Mobility and profiles of polychlorinated dibenzo-p-dioxins and dibenzofurans in sediment of Ya-Er Lake, China

The sediment of Ya-Er Lake had been heavily polluted by polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/Fs) from the former chloralkali industry. The total amounts of PCDD/Fs and I-TEQ decreased along the water flow direction and also decreased from top to bottom layers of sediment cores. Sediment of Pond 1 was dominated by PCDF, especially TCDF. In contrast, in the other four ponds, PCDD dominated in all layers and octachlorinated dibenzo-p-dioxin (OCDD) predominated in all of the homologues. When homologue profiles from sediments and water samples were compared using principal component analysis (PCA), the first two principal components represented 95.2% of the variance in the data. The first component explained 75.9% of the variance and the second one 19.3%. Two clusters were most distinct, presenting a shift in PCDD/Fs composition from PCDF to heptachlorinated dibenzo-p-dioxin (HpCDD) and OCDD in sediments and water from Pond I to Ponds 2-5. The pattern variation between Pond 1 and Ponds 2-5 in Ya-Er Lake was most likely due to the change of process in the chemical plant after the dams between the ponds were built. The results of the present study also showed that log K-oc of PCDD/Fs calculated from data of sediment and water in the field were comparable with theoretical log K-oc. The results also implied that the concentrations of PCDD/Fs in water and sediments could be predicted from each other by log K-oc. (C) 2001 Elsevier Science Ltd. All rights reserved.

Persistence of polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/F) in Ya-Er Lake area, China

The concentrations of polychlorinayed dibenzo-p-dioxins and dibenzofurans (PCDD/F) in surface sediment, soil, human hair, acid fish muscle from Ya-Er Lake area, China, were analyzed. The results showed that there were very high concentrations of PCDD/F existing in these samples. The results also indicated that Ya-Er Lake, which received a large amount of waste water from a nearby chloroalkali plant, was heavily polluted by PCDD:F. The present study demonstrated that those congeners, which possess at least three chlorine atoms in the lateral position with a fourth chlorine atom in the neighborhood bond of the third single chlorine atom, such as 1,2,7,8-TCDF and 2,3.6,7-TCDF, were very resistant to biodegradation due to the "neighbor effect" of every two chlorine atoms. The present study suggested that human hair may be a suitable alternative bioindicator for detecting PCDD/F exposure. (C) 2001 Elsevier Science Ltd. All rights reserved.

Bioaccumulation of polychlorinated dibenzo-p-dioxins and dibenzofurans in the foodweb of Ya-Er Lake area, China

Bioaccumulation of PCDD/F in the foodweb was investigated in the Ya-Er Lake area, which was heavily polluted by PCDD/F. The high concentrations of PCDD/F in sediment can be transferred and bioaccumulated by aquatic organisms and humans through various pathways. Benthonic invertebrate animals and aquatic plants with a lot of fibers in the root can accumulate PCDD/F from sediment and water. Snail (Bellamya aeruginosa), shrimp (Macrobranchium sp.) and freshwater mussel (Acuticosta chinensis (Lea)) took up PCDD/F from the water and maintained the emission patterns, whereas fish tended to selectively accumulate 2,3,7,8-substituted isomers. The tissues of fish-eating bird and duck (Anas platyrhynchos) were very highly contaminated by PCDD/F due to ingestion of fish and other aquatic organisms from sediment. The residual concentration in breast milk depended on the original concentration of PCDD/F in the food. A resident in Ya-Er Lake area showed a daily intake of PCDD/ F of about 9.14 pg TEQ/kg body weight/day. This is higher than the tolerable daily intake (TDI) for PCDD/F (1 pg TEQ/kg body weight/day), which was recommended by the World Health Organization (WHO). (C) 2001 Elsevier Science Ltd. All rights reserved.

Polycyclic aromatic hydrocarbons in Ya-Er Lake (Hubei, China): sources and distribution

Sources and distribution of polycyclic aromatic hydrocarbons (PAH) in the Ya-Er Lake area (Hubei, China) sediment cores of 3 ponds in the shallow Ya-Er Lake were investigated for 16 PAH. Analytical procedure included extraction by ultrasonication, clean-up by gel-permeation and quantification by HPLC with fluorescence detection. The total PAH amount in sediment samples of the Ya-Er Lake ranged from 68 to 2242 mu g/kg. Concentrations decreased from pond 1 to pond 3 and from upper to lower sediment layers. In addition a soil sample from Ya-Er Lake area showed a total PAH amount of 58 mu g/kg. The PAH pattern in lower sediment layers were similar to that of the soil sample which indicates an atmospheric deposition into the sediments prior to 1970 only. The PAH profile of upper sediment samples, which differs completely from that of lower layers, may be explained by a gradually increasing input of mixed combustion and raw fuel sources since 1970. Therefore the origin of increased PAH contamination in Ya-Er Lake during the last 3 decades has been probably an industrial waste effluent in pond 1.

