Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of GaxAlyIn1-x-yN alloy lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N. (C) 2002 Elsevier Science B.V. All rights reserved.

Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E

GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Further-more, in order to broaden the absorbing edge, Ga1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.

Growth behavior of AlInGaN films

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers

In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

糖原酸酯合成方法的研究以及二环糖胺的合成

在糖化学中，糖原酸酯是一类重要的合成中间体，广泛运用于1,2-反式糖苷的合成，尤其对于寡糖的立体选择性合成具有重要的价值。目前文献报道的制备糖原酸酯的方法大多存在对环境不友好的问题。本文对传统的糖原酸酯制备方法进行了改进，通过研究发现无机碱也能够有效地催化合成糖原酸酯。以溴代糖和醇（或糖基受体）为原料，在无机碱、四丁基溴化铵、乙腈的体系中，合成了一系列简单醇糖原酸酯和糖-糖原酸酯。 聚乙二醇及其衍生物作为有机反应的溶剂和催化剂在有机化学中有广泛的应用。本文阐述了一种以溴代糖和醇（或糖基受体）为原料，在无机碱和聚乙二醇二甲醚反应体系中合成糖原酸酯的方法。该方法中，聚乙二醇二甲醚即作为绿色溶剂又作为催化剂，反应条件温和、环保、高效。 糖胺是一类重要的糖苷酶抑制剂，已在糖尿病和其他代谢紊乱等疾病的治疗中发挥了极其重要的作用。本文提供了一种合成一类具有潜在的糖苷酶抑制活性、结构新颖的二环糖胺的途径。该合成思路是以1-叠氮基-2-C-乙酰甲基-3,4,6-三-O-苄基-2-脱氧-β-D-葡萄糖为原料，经二环糖亚胺中间体，通过二环糖亚胺还原或加成得到一类二环糖胺。 Sugar orthoesters as one of the most important intermediates in carbohydrate chemistry, are used extensively in the synthesis of sugar 1,2-trans-glycosides, especially oligosaccharide. These methods in the literature are mostly eco-unfriendly. Herein we described a modified protocol for the preparation of sugar orthoesters using inorganic base, by improving the conventional method. Our method involves the treatment of peracetylated or perbenzotlated glycosyl bromides with alcohols in the presence of a quaternary ammonium salt and an inorganic alkali in acetonitrile solvent, affording both simple sugar orthoesters and sugar-sugar orthoesters. Polyethylene glycol and their derivatives as solvents or catalysts play a significant role in the organic reaction. We developed a novel and environmentally benign methodology towards the synthesis of sugar orthoesters, which are prepared by the reaction of peracetylated or perbenzotlated glycosyl bromides and alcohols in the presence of dimethyl ether of polyethylene glycol as either the reaction medium or catalyst. Glycosylamines and pseudo-glycosylamines have been tested against various glycosidases, and applied to the treatment of diabetes and other metabolic disorders. We presented a route of the synthesis of a bicyclic glycosylamine as a potential glycosidases inhibitor with unique structure. Reduction of 2-C-acetlymethyl-β-glucopyranosyl azide derivative firstly produced a bicyclic glycosylimine intermediate, and subsequently the bicyclic glycosylamine and its derivatives would be prepared through the selective reduction or addition the C=N double bond of the bicyclic glycosylimine intermediate.