Selective metallization on insulator surfaces with femtosecond laser pulses

We report selective metallization on surfaces of insulators ( glass slides and lithium niobate crystal) based on femtosecond laser modification combined with electroless plating. The process is mainly composed of four steps: (1) formation of silver nitrate thin films on the surfaces of glass or crystal substrates; (2) generation of silver particles in the irradiated area by femtosecond laser direct writing; (3) removal of unirradiated silver nitrate films; and (4) selective electroless plating in the modified area. We discuss the mechanism of selective metallization on the insulators. Moreover, we investigate the electrical and adhesive properties of the copper microstructures patterned on the insulator surfaces, showing great potential of integrating electrical functions into lab-on-a-chip devices. (C) 2007 Optical Society of America.

The gated integration technique for the accurate measurement of the autocorrelation function of speckle intensities scattered from random phase screens

A new approach based on the gated integration technique is proposed for the accurate measurement of the autocorrelation function of speckle intensities scattered from a random phase screen. The Boxcar used for this technique in the acquisition of the speckle intensity data integrates the photoelectric signal during its sampling gate open, and it repeats the sampling by a preset number, in. The average analog of the in samplings output by the Boxcar enhances the signal-to-noise ratio by root m, because the repeated sampling and the average make the useful speckle signals stable, while the randomly varied photoelectric noise is suppressed by 1/ root m. In the experiment, we use an analog-to-digital converter module to synchronize all the actions such as the stepped movement of the phase screen, the repeated sampling, the readout of the averaged output of the Boxcar, etc. The experimental results show that speckle signals are better recovered from contaminated signals, and the autocorrelation function with the secondary maximum is obtained, indicating that the accuracy of the measurement of the autocorrelation function is greatly improved by the gated integration technique. (C) 2006 Elsevier Ltd. All rights reserved.

Scheme for unconventional geometric quantum computation in cavity QED

In this paper, we present a scheme for implementing the unconventional geometric two-qubit phase gate with nonzero dynamical phase based on two-channel Raman interaction of two atoms in a cavity. We show that the dynamical phase and the total phase for a cyclic evolution are proportional to the geometric phase in the same cyclic evolution; hence they possess the same geometric features as does the geometric phase. In our scheme, the atomic excited state is adiabatically eliminated, and the operation of the proposed logic gate involves only the metastable states of the atoms; thus the effect of the atomic spontaneous emission can be neglected. The influence of the cavity decay on our scheme is examined. It is found that the relations regarding the dynamical phase, the total phase, and the geometric phase in the ideal situation are still valid in the case of weak cavity decay. Feasibility and the effect of the phase fluctuations of the driving laser fields are also discussed.

Temporal confinement and enhancement of high-order harmonic emission with a synthesized laser field

We demonstrated that a synthesized laser field consisting of an intense long (45 fs, multi-optical-cycle) laser pulse and a weak short (7 fs, few-optical-cycle) laser pulse can control the electron dynamics and high-order harmonic generation in argon, and generate extreme ultraviolet supercontinuum towards the production of a single strong attosecond pulse. The long pulse offers a large amplitude field, and the short pulse creates a temporally narrow enhancement of the laser field and a gate for the highest energy harmonic emission. This scheme paves the way to generate intense isolated attosecond pulses with strong multi-optical-cycle laser pulses.

星载激光测距仪的高精度时间间隔测量单元

高精度时间间隔测量单元(TIU)是星载激光测距仪的关键部件。基于现场可编程门阵列(FPGA)研制出了满足星载要求的高精度、高集成度时间间隔测量单元。该单元采用数字计数法结合数字延迟线插入法的技术,在0.5～10 km的测量距离范围内,时间分辨率为500 ps。通过地面检测,在全程范围内保持了良好的线性度,标准偏差小于270 ps。该单元同时具备测量脉冲回波宽度的能力,可以获取目标的脉冲展宽信息。由于单元选用的元器件都具有航天产品性能,因此其设计和技术指标可满足星载激光测距仪的应用。

A study of a Q-switched double-clad ytterbium-doped fiber laser with amplifying effect

A high repetition rate ytterbium-doped double-clad (YDDC) fiber laser with amplifying effect is described by using acousto-optic modulator. The characteristic of Q-switched pulses are studied with accurate control of opening gate time of modulator. The stable Q-switched pulses with tens of nanoseconds width can be observed at high repetition rate varied from 50 kHz to 500 kHz using this laser. The stable operation area of the Q-switched fiber laser is discussed and the analysis results agree well with that of the experiment. (c) 2007 Elsevier B.V. All rights reserved.

