Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

Study on the localization of the electric dipole sources

The research of dipole source localization has great significance in both clinical research and applications. For example, the EEG recording from the scalp is widely used for the localization of sources of electrical activity in the brain. This paper presents a closed formula that describes the electric field of dipoles at arbitrary position, which is a linear transformer called the transfer matrix. The expression of transfer matrix and its many useful characteristics are given, which can be used for the analysis of the electrical fields of dipoles. This paper also presents the closed formula for determining the location and magnitude of single dipole or multi-dipoles according to its electrical field distribution. A calculation result for a single dipole shows that the dipole will be located at the midpoint of a line segment if there are equivalent fields at its two ends.

Super-FRS超导磁体失超瞬态热应力分析；Quench transient thermal stress analysis of super-FRS dipoles

国际反质子与离子大科学工程(FAIR)项目是一个大型的国际合作项目,其中Super-FRS超导二极磁体由中国科学院近代物理研究所研制。利用ADINA有限元程序对项目中的超导Super-FRS磁体线圈的失超过程进行了模拟分析。利用C程序对ADINA程序进行二次开发以便对有限元求解器的调用和载荷的控制。分析结果显示:在失超过程中产生的最大热应力为26 MPa,可能产生的声波频率在35 Hz左右。

Dynamic Measurement System for Dipoles of RCS for CS

A dynamic measurement system was developed by the Institute of Modern Physics (IMP) for the dipole prototype of Rapid Cycle Synchrotron (RCS) of China Spallation Neutron Source (CSNS). The repetition frequency of RCS is 25 Hz. The probe is a moving arc searching-coil, and the data acquisition system is based on the dynamic analysis modular of National Instrument. To get the error of high order harmonics of the field at basic frequency, the hardware integrator is replaced by a high speed ADC with software filter and integrator. A series of harmonic coefficients of field are used to express the varieties of dynamic fields in space and time simultaneously. The measurement system has been tested in Institute of High Energy Physics (IHEP), and the property of the dipole prototype of RCS has been measured. Some measurement results and the repeatability of system are illustrated in this paper.

Prototype of the Superferric Dipoles for the Super-FRS of the FAIR-Project

The FAIR China Group (FCG), consisting of the Institute of Modern Physics (IMP Lanzhou), the Institute of Plasma Physics (ASIPP, Hefei) and the Institute of Electric Engineering (IEE, Beijing) developed and manufactured in cooperation with GSI, Germany a prototype of a superferric dipole for the Super-Fragment-Separator of the FAIR-project [1]. The dipole magnets of the separator will have a deflection radius of 12.5 m, a field up to 1.6 T, a gap of at least 170 mm and an effective length of more than 2 meters to bend ion beams with a rigidity from 2 T . m up to 20 T . m. The magnets operate at DC mode. These requirements led to a superferric design with a yoke weight of more than 50 tons and a maximum stored energy of more than 400 kJ. The principles of yoke, coil and cryostat construction will be presented. We will also show first results of tests and measurements realized at ASIPP and at IMP.

Calibration of standard seawater in electrical conductivity

The procedure adopted by the Standard Seawater Service for the calibration of Standard Seawater in electrical conductivity relative to a defined potassium chloride solution is described

Structural characterization, stability and electrical properties of strontium niobate ceramic

The double perovskite oxide Sr2CrNbO6 has a cubic structure according to powder X-ray diffraction. After reducing in CO, Sr2CrNbO6 still exhibited a cubic structure refined by Rietveld technique. The TG analysis indicated that Sr2CrNbO6 loses 0.127 oxygen per formula unit from 400 to 700 degrees C in H-2. The morphology and compositions of this ceramic did not significantly change on reduction

Electrical instability in vanadyl-phthalocyanine thin-film transistors

We investigated the electrical instability of vanadyl-phthalocyanine (VOPc) thin-film transistors (TFTs) at various temperatures. The results demonstrate a slow threshold voltage shift in the bias stress process and a rapid recovery after the removal of bias stress, which indicates that a slower degradation process occurs in the on state while a faster removal in the off state of VOPc TFTs. The shift of threshold voltage comes from traps generated at the organic/dielectrics interface. Additionally, a relaxation time of 10(7) s was obtained at room temperature according to the stretched exponential model, which is comparable to a-Si: H TFTs. Therefore, VOPc TFTs are suitable to be applied in flat panel displays.

3D Fe3S4 flower-like microspheres: high-yield synthesis via a biomolecule-assisted solution approach, their electrical, magnetic and electrochemical hydrogen storage properties

Well-defined 3D Fe3S4 flower-like microspheres were synthesized via a simple biomolecule-assisted hydrothermal process for the first time. On the basis of a series of contrast experiments, the probable growth mechanism and fabrication process of the products were proposed. The electrical conductivity property of the as-synthesized Fe3S4 sample exhibited a rectifying characteristic when a forward bias was applied for the bottom-contacted device. The magnetic properties of the products were studied as well and the results demonstrated that the products presented ferromagnetic properties related to the corresponding microstructure. In addition, we first verified that the Fe3S4 flower-like microspheres could store hydrogen electrochemically, and a discharge capacity of 214 mA h g(-1) was measured without any activation under normal atmospheric conditions at room temperature.

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.