EEG activities in the orbitofrontal cortex and dorsolateral prefrontal cortex during the development of morphine dependence, tolerance and withdrawal in rhesus monkeys

Investigating the activities of the prefrontal cortex (PFC) in the process of addiction is valuable for understanding the neural mechanism underlying the impairments of the PFC after drug abuse. However, limited data are obtained from primate animals and few studies analyze Electroencephalogram (EEG) in the gamma band, which plays an important role in cognitive functions. In addition, it is yet unclear whether drug abuse affects the orbitofrontal cortex (OFC) and dorsolateral PFC (DLPFC) - the two most important subregions of the PFC - in similar ways or not. The aim of this study is to address these issues. We recorded EEG in the OFC and DLPFC in three rhesus monkeys. All animals received a course of saline (NaCl 0.9%, 2 ml) injection (5 days) followed by 10 days of morphine injection (every 12 h), and then a further series of saline injection (7 days). A main finding in the present study was that morphine decreased EEG power in all frequency bands in a short period after injection in both the OFC and DLPFC in monkeys. And gamma power decreased not just in short period after morphine injection but lasted to 12 h after injection. Moreover, we found that although the changes in EEG activities in the OFC and DLPFC at 30-35 min after injection were similar, the DLPFC was more sensitive to the effect of morphine than the OFC. (c) 2005 Elsevier B.V. All rights reserved.

Enhanced expression of antifreeze protein genes drives the development of freeze tolerance in an Antarctica isolate of Chlorella vulgaris

In adaptation to new environments, organisms may accumulate mutations within encoding sequences to modify protein characteristics or acquire mutations within regulatory sequences to alter gene expression levels. With the development of antifreeze capability as the example, this study presents the evidence that change in gene expression level is probably the most important mechanism for adaptive evolution in a green alga Chlorella vulgaris. C. vulgaris NJ-7, an isolate from Antarctica, possesses an 18S rRNA sequence identical to that of a temperate isolate, SAG211-11b/UTEX259, but shows much higher freeze tolerance than the later isolate. The chromosomal DNA/cDNA of four antifreeze genes, namely hiC6, hiC12, rpl10a and hsp70, from the two isolates of C. vulgaris were cloned and sequenced, and very few variations of deduced amino acid sequences were found. In contrast, the transcription of hiC6, hiC12 and rpl10a was greatly intensified in NJ-7 compared to that in UTEX259, which is correlated to the significantly enhanced freeze tolerance of the Antarctica isolate. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

The role of glutathione metabolism in tolerance of tobacco BY-2 suspension cells to microcystin-RR

This study was undertaken to investigate the role of the glutathione-involved detoxifying mechanism in defending the tobacco BY-2 suspension cells against microcystin-RR (MC-RR). Analysis showed that exposure of the cells to different concentrations of MC-RR (0.1, 1 and 10 mu g/mL) for 0-6 days resulted in a time and concentration-dependent decrease in cell viability and increase in reactive oxygen species (ROS) content. Reduced glutathione (GSH) and total glutathione (tGSH) content as well as glutathione reductase (GR), glutathione peroxidase (GPX) and glutathione-S-transferase (GST) activities significantly increased after 3-4 days exposure in the highest two concentration treated groups, while decreased until reaching the control values except for GPX at day 6. Oxidized glutathione (GSSG) content markedly increased compared with control in high concentration MC-RR treated group after 6 days exposure. The GSH/GSSG ratio was much higher than control in 10 mu g/mL MC-RR treated group at day 4, but after 6 days exposure, the ratios in all treated groups were lower than that of the control group.

alpha-tocopherol is essential for acquired chill-light tolerance in the cyanobacterium Synechocystis sp strain PCC 6803

Unlike Escherichia coli, the cyanobacterium Synechocystis sp. strain PCC 6803 is insensitive to chill (5 degrees C) in the dark but rapidly losses viability when exposed to chill in the light (100 mu mol photons m(-2) s(-1)). Preconditioning at a low temperature (15 degrees C) greatly enhances the chill-light tolerance of Synechocystis sp. strain PCC 6803. This phenomenon is called acquired chill-light tolerance (ACLT). Preconditioned wild-type cells maintained a substantially higher level of alpha-tocopherol after exposure to chill-light stress. Mutants unable to synthesize alpha-tocopherol, such as slr1736, slr1737, slr0089, and slr0090 mutants, almost completely lost ACLT. When exposed to chill without light, these mutants showed no or a slight difference from the wild type. When complemented, the slr0089 mutant regained its ACLT. Copper-regulated expression of slr0090 from P-petE controlled the level of et-tocopherol and ACLT. We conclude that alpha-tocopherol is essential for ACLT of Synechocystis sp. strain PCC 6803. The role of a-tocopherol in ACLT may be based largely on a nonantioxidant activity that is not possessed by other tocopherols or pathway intermediates.

Response of Microcystis to copper stress - Do phenotypes of Microcystis make a difference in stress tolerance?