Microstructure of the crystals generated in borate glass irradiated by femtosecond laser pulses

In this study, we examined the microstructure of crystals generated in borate glass by femtosecond laser irradiation (FSLI). The distribution of the high-temperature and low-temperature phases of barium metaborate crystals produced in the borate glass is analyzed using Raman spectroscopy. We then propose the possible mechanism for the generation of crystals in glass by FSLI.

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Effect of a feeding stimulant on feeding adaptation of gibel carp Carassius auratus gibelio (Bloch), fed diets with replacement of fish meal by meat and bone meal

The objectives of the study were to investigate the effect of a feeding stimulant on feeding adaptation of gibel carp (Carassius auratus gibelio Bloch) fed diets with replacement of fish meal by meat and bone meal (MBM), and whether or not the juvenile gibel carp could adapt to higher MBM level in the diet. Juvenile and adult gibel carp were tested. Two and one replacement levels were used for juvenile and adult fish respectively. Each group of diets was set as two types with or without a unique rare earth oxide: Y2O3, Yb2O3, La2O3, Sm2O3, Nd2O3 or Gd2O3 (only the first four rare earth oxides were used in adult diets) for four adaptation periods of 3, 7, 14 and 28 days respectively. After mixing, an equal mixture of all six diets for juvenile or four diets for adult was offered in excess for 2 days. During the last 2 days of each experiment, no feed was offered and faeces from each tank were collected. Feeding preference was expressed as relative feed intake of each diet, which was estimated based on the relative concentration of each marker in the faeces. Given some adaptation period, such as 3-28 days, the effects of MBM and squid extract inclusion on the preference to each diet were reduced. After 28 days adaptation, the preferences between groups were not significantly different.

Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.

Rashba electron transport in one-dimensional quantum waveguides

The properties of Rashba wave function in the planar one-dimensional waveguide are studied, and the following results are obtained. Due to the Rashba effect, the plane waves of electron with the energy E divide into two kinds of waves with the wave vectors k(1)=k(0)+k(delta) and k(2)=k(0)-k(delta), where k(delta) is proportional to the Rashba coefficient, and their spin orientations are +pi/2 (spin up) and -pi/2 (spin down) with respect to the circuit, respectively. If there is gate or ferromagnetic contact in the circuit, the Rashba wave function becomes standing wave form exp(+/- ik(delta)l)sin[k(0)(l-L)], where L is the position coordinate of the gate or contact. Unlike the electron without considering the spin, the phase of the Rashba plane or standing wave function depends on the direction angle theta of the circuit. The travel velocity of the Rashba waves with the wave vector k(1) or k(2) are the same hk(0)/m*. The boundary conditions of the Rashba wave functions at the intersection of circuits are given from the continuity of wave functions and the conservation of current density. Using the boundary conditions of Rashba wave functions we study the transmission and reflection probabilities of Rashba electron moving in several structures, and find the interference effects of the two Rashba waves with different wave vectors caused by ferromagnetic contact or the gate. Lastly we derive the general theory of multiple branches structure. The theory can be used to design various spin polarized devices.

Tuning of the two electron states in quantum rings through the spin-orbit interaction

The effect of the Coulomb interaction on the energy spectrum and anisotropic distribution of two electron states in a quantum ring in the presence of Rashba spin-orbit interaction (RSOI) and Dresselhaus SOI (DSOI) is investigated in the presence of a perpendicular magnetic field. We find that the interplay between the RSOI and DSOI makes the single quantum ring behaves like a laterally coupled quantum dot and the interdot coupling can be tuned by changing the strengths of the SOIs. The interplay can lead to singlet-triplet state mixing and anticrossing behavior when the singlet and triplet states meet with increasing magnetic field. The two electron ground state displays a bar-bell-like spatial anisotropic distribution in a quantum ring at a specific crystallographic direction, i.e., [110] or [1 (1) over bar0], which can be switched by reversing the direction of the perpendicular electric field. The ground state exhibits a singlet-triplet state transition with increasing magnetic field and strengths of RSOI and DSOI. An anisotropic electron distribution is predicted which can be detected through the measurement of its optical properties.

Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry

We propose a simple method to detect the relative strength of Rashba and Dresselhaus spin-orbit interactions in quantum wells (QWs) without relying on the directional-dependent physical quantities. This method utilizes the two different critical gate voltages that leading to the remarkable signals of SU(2) symmetry, which happens to reflect the intrinsic-structure-inversion asymmetry of the QW. We support our proposal by the numerical calculation of in-plane relaxation times based on the self-consistent eight-band Kane model. We find that the two different critical gate voltages leading to the maximum spin-relaxation times [one effect of the SU(2) symmetry] can simply determine the ratio of the coefficients of Rashba and Dresselhaus terms. Our proposal can also be generalized to extract the relative strengths of the spin-orbit interactions in quantum-wire and quantum-dot structures.

Quantum tunneling through planar p-n junctions in HgTe quantum wells

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI.

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.