Selective control of toxic Microcystis water blooms using lysine and malonic acid: An enclosure experiment

Three enclosures (10 x 10 x 1.5-1.3 m in depth) were set beside Dianch Lake, Kunming, People's Republic of China, for the period from July 28 to August 26, 2002. The enclosures were filled with cyanobacterial (Microcystis aeruginosa) water bloom-containing lake water. Lake sediment that contained macrophytes and water chestnut seeds was spread over the entire bottom of each enclosure. Initially, 10 g/m(2) of lysine was sprayed in Enclosure B, and 10 g/m(2) each of lysine and malonic acid were sprayed together in Enclosure C. Enclosure A remained untreated and was used as a control. The concentrations of lysine, malonic acid, chlorophyll a, and microcystin as well as the cell numbers of phytoplankton such as cyanobacteria, diatom, and euglena were monitored. On day 1 of the treatment, formation of cyanobacterial blooms almost ceased in Enclosures B and C, although Microcystis cells in the control still formed blooms. On day 7 Microcystis cells in Enclosure B that had been treated with lysine started growing again, whereas growth was not observed in Microcystis cells in Enclosure C, which had been treated with lysine and malonic acid. On day 28 the surface of Enclosure B was covered with water chestnut (Trapa spp.) and the Microcystis blooms again increased. In contrast, growth of macrophytes (Myriophllum spicatum and Potamogeton crispus) was observed in Enclosure C; however, no cyanobacterial blooms were observed. Lysine and malonic acid had completely decomposed. The microcystin concentration on day 28 decreased to 25% of the initial value, and the pH shifted from the initial value of 9.2 to 7.8. We concluded that combined treatment with lysine and malonic acid selectively controlled toxic Microcystis water blooms and induced the growth of macrophytes. (c) 2005 Wiley Periodicals, Inc.

Growth and antioxidant system of the cyanobacterium Synechococcus elongatus in response to microcystin-RR

Microcystins, one type of the cyanobacterial toxins, show a broad range of hazardous effects on other organisms. Most of the researches on the toxic effects of microcystins have involved in animals and higher plants. Little work, however, has been done on evaluating the mechanisms of microcystin toxicity on algae. In this study, the toxicological effects of microcystin-RR (MC-RR) on the cyanobacterium Synechococcus elongatus were investigated. For this purpose, six physio-biochemical parameters (cell optical density, reactive oxygen species (ROS), malondialdehyde (MDA), glutathione (GSH), glutathione peroxidase (GSH-Px) and glutathione S-transferase (GST)) were tested in algal cells when exposed to 100 mug(-1) microcystin-RR. The results showed that the growth of Synechococcus elongatus ( expressed as optical density) was significantly inhibited compared with the control. At the same time, the treated algae exhibited a pronounced increase in production of ROS and MDA after 6 days exposure to microcystin-RR. Signi. cant changes in GSH levels and GSH-Px, GSH activities were also detected in algal cells, with higher values being observed in the toxin treated algae after 6 days exposure. GST activities in the treated algae exhibited a decline after exposure and rapid augmentation on day 3, thereafter, they kept at a high level when compared to the control group. GSH contents and GSH-Px activities were also significantly raised in the toxin-treated algae cells from day 3, but they showed a sharp decrease on day 4, which was the onward of cell proliferation. These results suggested that oxidative stress manifested by elevated ROS levels and MDA contents might be responsible for the toxicity of microcystin to Synechococcus elongatus and the algal cells could improve their antioxidant ability through the enhancement of enzymatic and non-enzymatic preventive substances.

Reactive oxygen species and antioxidant enzymes activity of Anabaena sp PCC 7120 (Cyanobacterium) under simulated microgravity

It was found that reactive oxygen species in Anabaena cells increased under simulated microgravity provided by clinostat. Activities of intracellular antioxidant enzymes, such as superoxide dismutase, catalase were higher than those in the controlled samples during the 7 days' experiment. However, the contents of gluathione, an intracellular antioxidant, decreased in comparison with the controlled samples. The results suggested that microgravity provided by clinostat might break the oxidative/antioxidative balance. It indicated a protective mechanism in algal cells, that the total antioxidant system activity increased, which might play an important role for algal cells to adapt the environmental stress of microgravity. (C) 2004 Elsevier Ltd. All rights reserved.

Retroposon analysis of major cetacean lineages: The monophyly of toothed whales and the paraphyly of river dolphins

SINE (short interspersed element) insertion analysis elucidates contentious aspects in the phylogeny of toothed whales and dolphins (Odontoceti), especially river dolphins. Here, we characterize 25 informative SINEs inserted into unique genomic loci during evolution of odontocetes to construct a cladogram. and determine a total of 2.8 kb per taxon of the flanking sequences of these SINE loci to estimate divergence times among lineages. We demonstrate that: (i) Odontocetes are monophyletic; (ii) Ganges River dolphins, beaked whales, and ocean dolphins diverged (in this order) after sperm whales; (iii) three other river dolphin taxa, namely the Amazon, La Plata, and Yangtze river dolphins, form a monophyletic group with Yangtze River dolphins being the most basal; and (iv) the rapid radiation of extant cetacean lineages occurred some 28-33 million years B.P., in strong accord with the fossil record. The combination of SINE and flanking sequence analysis suggests a topology and set of divergence times for odontocete relationships, offering alternative explanations for several long-standing problems in cetacean evolution.