To elucidate the role of phenotype in stress-tolerant bloom-forming cyanobacterium Microcystis, two phenotypes of M. aeruginosa-unicellular and colonial strains were selected to investigate how they responded to copper stress. Flow cytometry (FCM) examination indicated that the percents of viable cells in unicellular and colonial Microcystis were 1.92-2.83% and 72.3-97.51%, respectively, under 0.25 mg l(-1) copper sulfate treatment for 24 h. Upon exposure to 0.25 mg l(-1) copper sulfate, the activities of antioxidative enzyme, such as superoxide dismutase (SOD) and catalase (CAT), were significantly increased in colonial Microcystis compared to unicellular Microcystis. Meanwhile, the values of the photosynthetic parameters (F-v/F-m, ETRmax and oxygen evolution rate) decreased more rapidly in unicellular Microcystis than in colonial Microcystis. The results indicate that colonial Microcystis has a higher endurance to copper than unicellular Microcystis. This suggests that the efficient treatment concentration of copper sulfate as algaecides will be dependent on the phenotypes of Microcystis. (C) 2006 Elsevier Ltd. All rights reserved.

Identification of a gene, ccr-1 (sll1242), required for chill-light tolerance and growth at 15 degrees C in Synechocystis sp PCC 6803

Synechocystis sp. PCC 6803 exposed to chill (5 degrees C)-light (100 mu mol photons m(-2) s(-1)) stress loses its ability to reinitiate growth. From a random insertion mutant library of Synechocystis sp. PCC 6803, a sll1242 mutant showing increased sensitivity to chill plus light was isolated. Mutant reconstruction and complementation with the wild-type gene confirmed the role of sll1242 in maintaining chill-light tolerance. At 15 degrees C, the autotrophic and mixotrophic growth of the mutant were both inhibited, paralleled by decreased photosynthetic activity. The expression of sll1242 was upregulated in Synechocystis sp. PCC 6803 after transfer from 30 to 15 degrees C at a photosynthetic photon flux density of 30 mu mol photons m(-2) S-1. sll1242, named ccr (cyanobacterial cold resistance gene)- 1, may be required for cold acclimation of cyanobacteria in light.

Development of tolerance against toxic Microcystis aeruginosa in three cladocerans and the ecological implications

This is the first experimental study to compare difference in the development of tolerance against toxic Microcystis among multi-species of cladocerans (Daphnia, Moina and Ceriodaphnia) pre-exposed to two M. aeruginosa PCC7820 strains (MC-containing and MC-free). Zooplankton were divided into S population (fed Scenedesmus), M-F population (fed Scenedesmus + MC-free Microcystis), and M-C population (fed Scenedesmus + MC-containing Microcystis). M-F and M-C populations were pre-exposed to Microcystis strains for 4 weeks, and their newborns were collected for experiments. A pre-exposure to MC-containing or MC-free Microcystis increased tolerance against toxic Microcystis. The marked increases in survival rate and median lethal time (LT50, 100-194% increase) in the M-C population of Ceriodaphnia suggest that small-sized cladocerans may develop stronger tolerance against Microcystis than large-sized ones when both groups are exposed to toxic Microcystis. This may explain why dominant Daphnia is usually replaced by small-sized cladocerans when cyanobacteria bloomed in summer in eutrophic lakes. (c) 2005 Elsevier Ltd. All rights reserved.

Salt tolerance of Microcoleus vaginatus Gom., a cyanobacterium isolated from desert algal crust, was enhanced by exogenous carbohydrates

Microcoleus vaginatus isolated from a desert algal crust of Shapotou was cultured in BG-11 medium containing 0.2mol l(-1) NaCl or 0.2mol l(-1) NaCl plus 100mg l(-1) sucrose, extracellular polymeric substances (EPS) or hot water-soluble polysaccharides (HWP), respectively. Photosynthetic oxygen evolution rates, photosystem 11 activity (Fv/Fm) and dark respiration of NaCl-stressed cells were enhanced significantly by the added sucrose or EPS under salt stress conditions (0.2mol l(-1) NaCl). Compared with cells treated with salt alone, sodium contents in cells reduced significantly; the content of cellular total carbohydrate did not change, and intracellular sucrose, water-soluble sugar increased significantly following the addition of exogenous carbohydrates. Sucrose synthase (SS) activity of NaCl-stressed cells increased following the addition of sucrose, and sucrose phosphate synthase (SPS) activity of NaCl-stressed cells increased following the addition of exogenous sucrose, EPS or HWP compared with cells stressed with NaCl only. The results suggested that the extruded EPS might be re-absorbed by cells of M. vaginatus as carbon source, they could increase salt tolerance of M. vaginatus through the changes of carbohydrate metabolism and the selective uptake of sodium ions. (C) 2003 Elsevier Science Ltd. All rights reserved.

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.

A low-cost CMOS programmable temperature

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature T-th can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature T-th variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 mu m CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature T(th)s from 45-120 degrees C with a 5 degrees C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm(2) and power consumption is 3.1 mu A at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis.

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping

1.5 mu m. n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm(2) for 1000 mu m long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated.