little known taxon is redescribed and its morphology, biometry and ecology are supplied. After carefully comparison with other six similar species including Difflugia bartosi Stepanek, D. corona Wallich, D. corona cashi Deflandre, D. corona tuberculata Vucetich, D. muriformis Gauthier-Lievre et Thomas and Netzelia tuberculata (Wallich) Netzal we believe that the sub-spherical to spherical shell, the mulberry-shaped appearance, the 7-10 apertural tooth-like structures, the short collar and the conical spines numbering from 4 to 8 at the upper equatorial region in D. tuberspinifera set it apart from other species. Besides, statistical analysis indicates that D. tuberspinifera is a size-monomorphic species characterized by a main-size class and a small size range and the shell height is significant correlated with other morphometric characters at p < 0.05 excepting the number of aperture tooth-like structures and the number of spines. Moreover, D. tuberspinifera inhabits not only lotic but also lentic environment.

Phylogenetic relationships of the subclass Peritrichia (Oligohymenophorea, Ciliophora) inferred from small subunit rRNA gene sequences

The phylogenetic relationships among peritrichs remain unresolved. In this study, the complete small subunit rRNA (SSrRNA) gene sequences of seven species (Epistylis galea, Campanella umbellaria, Carchesium polypinum, Zoothamnium arbuscula, Vaginicola crystallina, Ophrydium versatile, and Opercularia microdiscum) were determined. Trees were constructed using distance-matrix, maximum-likelihood and maximum-parsimony methods, all of which strongly supported the monophyly of the subclass Peritrichia. Within the peritrichs, 1) E. galea grouped with Opercularia microdiscum and Campanella umbellaria but not the other Epistylis species, which indicates that the genus Epistylis might not be monophyletic; 2) the topological position of Carchesium and Campanella suggested that Carchesium should be placed in the family Zoothammidae, or be elevated to a higher taxonomic rank, and that Campanella should be independent of the family Epistylididae, and probably be given a new rank; and 3) Opisthonecta grouped strongly with Asty/ozoon, which suggested that Opisthonecta species were not the ancestors of the stalked peritrichs.

Growth and production of free-living heterotrophic nanoflagellates in a eutrophic lake - Lake Donghu, Wuhan, China

In situ growth of heterotrophic nanoflagellates (HNF) in Lake Donghu, a eutrophic shallow lake in mainland China, was studied from January 1999 to March 2000 using a modified Weisse protocol. The study results indicated that the growth rates of HNF showed pronounced seasonal variation (-0.37-1.25 d(-1)), reaching the maximum during spring to early summer. When the water temperature was higher than 25.5 degreesC, HNF growth was inversely proportional to water temperature. There was an effect by bacterial abundance and autotrophic picoplankton on HNF growth that depended on location. HNF biomass was the highest in late spring, and the HNF production ranged from -2.25 to 35.45 mg l(-1) d(-1) with mean of 3.17 mg l(-1) d(-1). When considered in the context of biomass and production data for zooplankton in Lake Donghu, it was evident that HNF contributed significantly to the total zooplankton production in Lake Donghu. These in situ studies indicate that temperature and food supply are the major determinants of HNF abundance and productivity.

Extracellular carbohydrate polymers from five desert soil algae with different cohesion in the stabilization of fine sand grain

Extracellular polymeric substances (EPS) from four filamentous cyanobacteria Microcoleus vaginatus, Scytonema javanicum, Phormidium tenue and Nostoc sp. and a coccoid single-cell green alga Desmococcus olivaceus that had been separated from desert algal crusts of Tegger desert of China, were investigated for their chemical composition, structure,and physical properties. The EPS contained 7.5-50.3% protein (in polymers ranging from 14 to more than 200 kD, SDS-PAGE) and 16.2-46.5% carbohydrate (110-460 kD, GFC). 6-12 kinds of monosaccharides, including 2-O-methyl rhamnose, 2-O-methyl glucose, and N-acetyl glucosamine were found. The main carbohydrate chains from M. vaginatus and S. javanicum consisted mainly of equal proportion of Man, Gal and Glc, that from P. tenue consisted mainly of arabinose, glucose and rhamnose. Arabinose was present in pyranose form, mainly alpha-L 1 --> 3 linked, with branches on C4 of almost half of the units. Glucose was responsible for the terminal units, in addition of having some units as beta1 --> 3 and some as beta1 --> 4 linked. Rhamnose was mainly 1 --> 3 linked with branches on C2 on half of the units. The carbohydrate polymer from D. olivaceus was composed mainly of beta1 --> 4 linked xylose, galactose and glucose. The galactose part was present both in beta-pyranose and -furanose forms. Arabinose in alpha-L-furanose form was mainly present as 1 --> 2 and 1 --> 2, 5 linked units, rhamnose only as alpha 1 --> 3 and xylose as beta 1 --> 4. The backbone of the polysaccharide from Nostoc sp. was composed of beta-1 --> 4 linked xylose, galactose and glucose. Most of the glucose was branched on position C6, terminal glucose and 2-O-methyl glucose units are also present. The relationship between structure, physical properties and potential biological function is discussed. (C) 2003 Elsevier Ltd. All rights reserved.

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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD

Aluminum nitride (AIN) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AIN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AIN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. The AIN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AIN growth.

Light extraction of GaN LEDs with 2-D photonic crystal structure

Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7 degrees, which means that the light extraction efficiency is enhanced outstandingly.

Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-Si in the film was (220). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H-2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. (C) 2004 Elsevier Ltd. All rights reserved.

Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer

We report on the comparative studies of epitaxial SiC films grown on silicon-on-insulator (SOI) and Si bulk substrates. The silicon-over-layer (SOL) on the SOI has been thinned down to different thicknesses, with the thinnest about 10 nm. It has been found that the full-width-at-half-maxim in the X-ray diffraction spectrum from the SiC films decreases as the SOL thickness decreases, indicating improved quality of the SiC film. A similar trend has also been found in the Raman spectrum. One of the potential explanations for the observation is strain accommodation by the ultra-thin SOI substrate. (c) 2005 Elsevier B.V. All rights reserved.

Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals

Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).