108 resultados para FPGA device
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中科院部博士资助基金项目( 0929361213) 资助
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中科院“西部博士资助基金”(0929361213)
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论文介绍了基于DSP和FPGA主环电源控制系统的设计。DSP与DAC之间通过FPGA连接,并通过FPGA来控制DAC的输出。重点介绍FPGA的程序设计及其仿真结果。系统达到了设计要求,已成功应用于CSR主环控制系统。
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本文论述了用于兰州重离子加速器冷却储存环(HIRFL-CSR)前端控制系统的总线控制器的FPGA设计及其基于ARM-Linux下的驱动程序设计。该总线控制器采用Altera公司的ACEX系列中的EP1K30实现,通过VME总线背板同其它VME设备(CPLD)通信,可读VME设备数据,监视电源运行状况,也可向VME设备发送命令和写数据,并且能够响应VME设备中断,读中断数据。为了能够通过AT91RM9200控制器访问VME总线控制器,必须为其编写相应的驱动程序。驱动程序定义了应用程序调用接口和数据格式,并实现了中断机制、多进程访问和数据的突发(burst)读写。
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A full-ring PET insert device should be able to enhance the image resolution of existing small-animal PET scanners. Methods: The device consists of 18 high-resolution PET detectors in a cylindric enclosure. Each detector contains a cerium-doped lutetium oxyorthosilicate array (12 x 12 crystals, 0.72 x 1.51 x 3.75 mm each) coupled to a position-sensitive photomultiplier tube via an optical fiber bundle made of 8 x 16 square multiclad fibers. Signals from the insert detectors are connected to the scanner through the electronics of the disabled first ring of detectors, which permits coincidence detection between the 2 systems. Energy resolution of a detector was measured using a Ge-68 point source, and a calibrated 68Ge point source stepped across the axial field of view (FOV) provided the sensitivity profile of the system. A Na-22 point source imaged at different offsets from the center characterized the in-plane resolution of the insert system. Imaging was then performed with a Derenzo phantom filled with 19.5 MBq of F-18-fluoride and imaged for 2 h; a 24.3-g mouse injected with 129.5 MBq of F-18-fluoride and imaged in 5 bed positions at 3.5 h after injection; and a 22.8-g mouse injected with 14.3 MBq of F-18-FDG and imaged for 2 h with electrocardiogram gating. Results: The energy resolution of a typical detector module at 511 keV is 19.0% +/- 3.1 %. The peak sensitivity of the system is approximately 2.67%. The image resolution of the system ranges from 1.0- to 1.8-mm full width at half maximum near the center of the FOV, depending on the type of coincidence events used for image reconstruction. Derenzo phantom and mouse bone images showed significant improvement in transaxial image resolution using the insert device. Mouse heart images demonstrated the gated imaging capability of the device. Conclusion: We have built a prototype full-ring insert device for a small-animal PET scanner to provide higher-resolution PET images within a reduced imaging FOV. Development of additional correction techniques are needed to achieve quantitative imaging with such an insert.
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With the construction of the neutron detection wall at the external target position on Heavy Ion Research Facility in Lanzhou-Cooling Storage Ring (HIRFL-CSR), it will be possible to detect high energy neutron. A BUU model is applied to simulate the flow in both symmetric (Ni+Ni, Pb+Pb) and asymmetric(Pb+Ni) systems. It is shown that at above several hundreds MeV/u, the flow signals are very obvious and depend clearly on the centrality of the collisions. Based on the products in the forward angle less than 20 degrees, the simulation also reveals that the determination of the reaction plane and the selection of the impact parameter, both of which are essential in the flow measurement, are well implemented. The double event and its influence on the determination of the neutron flow are also simulated.
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详细描述了基于FPGA方案的数字电源调节器。首先介绍了数字调节器的硬件功能模块设计,重点对用于采样电源输出电流的高速高精度AD7634的工作原理做了描述,并给出了AD7634采集一个电压信号的工作波形;其次介绍了数字调节器的软件设计,包括调节器算法、功能以及在FPGA内的实现方法;最后,以一台15 A/15 V校正磁铁电源为样机,进行了闭环调节实验,给出了测试结果。
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CSR高频控制系统需要对高频正弦波激励信号的幅度、相位、频率进行稳定控制。相位arctan(Q/I)求解是必不可少的模块。论述了一种新的基于FPGA平台和对称查找表法(SBTM)的求解相位arctan(Q/I)的方法,做了详细的理论分析,给出了具体实现的代码和结果。该模块精度高,消耗资源少,可直接应用于CSR高频控制系统。
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A comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole.