Effects of point defects on lattice parameters of semiconductors

A model for analyzing the correlation between lattice parameters and point defects in semiconductors has been established. The results of this model for analyzing the substitutes in semiconductors are in accordance with those from Vegard's law and experiments. Based on this model, the lattice strains caused by the antisites, the tetrahedral and octahedral single interstitials, and the interstitial couples are analyzed. The superdilation in lattice parameters of GaAs grown at low temperatures by molecular-beam epitaxy can be interpreted by this model, which is in accordance with the experimental results. This model provides a way of analyzing the stoichiometry in bulk and epitaxial compound semiconductors nondestructively.

Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction

An (A1As/GaAs/A1As/A1GaAs)/GaAs(001) double-barrier superlattice grown by molecular beam epitaxy (MBE) is studied by combining synchrotron radiation and double-crystal x-ray diffraction (DCD). The intensity of satellite peaks is modulated by the wave function of each sublayer in one superlattice period. Simulated by the x-ray dynamical diffraction theory, it is discovered that the intensity of the satellite peaks situated near the modulating wave node point of each sublayer is very sensitive to the variation of the layer structural parameters, The accurate layer thickness of each sublayer is obtained with an error less than 1 Angstrom. Furthermore, x-ray kinematical diffraction theory is used to explain the modulation phenomenon. (C) 1996 American Institute of Physics.

A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node

This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.

Isospin dependence of the nuclear equation of state near the critical point

We discuss experimental evidence for a nuclear phase transition driven by the different concentrations of neutrons to protons. Different ratios of the neutron to proton concentrations lead to different critical points for the phase transition. This is analogous to the phase transitions occurring in He-4-He-3 liquid mixtures. We present experimental results that reveal the N/A (or Z/A) dependence of the phase transition and discuss possible implications of these observations in terms of the Landau free energy description of critical phenomena.

THE ISOSPIN DEPENDENCE OF THE NUCLEAR PHASE TRANSITION NEAR THE CRITICAL POINT

The experimental results reveal the isospin dependence of the nuclear phase transition in terms of the Landau Free Energy description of critical phenomena. Near the critical point, different ratios of the neutron to proton concentrations lead to different critical points for the phase transition which is analogous to the phase transitions in He-4-He-3 liquid mixtures. The antisymmetrized molecular dynamics (AMD) and GEMINI models calculations were also performed and the results will be discussed as well.

Stability shear stress and equilibrium cross-sectional geometry of sheltered tidal channels

This study relates tidal channel cross-sectional area (A) to peak spring discharge (Q) via a physical mechanism, namely the stability shear stress ( tau sub(S)) just necessary to maintain a zero gradient in net along-channel sediment transport. It is assumed that if bed shear stress ( tau ) is greater than tau sub(S), net erosion will occur, increasing A, and reducing tau similar to (Q/A) super(2) back toward tau sub(S). If tau < tau sub(S) there will be net deposition, reducing A and increasing tau toward tau sub(S). A survey of the literature allows estimates of Q and A at 242 sections in 26 separate sheltered tidal systems. Assuming a single value of tau sub(S) characterizes the entire length of a given tidal channel, it is predicted that along-channel geometry will follow the relation Ah sub(R) super(1) super(/) super(6) similar to Q. Along-channel regressions of the form Ah sub(R) super(1) super(/) super(6) similar to Q super( beta ) give a mean observed value for beta of 1.00 plus or minus 0.06, which is consistent with this concept. Results indicate that a lower bound on tau sub(S) (and an upper bound on A) for stable channels is provided by the critical shear stress ( tau sub(C)) just capable of initiating sediment motion. Observed tau sub(S) is found to vary among all systems as a function of spring tidal range (R sub(sp)) according to the relation tau sub(S) approximately 2.3 R sub(sp) super(0.79) tau sub(C). Observed deviations from uniform tau sub(S) along individual channels are associated with along-channel variation in the direction of maximum discharge (i.e., flood-versus ebb-dominance).

Determination of Point of Zero Charge of Tunisian Kaolinites by Potentiometric and Mass Titration Methods

This paper deals with determining points of zero charge of natural and Na+-saturated mineral kaolinites using two methods: (1) acid-base potentiometric titration was employed to obtain the adsorption of H+ and OH- on amphoteric surfaces in solutions of varying ionic strengths in order to determinate graphically the point of zero net proton charge (PZNPC) defined equally as point of zero salt effect (PZSE); (2) mass titration curve at different electrolyte concentrations in order to estimate PZNPCs by interpolation and to compare with those determined by potentiometric titrations. The two methods involved points of zero charge approximately similar for the two kaolinites between 6.5-7.8, comparable to those reported previously and were in the range expected for these clay minerals. The comparison of potentiometric surface titration curves obtained at 25 °C and those published in the literature reveals significant discrepancies both in the shape and in the pH of PZNPCs values.

zero point of charge of cupric hydroxide and surface area determination by dye adsorption

zero point of charge of freshly precipitated cu(oh)2 has been determined to lie at pH 7.7 by means of microclectrophoresis technique. Day aged hydroxide shows an acid zpc shift to pH 7.3. these experimental values approximate the equivalence points of cu+ and oh_ ,which can be estimated from the solubility diagram constructed fo gu(oh)2 and cuo.