154 resultados para Directional patterns (antenna)


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The graphite electrode sludge was sampled from a huge chloralkali plant in central China. The total level of PCDD/F was found as high as 378.85 mu g/kg sludge (dry weight). The patterns of PCDD/F in each homologue indicated the predominance of tetra- to octa-chlorinated PCDFs, Furthermore, the toxic 2,3,7,8-substituted PCDFs constituted over 80% of the total PCDFs in the sludge and the corresponding PCDDs were only at 15 mu g/kg level. The calculated value of the international toxic equivalence (I-TEQ) in sludge was 21.65 mu g/kg sludge (dry weight). This typical "dioxin chloralkali pattern" was apparently identified in the sediments near the effluent outlet of the chloralkali plant.

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Feeding intensities (number of bites per minute) were recorded each hour over a 24-h diel cycle for young grass carp fed three diets. The grass carp did not show distinct meals. Grass carp receiving plant diets (duckweed or elodea) fed almost continuously throughout the 24 h, while fish fed the animal diet (tubificids) ceased feeding or had very low feeding intensities for about a quarter of the diel cycle. The average feeding intensity in fish fed duckweed was three times higher than that in fish fed elodea and tubificids. Average dry matter intake per bite was much higher in fish fed the animal diet than in those fed the plant diets. In most individuals, there was no significant difference in feeding intensity between daytime and nighttime.

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InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mu m-side square microlaser with a 2-mu m-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0 X 10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA. (C) 2008 Optical Society of America

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In this paper a compact polarization beam splitter based on a deformed photonic crystal directional coupler is designed and simulated. The transverse-electric (TE) guided mode and transverse-magnetic (TM) guided mode are split due to different guiding mechanisms. The effect of the shape deformation of the air holes on the coupler is studied. It discovered that the coupling strength of the coupled waveguides is strongly enhanced by introducing elliptical airholes, which reduce the device length to less than 18.5 mu m. A finite-difference time-domain simulation is performed to evaluate the performance of the device, and the extinction ratios for both TE and TM polarized light are higher than 20 dB.

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A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

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A novel Y-branch based monolithic transceiver with a superluminescent diode and a waveguide photodiode (Y-SDL-PD) is designed and fabricated by the method of bundle integrated waveguide (BIG) as the scheme for monolithic integration and angled Y-branch as the passive bi-directional waveguide. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10mW at 120mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than 1 dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x 8 degrees, resulting in good fibre coupling.

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Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

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This work discusses the fabrication of two-dimensional photonic crystal mask layer patterns. Photonic crystal patterns having holes with smooth and straight sidewalls are achieved by optimizing electron beam exposure doses during electron beam lithography process. Thereafter, to precisely transfer the patterns from the beam resist to the SiO2 mask layer, we developed a pulse-time etching method and optimize various reaction ion etching conditions. Results show that we can obtain high quality two-dimensional photonic crystal mask layer patterns.

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Mode characteristics for equilateral triangles, squares, and hexagonal resonators with a center hole are numerically simulated by the finite-different time domain (FDTD) technique. The center hole does not break the symmetry behavior of the original resonators and can result in modification of the mode field patterns and mode Q factors. In an equilateral triangle resonator the center hole can suppress the symmetry state of degenerate states with the merit of single mode operation. In a square resonator, the Q factor can be enhanced for some modes with a suitable size of the hole. For a hexagonal resonator with a side length of 1 mu m and a refractive index of 3.2, the mode Q factors first gradually decrease with the increase of the hole diameter for modes at a wavelength of about 1500 nm, then the modes transform to that of a microdisk with a jump of the mode wavelength as the hole diameter approaches 0.7 mu m. Finally, the mode Q factors greatly enhance as the hole diameter reaches about 1 mu m. The results indicate that the center hole can greatly modify mode characteristics, especially that of the mode Q factor. (C) 2009 Optical Society of America

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Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.

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Based on silicon-on-insulator (SOI) technology, a Mach-Zehnder interferometer (MZI) is fabricated, in which two directional couplers serve as power splitter and combiner. The free carrier plasma dispersion effect of Si is adopted to achieve the phase modulation and the consequent intensity modulation of optical fields. The device presents an insertion loss of 2.61 dB and an extinction ratio of 19.6 dB. The rise time and fall time are 676 ns and 552 ns, respectively. Detailed analysis and explanation of the performance behaviors are also presented. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

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A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

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Three-dimensional GaN pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (MOVPE) technique. The dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. The GaN structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. Cathodoluminescence (CL) measurement was carried our. on the hexagonal pyramid at low temperature. Two distinct spectra were observed to occur at about 359 and 329 nm. The higher energy is thought to be related to GaN dot, and the lower one is due to GaN dot band edge emission. The intensities of the two spectra were investigated as a function of temperature in the range of 135-150 K. (C) 2000 Published by Elsevier Science B.V.

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We have used Deep Level Transient Spectroscopy to investigate self-organized InAs/GaAs quantum dots. The existence of different dot families is confirmed by the deconvolution of the spectra in Gaussian components with full width at half maximum of 60-70meV. The strain of quantum dots is responsible for the relaxation of large quantum dots leading to generation of dislocations. (C) 1998 Academic Press.