PCDD/F-s, PCBs, HCHs and HCB in sediments and soils of Ya-Er lake area in China: Results on residual levels and correlation to the organic carbon and particle size

Sediments and soils collected from the Ya-Er Lake area in China were analysed for the polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/Fs), polychlorinated biphenyl (PCBs), hexachlorocyclohexane (HCHs) and hexachlorobenzene (HCB). The results indicated the main pollution problems in the Ya-Er Lake area, which was heavily polluted by HCHs and chlorobenzenes, now is dominantly polluted by PCDD/Fs, PCBs and HCB. The occurrence of PCDD/Fs and PCBs with relatively high levels of HpCDDs, OCDD and low chlorinated-substituted PCBs, is attributed to the discharge of waste water and biodegradation. The vertical distributions of HCH-residues are related with the content of organic carbon and particle size. Copyright (C) 1996 Elsevier Science Ltd

Rapid bioassay as indicator of potentially harmful effects for dioxin-like compounds in sample of Ya-Er Lake, China: Requirements for clean-up and comparison to chemical analysis

A rapid bioassay was established measuring the extracts of wildlife samples which were taken from Ya-Er Lake area, China. In extracts of these samples containing PCDD/Fs and PCBs, bioassay and chemically derived TCDD-equivalents (TEQs) were nearly identical. Our results indicate this bioassay is an excellent complement to chemical residue analysis and a useful tool in understanding the complex interactions of halogenated hydrocarbons. However, it must be mentioned that the proper prior clean-up method is very important for using the bioassay.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Strong visible and infrared photoluminescence from Er-implanted silicon nitride films

Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.

Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN

Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm(-1) modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm(-1) peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm(-1) arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples. (C) 2004 American Institute of Physics.

Study of infrared luminescence from Er-implanted GaN films

In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.

Photoluminescence of Er-doped hydrogenated amorphous silicon nitride

Er photoluminescence (Er PL) and dangling bonds (DBs) of annealed Er-doped hydrogenated amorphous silicon nitride (a-SiN:H(Er)) with various concentrations of nitrogen are studied in the temperature range 62-300 K. Post-annealing process is employed to change the DBs density of a-SiN:H(Er). PL spectra, DBs density and H, N concentrations are measured. The intensity of Er PL displays complicated relation with Si DBs density within the annealing temperature range 200-500 degreesC. The intensity of Er PL first increases with decreasing density of Si dangling bonds owing to the structural relaxation up to 250 degreesC, and continues to increase up to 350 degreesC even though the density of Si DBs increases due to the improvement of symmetry environment of Er3+. (C) 2003 Elsevier B.V. All rights reserved.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.

Structure and magnetic properties of ScFe6Ga6-type RCo5Ga7 (R = Y, Tb, Dy, Ho and Er)

The structure and magnetic properties of the RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds with the ScFe6Ga6-type structure have been studied. The stability of RCo5Ga7 is closely related with the ratio of the metal radii R-RE/R-(Co,R-Ga). With R-RE/R-(Co,R-Ga) less than or equal to 1.36, the compounds can be stabilized in the ScFe6Ga6-type structure. The lattice of RCo5Ga7 shrinks as the atomic order of R increases, and it is consistent with the lanthanide contraction. The structure analysis based on X-ray diffraction patterns reveals that in the orthorhombic RCo5Ga7 (Immm), R occupies the 2a site, and Co enters into the 8k and the 4h sites, and Ga is at the 4e, 4f, 4g, 4h and 8k sites. The interatomic distances and the coordination numbers of RCo5Ga7 are provided from the refinement results. The short interatomic distance (less than 2.480 Angstrom) between the Co ions results in the negative magnetic interaction, which does not favor ferromagnetic ordering. The magnetic moment of YCo5Ga7 is absent, and RCo5Ga7 (R = Tb, Dy, Ho and Er) may have long-range magnetic ordering with the paramagnetic Curie temperature lower than 5 K. (C) 2004 Elsevier Inc. All rights reserved.