Whistles of boto, Inia geoffrensis, and tucuxi, Sotalia fluviatilis

Whistles were recorded and analyzed from free-ranging single or mixed species groups of boto and tucuxi in the Peruvian Amazon, with sonograms presented. Analysis revealed whistles recorded falling into two discrete groups: a low-frequency group with maximum frequency below 5 kHz, and a high-frequency group with maximum frequencies above 8 kHz and usually above 10 kHz. Whistles in the two groups differed significantly in all five measured variables (beginning frequency, end frequency, minimum frequency, maximum frequency, and duration). Comparisons with Published details of whistles by other platanistoid river dolphins and by oceanic dolphins suggest that the low-frequency whistles were produced by boto, the high-frequency whistles by tucuxi. Tape recordings obtained on three occasions when only one species was present tentatively support this conclusion, but it is emphasized that this is based on few data. (C) 2001 Acoustical Society of America.

Strong visible and infrared photoluminescence from Er-implanted silicon nitride films

Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.

Synthesis and photoluminescence, field emission properties of stalactite-like ZnS-ZnO composite nanostructures

Wurtzite stalactite-like quasi-one-dimensional ZnS nanoarrays with ZnO protuberances were synthesized through a thermal evaporation route. The structure and morphology of the samples are studied and the growth mechanism is discussed. X-ray diffraction (XRD) results show both the ZnS stem and the ZnO protuberances have wurtzite structure and show preferred [001] oriented growth. The photoluminescence and field emission properties have also been investigated. Room temperature photoluminescence result shows it has a strong green light emission, which has potential application for green light emitter. Experimental results also show that the stalactite arrays have a good field emission property, with turn-on field of 11.4 V/mu m, and threshold field of 16 V/mu m. The ZnO protuberances on the ZnS stem might enhance the field emission notably.

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.

Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers

We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 mu m in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.

Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55 mu m: physics, design and simulation

We have studied the optical matching layers (OMLs) and external quantum efficiency in the evanescent coupling photodiodes (ECPDs) integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method (BPM). The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30 mu m could absorb 90% of the incident light at 1.55 mu m wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.

Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells

A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Structure and photoluminescence studies of Pr-implanted GaN

The structure and photoluminscence (PL) properties of Pr-implanted GaN thin films have been studied. RBS/channeling technique was used to explore the damage recovery at high annealing temperature and study the dependence of the radiation damage with ion implantation direction. A complete recovery of the ion implantation damage cannot be achieved at annealing temperatures up to 1050degreesC. It is found that the channeling implantation results in the decrease of the damage. The PL experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050degreesC. Moreover, the PL intensity is also seriously affected by ion implantation geometries. The PL intensity for the sample implanted along channeled direction is nearly 2 times more intense than that observed from the sample implanted along random direction. The thermal quenching of PL intensity from 10 to 300K for sample annealed at 1050degreesC is only 30%. (C) 2004 Elsevier B.V. All rights reserved.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO2 matrix is reported. The PL spectra consist of three Gaussian bands (peaks A,B, and C), originated from the quantum confinement effect of Si NCs, the interface state effect between a Si NC and a SiO2 matrix, and the localized state transitions of amorphous Si clusters, respectively. The size and the surface chemistry of Si NCs are two major factors affecting the transition of the dominant PL origin from the quantum confinement effect to the interface state recombination. The larger the size of Si NCs and the higher the interface state density (in particular, Si = O bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with Qin's prediction in Qin and Li [Phys. Rev. B 68, 85309 (2003)]. The realistic model of Si NCs embedded in a SiO2 matrix provides a firm theoretical support to explain the transition trend.

Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions

Zn2SiO4:Mn2+, Zn2SiO4:Eu3+ and Zn2SiO4:Mn2+ Eu3+ phosphors were prepared by a sol-gel process and their luminescence spectra were investigated. The emission bands from intra-ion transitions of Mn2+ and Eu3+ samples were studied as a function of pressure. The pressure coefficient of Mn2+ emission was found to be -25.3 +/- 0.5 and -28.5 +/- 0.9 meV/GPa for Zn2SiO4:Mn2+ and Zn2SiO4:Mn2+ Eu3+, respectively. The Eu3+ emission shows only weak pressure dependence. The pressure dependences of the Mn2+ and Eu3+ emissions in Zn2SiO4:Mn2+ Eu3+ are slightly different from that in Zn2SiO4:Mn2+ and Zn2SiO4:Eu3+ samples, which can be attributed to the co-doping of Mn2+ and Eu3+ ions. The Mn2+ emission in the two samples, however, exhibits analogous temperature dependence and similar luminescence lifetimes, indicating no energy transfer from Mn2+ to Eu3+ occurs. (c) 2005 Elsevier B.V. All rights reserved.

High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array

State-filling effects of the exciton in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array are observed by quantum dot array photolumineseence at a sample temperature of 77 K. The exciton emission at low excitation density is dominated by the radiative recombination of the states in the s shell and at high excitation density the emission mainly results from the radiative recombination of the exciton state in the p shell. The spectral interval between the states in the s and p shells is about 30-40 mcV. The time resolved photoluminescence shows that the decay time of exciton states in the p shell is longer than that of exciton states in the s shell, and the emission intensity of the exciton state in the p shell is superlinearly dependent on excitation density. Furthermore, electron-hole liquid in the quantum dot array is observed at 77 K, which is a much higher temperature than that in bulk. The emission peak of the. recombination, of electron-hole liquid has an about 200 meV redshift from the exciton fluorescence. Two excitation density-dependent emission peaks at 1.56 and 1.59 eV are observed, respectively, which result from quantum confinement effects in QDs. The emission intensity of electron-hole liquid is directly proportional to the cubic of excitation densities and its decay time decreases significantly at the high excitation density.