Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

纳米水基磁性液体在肿瘤治疗领域的研究进展

结合作者在纳米磁性液体方面的研究经历，介绍了生物医学应用领域纳米磁性粒子的组成结构及特点，指出高分子改性纳米磁性粒子具有生物相容性好、稳定性强、载药量高的优点，并对目前高分子改性纳米四氧化三铁颗粒的制备方法及特点进行了对比分析。指出进一步研制磁响应性强、载药量高、粒度分布均匀的纳米磁性粒子，使之对癌细胞具有亲和作用，尽量避免对毛细血管网状内皮系统的清除，是未来肿瘤治疗领域纳米磁性粒子的研发目标，并对目前制备方法中存在的不足提出了改进的建议。

Influence of 5A-Type Zeolite Powder on Tetrahydrofuran Hydrate Formation and Dissociation Process

Visual observations of tetrahydrofuran (THF) hydrate formation and dissociation processes with 5A-type zeolite powder were made at normal atmospheric conditions and below zero temperature by microscope. Results indicate that 5A-type zeolite powder can promote THF hydrate growth. At the same time, in the presence of 5A-type zeolite, agglomerated crystals and vein-like crystals of THF hydrate were also formed. SA-type zeolite powder increases the crystallization temperature and decreases the dissociation temperature. The particle size distribution of 5A-type zeolite powder influences THF hydrate formation and its dissociation characteristics significantly.

激光衍射法与吸管法对东北黑土区土壤粒径分布测定的差异性研究

目前激光衍射法(laser diffraction method,LD)逐步被用于土壤颗粒粒径分布(particle size distribution, PSD)的分析,为了对比LD法和吸管法测定东北黑土区土壤PSD的差异性,采用LD法和吸管法分别对东北黑土区宾州河流域36个土壤剖面不同层次178个土壤样品的PSD值进行了测定与分析。结果表明,同吸管法相比,LD法低估了土壤的黏粒含量,平均低估幅度19.69%,而高估了土壤的粉粒和砂粒含量,平均高估幅度分别为14.66%和5.13%。LD法所得PSD结果依据美国土壤质地分类制判定的土壤质地,相对于吸管法总体由粉黏质偏向粉砂质方向。建立了LD法与吸管法测定PSD结果的转换模型,将LD法测定的PSD结果利用转换模型校正后,其测定的各土壤粒级同吸管法相比,准确度达96.97%～98.71%,判定土壤质地的准确率也达83.15%。

两种土壤水分特征曲线间接推求方法对黄土的适应性评价

土壤水分特征曲线(SWCC)是模拟土壤水分运动和溶质运移的一个重要参数,利用土壤的基本物理性质来间接推求SWCC的方法已经成为当今土壤物理学领域的研究热点。为了比较两种SWCC间接推求方法——Arya-Paris物理经验方法(简称AP方法)和Tyler-Wheatcraft分形几何方法(简称TW方法)对黄土的适应性,该文分析了黄土高原296组土壤颗粒分布、容重和水分特征曲线等资料,利用简化的Fredlund(Fred3P)模型模拟得到连续的土壤颗粒分布曲线,然后应用AP和TW方法预测出相应吸力下的土壤含水量。研究结果表明,对于黄土性土壤,AP和TW两种方法的预测结果均达到了一定的精度,相比较而言AP方法的预测效果明显优于TW方法,且受质地影响小。

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.