Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)

A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy, and the relieved misfit energy is proportional to the width of the stacking fault between the two partials.

Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme (linear combination of atomic orbitals) taking into account ten atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of a vacancy present in the core of the reconstructed 90 degrees partial dislocation in silicon. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. The three-fold degenerate stale of the ideal vacancy is split into three levels with energies 0.26, 1.1, and 1.9 eV measured from the valence band edge.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Dislocation nucleation governed softening and maximum strength in nano-twinned metals

In conventional metals, there is plenty of space for dislocations-line defects whose motion results in permanent material deformation-to multiply, so that the metal strengths are controlled by dislocation interactions with grain boundaries(1,2) and other obstacles(3,4). For nano-structured materials, in contrast, dislocation multiplication is severely confined by the nanometre-scale geometries so that continued plasticity can be expected to be source-controlled. Nano-grained polycrystalline materials were found to be strong but brittle(5-9), because both nucleation and motion of dislocations are effectively suppressed by the nanoscale crystallites. Here we report a dislocation-nucleation-controlled mechanism in nano-twinned metals(10,11) in which there are plenty of dislocation nucleation sites but dislocation motion is not confined. We show that dislocation nucleation governs the strength of such materials, resulting in their softening below a critical twin thickness. Large-scale molecular dynamics simulations and a kinetic theory of dislocation nucleation in nano-twinned metals show that there exists a transition in deformation mechanism, occurring at a critical twin-boundary spacing for which strength is maximized. At this point, the classical Hall-Petch type of strengthening due to dislocation pile-up and cutting through twin planes switches to a dislocation-nucleation-controlled softening mechanism with twin-boundary migration resulting from nucleation and motion of partial dislocations parallel to the twin planes. Most previous studies(12,13) did not consider a sufficient range of twin thickness and therefore missed this strength-softening regime. The simulations indicate that the critical twin-boundary spacing for the onset of softening in nano-twinned copper and the maximum strength depend on the grain size: the smaller the grain size, the smaller the critical twin-boundary spacing, and the higher the maximum strength of the material.

Mechanism Responsible for the Complete Suppression of Karman Vortex in Flows Past a Wavy Square-Section Cylinder

The Karman vortex shedding is totally suppressed in flows past a wavy square-section cylinder at a Reynolds number of 100 and the wave steepness of 0.025. Such a phenomenon is illuminated by the numerical simulations. In the present study, the mechanism responsible for it is mainly attributed to the vertical vorticity. The geometric disturbance on the rear surface leads to the appearance of spanwise flow near the base. The specific vertical vorticity is generated on the rear surface and convecting into the near wake. The wake flow is recirculated with the appearance of the pair of recirculating cells. The interaction between the upper and lower shear layers is weakened by such cells, so that the vortex rolls could not be formed and the near wake flow becomes stable.

A NEW WAKE OSCILLATOR MODEL FOR PREDICTING VORTEX INDUCED VIBRATION OF A CIRCULAR CYLINDER

This article proposes a new wake oscillator model for vortex induced vibrations of an elastically supported rigid circular cylinder in a uniform current. The near wake dynamics related with the fluctuating nature of vortex shedding is modeled based on the classical van der Pol equation, combined with the equation for the oscillatory motion of the body. An appropriate approach is developed to estimate the empirical parameters in the wake oscillator model. The present predicted results are compared to the experimental data and previous wake oscillator Model results. Good agreement with experimental results is found.

Multi-mode Vortex-induced Vibration of Slender Cable Experiencing Shear Flow

The dynamic characteristics of slender cable often present serried modes with low frequencies due to large structure flexibility resulted from high aspect ratio (ratio of length to diameter of cable), while the flow velocity distributes non-uniformly along the cable span actually in practical engineering. Therefore, the prediction of the vertex-induce vibration of slender cable suffered from multi-mode and high-mode motions becomes a challenging problem. In this paper a prediction approach based on modal energy is developed to deal with multi-mode lock-in. Then it is applied to the modified wake-oscillator model to predict the VIV displacement and stress responses of cable in non-uniform flow field. At last, illustrative examples are given of which the VIV response of flexible cable in nonlinear shear flow field is analyzed. The effects of flow velocity on VIV are explored. Our results show that both displacement and stress responses become larger as the flow velocity increasing; especially higher stress response companied with higher frequency vibration should be paid enough attention in practical design of SFT because of its remarkable influence on structure fatigue life.

Controlling parameter for wave types of long flexible riser undergoing vortex-induced vibration

Submerged floating tunnel (SFT) is a popular concept of crossing waterways. The failure of the cable may occur due to vortex-induced-vibration (VIV), and the stability of the cable is crucial to the safety of the entire tunnel. Investigation results in recent years show that the vortex-induced vibration of the flexible cables with large aspect ratio reveals some new phenomena, for example, the vortex-induced wave, multi-mode competition, wide band random vibration, which have brought new challenges to the study of vortex-induced vibration of long flexible cables. In this paper, the dimensionless parameter controlling the wave types of dynamic response of slender cables undergoing vortex-induced vibration is investigated by means of dimensional analysis and finite element numerical simulations. Our results indicate that there are three types of response for a slender cable, i.e. standing wave vibration, traveling wave vibration and intermediate state. Based on dimensional analysis the controlling parameter is found to be related to the system damping including fluid damping and structural damping, order number of the locked-in modes and the aspect ratio of cable. Furthermore through numerical simulations and parameter regression, the expression and the critical value of controlling parameter is presented. At last the physical meaning of the parameter is analyzed and discussed.

PREDICTION OF VORTEX-INDUCED VIBRATION OF FLEXIBLE RISER USING AN IMPROVED WAKE-OSCILLATOR MODEL

Based on improving the wake-oscillator model, an analytical model for vortex-induced vibration (VIV) of flexible riser under non-uniform current is presented, in which the variation of added mass at lock-in and the nonlinear relationship between amplitude of response and reduced velocity are considered. By means of empirical formula combining iteration computation, the improved analytical model can be conveniently programmed into computer code with simpler and faster computation process than CFD so as to be suitable to application of practical engineering. This model is validated by comparing with experimental result and numerical simulation. Our results show that the improved model can predict VIV response and lock-in region more accurately. At last, illustrative examples are given in which the amplitude of response of flexible riser experiencing VIV under action of non-uniform current is calculated and effects of riser tension and flow distribution along span of riser are explored. It is demonstrated that with the variation of tension and flow distribution, lock-in region of mode behaves in different way, and thus the final response is a synthesis of response of locked modes.

Dynamics of Vortex-Wave under a Travelling-Wave Modulation

The mecha nism of destabilization is studied for the rotating vortices (scroll waves and spiral waves) in excitable media induced by a parameter modulation in the form of a travelling-wave. It is found that a rigid rotating spiral in the two-dimensional (2D) system undergoes asynchronized drift along a straightline, and a 3D scrolling with its filament closed into a circle can be reoriented only if the direction of wavenumber of a travelling-wave perturbation is parallel to the ring plane. Then, in order to describe the behaviour of the synchronized drift of spiral wave and the reorientation of scrollring, the approximate formulas are given to exhibit qualitative agreements with the observed results.

New vortex solutions of Jackiw-Pi model

Based on current phi-mapping topological theory, a kind of self-dual equations in Jackiw-Pi model are studied. We first obtain explicit, self-dual solutions that satisfy Liouville equation which contains delta-function. Then we get perfect vortex solutions which reflect the system's internal topological structure, and consequently the quantization of flux.