Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Visible vertical cavity surface emitting laser

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.

880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM

We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

1.2 MeV/40 mA电子加速器的研制

装置应国内辐照加工需求而研制,采用单相无铁芯变压器结构,初级供以400 Hz的中频交流,次级全波整流倍压后级联形成直流高压。加速管同心地位于次级线圈内,电子枪采用间热式LaB6发射阴极。该装置结构紧凑,电子束1.2 MeV/40 mA,束流功率近50 kW,不稳定度均好于±5%,电功率转化效率高于65%,已通过8 h运行测试。

An 8.1 Ma calcite record of Asian summer monsoon evolution on the Chinese central Loess Plateau

IEECAS SKLLQG

Plio-Quaternary stepwise drying of Asia: Evidence from a 3-Ma pollen record from the Chinese Loess Plateau

IEECAS SKLLQG

Pollen record from red clay sequence in the central Loess Plateau between 8.10 and 2.60 Ma

IEECAS SKLLQG

Tectonic uplift in the northern Tibetan Plateau since 13.7 Ma ago inferred from molasse deposits along the Altyn Tagh Fault

IEECAS SKLLQG

黄土高原陇东盆地朝那红黏土8.1～2.6 Ma的孢粉记录

IEECAS SKLLQG