Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

AlGaN-based resonant-cavity-enhanced (RCE) p-i-n photodetectors (PDs) for operating at the wavelength of 330 nm were designed and fabricated. A 20.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector (DBR) was used as the back mirror and a 3-pair AlN/Al0.3Ga0.7N DBR as the front one. In the cavity is a p-GaN/i-GaN/n-Al0.3Ga0.7N structure. The optical absorption of the RCE PD structure is at most 59.8% deduced from reflectance measurement. Selectively enhanced by the cavity effect, a response peak of 0.128 A/W at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. The peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

Birefringence of UV-written channel waveguides

The combination of the effective index method and the transfer matrix method is adopted to calculate the indices of quasi-TE and quasi-TM modes in a UV-written channel waveguide, and the difference between the indices is used to characterize its birefringence. The dimensions, the ratio of width to thickness, the original index of the core layer, the index of the cladding, and the index profile are all taken into account. The simulation results indicate that the birefringence decreases with increasing dimensions, ratio of width to thickness, and indices of the cladding; on the contrary, increases of the original index of the core layer and of the vertical index gradient intensified the birefringence. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Frequency dependence of junction capacitance of GaN p-i-n UV detectors

In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260 meV and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment. (c) 2005 Elsevier Ltd. All rights reserved.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.

Mode analysis of the UV-written channel waveguide - art. no. 60340J

The effective index method (EIM) was adopted to model the channel waveguide patterned by the UV in photosensitive silica film. The effective indexes of the different dimension symmetrical and asymmetrical channel waveguides were calculated, and the resource of the error of the method was pointed out. At last, the dimension rang to propagate single mode was presented.

硼磷酸盐及相关基质中稀土离子的UV－VUV光谱和XAFS

采用高温固相反应合成了稀土离子激活的碱土硼磷酸盐MBPO_5:RE（M=Ca, Sr, Ba；RE＝Sm, Eu, Tb, Dy), Ba_3BPO_7:RE和Ba_3BP_O_(12):RE、稀土硼磷酸盐Ln_7BP_2P_(17):RE (Ln=La, Gd)、碱土（稀土）磷酸盐M_3(PO_4)_2:RE (M=Sr, Ba),ABLa(PP_4)_2:Ce,Tb (A=K, Na;B＝Mg, Zn）、碱土（稀土）硼酸盐SrB_4O_7:RE（Re＝Sm, Eu），BaB_8O_(13):Eu，SrB_6O_(10):Sm, M_3Gd_2(BO_3）_4:RE (M＝Ca, Sr)，B_3O6:Eu(RE=La, Gd)和稀土硼钨酸盐Cd_3BWO_9:Eu。通过XRD、IR光谱和Raman光谱等表征了其结构。测定了上述19个基质的数十个发光体的UV佩VUV光谱和RE-L_3（RE=Sm,Eu, Gd)边的XANES和EXAFS。碱土硼磷酸盐Ba_3BPO_7和Ba_3BP_3O_(12)、稀土硼磷酸盐Ln_7BP_2O_(17) (Ln=La, Gd)和稀土钨硼酸盐Gd3Bwo9等6个基质中稀土离子的UV-VUV光谱和除个别基质（REB_3O_6等）外的VUV光谱均属首次报道。发现土稀土离子激活的这些发光体在VUV范围有丰富的基质吸收带。认为基质中阴离子的结构和基质的晶体结构可能是影响基质的吸收带位置的重要因素。通过XANEs和UV-VUV光谱的联系，结合经验公式首次确证了一些复合氧化物基质中一些RE~(3＋)在vuv范围的f-d跃迁位置。根据VUV光谱测定结果推测了一些基质中RE~(3+)的CTB位置。首次应用RE-L_3边的XANES和UV-VUV光谱两种方法分析比较了RE~(3＋)(RE=Eu, Sm)离子在空气条件下在碱土硼磷酸盐、硼酸盐和磷酸盐基质中的还原。首次应用高分辨发射光谱和RE-L_3边的EXAFS研究了在一些基质中发光中心的配位数、键长和格位对称性等结构因素。

