Dependence of linear electro-optic coefficient on difference in the atomic sizes in zinc blende crystals

Covalent radii of the bonding elements have strong effects on the linear electro-optic coefficients of zinc blende crystals; these effects can be quantitatively determined by investigating the relation between the difference in the atomic sizes rho and the magnitude of the linear electro-optic tensor coefficient r(41). It is interesting to note that for the same cation Zn2+, Ga3+, or In3+ the magnitude of r(41) increases with increased covalent radius of the bonded anion r(beta). Especially with the increasing tendency of the parameter rho, the magnitude of r(41) of crystals that have a same cation will increase suddenly when the value of r(beta) becomes larger. (C) 1997 Academic Press.

Bond-charge calculation of electro-optic coefficients of diatomic crystals

A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.

Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

Research on Q-Switched Nd : YAG laser engraving

IN this paper, the engraving process with Q-Switched Nd:YAG laser is investigated. High power density is the pre- requisition to vapor materials, and high repetition rate makes the engraving process highly efficient. An acousto- optic Q-Switch is applied in the cavity of CW 200 W Nd:YAG laser to achieve the high peak power density and the high pulse repetition rate. Different shape craters are formed in a patterned structure on the material surface when the laser beam irradiates on it by controlling power density, pulse repetition rate, pulse quantity and pulse interval. In addition, assisting oxygen gas is used for not only improving combustion to deepen the craters but also removing the plasma that generated on the top of craters. Off-focus length classified as negative and positive has a substantial effect on crater diameters. According to the message of rotating angle positions from material to be engraved and the information of graph pixels from computer, a special graph is imparted to the material by integrating the Q- Switched Nd:YAG laser with the computer graph manipulation and the numerically controlled worktable. The crater diameter depends on laser beam divergence and laser focal length. The crater diameter changes from 50 micrometers to 300 micrometers , and the maximum of crater depth reaches one millimeter.

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO3 using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO3 by femtosecond laser ablation; (2) formation of AgNO3 films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modi. cation of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO3 crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices. (C) 2008 Elsevier B. V. All rights reserved.

Generation of 17-TW 23-fs pulses with a two-stage Ti : Sapphire amplifier at repetition rate 10 Hz

We have developed a two-stage Ti:sapphire amplifier system which can produce 17-TW/23-fs pulses at a repetition rate 10 MHz. A birefringent plate is used in the regenerative amplifier to alleviate gain narrowing, while an all-reflective cylindrical-mirror-based pulse stretcher and an acousto-optic programmable dispersive filter (AOPDF) are used to compensate for the higher order dispersion of the system.

Parasitic lasing suppression in high gain femtosecond petawatt Ti: sapphire amplifier

New parasitic lasing suppression techniques are developed and high gain amplification is demonstrated in a petawatt level Ti:sapphire amplifier based on the chirped pulse amplification (CPA) scheme. Cladding the large aperture Ti: sapphire with refractive-index matched liquid doped with absorber suppresses the transverse lasing. The acousto-optic programmable dispersive filter (AOPDF) is used to realize side-lobe suppression in the temporal profile of the compressed pulse. The 800 nm laser output with peak power of 0.89 PW and pulse width of 29.0 fs is demonstrated. (c) 2007 Optical Society of America.

光纤光栅高温传感器的研究

提出了一种能够测量高温的光纤布拉格光栅（FBG）传感器结构。利用线膨胀系数和长度均不同的两种金属细杆和光纤布拉格光栅设计而成的传感头，能够将被测温度转化为光栅的应变，解调由应变引起的光栅波长漂移，即可得知待测的温度。目前在实验室实现了500℃的动态范围和1℃的温度分辨率，实验结果与理论分析一致。

裂缝光纤传感的工程应用

光纤传感的灵敏性及工程"存活率"是其工程实用化的两个关键技术参量,对光纤-混凝土结构两种常用裂缝光纤传感光信号对裂缝宽度的灵敏性与存活率进行了实验研究,对光纤涂覆层对灵敏性影响的大小和机理进行了分析,并制作了灵敏性与存活率均较高的光纤试验样本,与裂缝成45°夹角时,相比于等直径的普通二次涂覆粗光纤(10/125/900μm),样本的灵敏性提高近65%,而存活率亦高出约15%。研究结果可为裂缝光纤传感的优化设计和工程应用提供了基本参照。

