Evidence of multimodal patterns of self-organized quantum dots


Autoria(s): Chen F; Feng SL; Zhao Q; Wang ZR
Data(s)

1998

Resumo

We have used Deep Level Transient Spectroscopy to investigate self-organized InAs/GaAs quantum dots. The existence of different dot families is confirmed by the deconvolution of the spectra in Gaussian components with full width at half maximum of 60-70meV. The strain of quantum dots is responsible for the relaxation of large quantum dots leading to generation of dislocations. (C) 1998 Academic Press.

Identificador

http://ir.semi.ac.cn/handle/172111/13054

http://www.irgrid.ac.cn/handle/1471x/65497

Idioma(s)

英语

Fonte

Chen F; Feng SL; Zhao Q; Wang ZR .Evidence of multimodal patterns of self-organized quantum dots ,SUPERLATTICES AND MICROSTRUCTURES,1998,24(5):353-357

Palavras-Chave #半导体物理 #DLTS #quantum dots #GaAs/InAs #CARRIER RELAXATION #ENERGY-LEVELS #SPECTROSCOPY #TRANSITION #GROWTH #ELECTRONIC-STRUCTURE
Tipo

期刊论文