新型有机锗化合物的合成、抗癌活性及其与DNA的相互作用研究

有机锗化合物具有广谱抗癌活性和低毒副作用，有关它们的合成、生物活性及应用研究引起了医药界和化学界的兴趣。但由于未注重有机基团的相关性，忽略了分子整体对抗癌作用的影响，至今尚未出现临床应用的高效低毒的有机绪抗癌新药，分子结构与抗癌活性关系及抗癌作用机理仍不清楚。因此，继续合成新型且具有结构可比性的有机锗抗癌活性化合物，研究药物与生物大分子DNA的相互作用、揭示有机锗化合物的结构与抗癌作用关系，具有重要的理论意义和应用价值。为此，本论文就以下几个方面开展了研究工作。1、合成了4种有机锗二元杂环化合物一有机锗喳琳醋和有机锗蔡酚醋化合物。根据它们的光谱性质讨论了其结构特征，该类化合物具有与Ge-132类似的空间结构，即具有-Ge-O-Ge-O-聚合网络大环结构。由于保留了有机锗倍半氧化物的基本结构，同时引入了能够与DNA有强烈相互作用的蔡酚和喳琳基团，可能会产生协同效应，使新化合物具有较强的抗癌活性和较好的选择性。2、在保留有机锗倍半氧化物的基本结构的基础上，引入了本身具有抗癌活性和光谱学性质，并且能够与DNA有相互作用的葱、葱醒、菲、荀、荀酮等三环有机基团，合成了16种未见报道的有机锗三元杂环化合物。以葱环为代表的杂环化合物，例如氮杂葱醌及氮杂葱并吡唑类化合物，作为重要的抗癌活性化合物，引起了药学界的极大兴趣。我们合成的新化合物，既保留了有机锗倍半氧化物的基本结构，又引入了葱环类化合物，进而使新化合物具有较强的抗癌活性和选择识别性。3、选择了8个药物小分子，分别应用UV-Vis、热变性（Melting）、荧光光I新型有机锗化合物的合成、抗癌活性及其与DNA的相互作用研究谱变化、粘度测定等方法，研究它们与3种DNA，即小牛胸腺DNA（CT－DNA）和2种人I合成的寡聚核昔酸［22一merspoly（dA·d劝和22一merspoly（dG·dC）］的相互作用。发现与DNA作用后，这些化合物的紫外吸收光谱均发生减色效应和红移现象，它们能使3种DNA的热变性温度（几）升高，粘度增加，说明化合物是以插入方式与DNA结合的。应用荧光滴定方法，求得了新化合物与DNA的结合常数，场在1护一105M一l范围内，属中等强度结合。进一步研究发现它们是以1：2（小分子／碱基对）的计量比与DNA碱基结合的。4、2种有机锗菲醋化合物（G一1、G一2）与DNA结合后，紫外吸收光谱产生减色效应和兰移现象以及荧光淬灭，对DNA的粘度基本无影响，它们是以沟槽结合方式与DNA发生作用的。发现G-1和G-2不仅能够增加三链DNA-Polv（dA·ZdT油的稳定性，并且能够促进Poly（dA．ZdT）22的形成。这一结果说明，某些结构的有机锗化合物可能以这种作用机理发挥抗癌作用，同时可以作为潜在的三链DNA稳定剂。5、研究了部分新合成的有机锗化合物（GK－1，GK-2，GN-1，GN-2，EK-1，EK-2，D-1，D-2，G-，G-2）对PC一3M和K562癌细胞的作用。GK-1，GK-2能够显著抑"制PC一3M细胞的增值，而且对细胞形态也产生了严重影响，显示了明显的细胞毒作用。流式细胞实验结果表明EK类化合物对PC-3M细胞周期有很大影响，发现对细胞增值的抑制作用发生在S期，即细胞内DNA合成期，细胞实验的结果也进一步验证了药物与DNA相互作用的事实。GN-1，GN-2，EK-1，EK-2，D-1，D-2，G-和G一2对K562细胞表现了较强的抑制作用，尤其GN-1和GN-2，效果更为明显，说明分子内有机锗链和其它基团的协向作用增强了整体化合物的生物学作用。6、有机锗二元杂环化合物与DNA的结合常数和体外抗癌活性明显高于有机锗三元杂环化合物，结合强度和抗癌活性之间呈现线形相关性。有机链中甲基的存在不利于有机锗二元杂环化合物与DNA的作用，同时降低了抗癌活性，而同样甲基的存在有利于有机锗三元杂环化合物与DNA的相互作用和抗癌功能的发挥。

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

UV-B辐射和CO2浓度倍增对树木幼苗次生代谢的影响

为了揭示UV-B辐射（11.66KJ／m2.d）和CO2浓度倍增复合作用对树木幼苗次生代谢产物变化规律及其对生长发育的影响，在室外用开顶箱，对白桦、红皮云杉和红松幼苗进行了模拟研究。结果表明，三种幼苗针叶片酚类含量增幅和变化趋势均不同。白桦类黄酮含量和305nm吸收值变化不大，红皮云杉和红松后期增加明显。白桦总黄酮和邻苯二酚含量增幅大于红皮云杉和红松。白桦和红松Chl和Car含量呈下降趋势，红皮云杉后期略有增加。白桦休眠侧芽极性小的酚类物质增加明显，根系酚类略有增加，枝条酚类无变化。红松越冬侧芽酚类和邻苯二酚含量增加明显。复合处理使三种幼苗PAL活性增加。酚类物质含量与其清除O-2和OH的能力基本成量效关系。单位多酚清除OH能力，红皮云杉＞红松＞白桦；多酚与蛋白质结合能力，白桦＞红松＞红皮云杉；MDA增幅，红松＞白桦＞红皮云杉。三种幼苗SOD活性后期增加明显。邻苯二酚对Chl、SOD、CAT活性和PSII有破坏作用。白桦酚类物质对SOD和CAT活性有破坏作用。复合处理对高生长抑制的程度白桦大于红松，而对红皮云杉影响不显著，体现UV-B和CO2处理的相互抵消作用。白桦根部生物量增加。红松针叶伸长受到抑制。可见，UV-B和CO2处理诱导的次生产物与幼苗生长发育有关。