光纤涂敷层对光纤裂缝传感器分布式监测能力的影响

基于混凝土模型试验，对涂敷层的传感光纤的裂缝复用能力进行了定量分析，得到了传感光纤和工程结构裂缝夹角在30°，45°，60°时的复用能力与裂缝宽度的关系曲线。对由软性材料构成的光纤涂敷层来说，光纤的复用能力随涂敷层厚度的增加而增大，在与裂缝夹角成45°时，二次涂敷粗光纤的复用能力约为细光纤的5倍，表明光纤敷层对光纤裂缝监测的复用能力具有较大影响。对这种影响的机理进行了理论分析和试验研究，发现当混凝土开裂时，光纤沿混凝土界面的滑移是光纤涂敷层影响光纤裂缝复用能力的主要原因，在光纤与裂缝夹角成45°时，这一影

混凝土高坝裂缝光纤分布式监测能力的研究

基于单点裂缝模型试验结果分析,提出了一种利用瑞利散射的工程结构裂缝光纤监测复用能力的方法,得到水工混凝土裂缝光纤监测两种典型方案的裂缝复用能力,结合三峡工程泄洪坝段上游面出现的裂缝,进行了光纤裂缝传感复用能力的工程适用性分析,进一步揭示工程裂缝光纤分布式监测能力研究的意义.

大坝裂缝方位对光纤裂缝传感器灵敏性的影响

基于混凝土模型试验,对大坝裂缝方位的随机性对基于瑞利散射的光纤裂缝传感灵敏性的影响进行了定量分析,得到了传感光纤在大坝安全监控缝宽控制范围内,与裂缝夹角为20°、30°、45°、60°时的光纤灵敏性与裂缝宽度关系曲线。实验发现裂缝与光纤的方位角每增加15°,则光纤的灵敏性降低一半以上,这表明工程裂缝方位的随机性对光纤裂缝传感的灵敏性具有较大影响。对此影响的力学机理进行了分析,并提出相应的工程对策。

基于偏振度检测的光纤电流传感方案

本文提出了一种将光学谐振腔中多次来回反射所产生的法拉第旋转积累效应转化为光学信号偏振度变化的光纤电流传感方案。这种方案的主要优点是可以克服环境等因素的扰动带来偏振态变化所产生的影响。文中对所提出方案的特性进行了简单的理论分析和模拟计算，并给出了相应的实验结果验证。

长周期光纤光栅波导色散因子和有效折射率热光系数的测量

对串联的长周期光纤光栅(CLPFG)的透射谱特性进行了理论分析和实验研究。分析表明，长周期光纤光栅中纤芯模和包层模之间的马赫-曾德尔干涉效应导致在长周期光纤光栅谐振峰内的梳状滤波结构特性；其峰值位置和峰间距同串联区光纤的长度以及光纤的波导色散因子有关。测量了长周期光纤光栅的透射谱，并研究了其温度特性。根据测量数据，得到对应于1554nm波长处，所用单模光纤HE14模的波导色散因子γ为0．874；纤芯／包层有效折射率差的热光系数为4．8×10^-5℃^-1。并对这一测试方法和结果，以及长周期光纤光栅的应用进

Compact parallel optical modified-signed-digit arithmetic-logic array processor with electron-trapping device

A compact two-step modified-signed-digit arithmetic-logic array processor is proposed. When the reference digits are programmed, both addition and subtraction can be performed by the same binary logic operations regardless of the sign of the input digits. The optical implementation and experimental demonstration with an electron-trapping device are shown. Each digit is encoded by a single pixel, and no polarization is included. Any combinational logic can be easily performed without optoelectronic and electro-optic conversions of the intermediate results. The system is compact, general purpose, simple to align, and has a high signal-to-noise ratio. (C) 1999 Optical Society of America.