115 resultados para DM FC


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Effects of water temperature (17, 21, 25, 30 and 35 degrees C) and body size (14.75-281.41 g initial body weight) on food consumption, growth, feed conversion, and dry matter content in orange-spotted grouper fed to satiation were investigated. The combined effect of temperature (T, degrees C) and body weight (W, g) on maximum food consumption (C-max, g/day) was described as: InCmax= -7.411+0.828 lnW+0.317T-0.004 7T(2), and the optimum feeding temperature was 33.9 degrees C. The combined effect of temperature and body weight on growth (G) was described as: InG= -4.461-0.208lnW+0.394T-0.006 3T(2). The optimum growth temperature was 31.4 degrees C, whereas overall growth rates were high at 25, 30 and 35 degrees C. Feed conversion efficiencies (FCE, %), increasing first and then decreasing with increasing temperature, averaged from 1.8 to 2.1 in terms of dry weight of food fish. The optimum temperature for FCE tended to be lower than that for growth or feeding. Dry matter content increased with both increasing water temperature (17, 25, 30 and 35 degrees C) and body weight, and the combined effect of temperature and body weight on dry matter content (DM, %) was described as: lnDM =3.232+0.01 4 lnW-0.004 4T+0.001 2TlnW.

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We used polyurethane foam units (PFUs) to collect persistent organic pollutants (POPs) from four sites in Baiyangdian Lake in July 2003. Following extraction from the PFUs, relative concentrations of seven organochlorine pesticides (OCPs) and ten polychlorinated biphenyls (PCBs) were determined by gas chromatography. OCPs and PCBs were detected in the microbial communities from all the four sampling stations. In terms of the total concentration of POPs (OCPs+ PCBs), two river estuary stations had more POP (18.45 mu g/L and 9.77 mu g/L) than the two mid-lake stations (4.75 mu g/L and 5.21 mu g/L), indicating that Baiyangdian Lake was significantly impacted by inflow from the Fu River and Baigou River.

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The sex-determining gene Mab-3 of C. elegans and the doublesex gene of Drosophila each contain a common DM domain and share a similar role. Human doublesex-related gene DMRT1 also encodes a conserved DM-related DNA-binding domain. We present here the amplification of a broad range of DM domain sequences from three fish species using degenerate PCR. Our results reveal unexpected complexity of the DM domain gene family in vertebrates. (C) 2002 Wiley-Liss, Inc.

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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

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We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.

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The Berry phase of a bipartite system described by a Heisenberg XXZ model driven by a one-site magnetic field is investigated. The effect of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the Berry phase is discussed. It is found that the DM interaction affects the Berry phase monotonously. and can also cause sudden change of the Berry phase for some weak magnetic field cases. (c) 2008 Elsevier B.V. All rights reserved.

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We measured the wear resistances of alumina, alumina/silicon carbide composite and alumina/mullite composite by abrasive wear. And we studied the influence of fracture mode and worn surface pullout on wear resistance. The results are as follows: the main wear mechanisms of alumina and alumina/silicon carbide were fracture wear and plastic wear respectively, and for alumina/mullite composite, fracture wear and plastic wear mechanisms worked together. The wear resistance of the alumina/silicon carbide composite and the alumina/mullite composite was better by a factor of 1 similar to 3 than that of the monolithic alumina. There were two main reasons for the better wear resistance, i.e., the improved mechanical properties and the more smooth worn surfaces. However, The primary reason was the reduction of area fraction of pullout on the worn surfaces induced by fracture mode transition. (C) 2007 Published by Elsevier B.V.

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Alumina and alumina/mullite composites with mullite content of 0.96-8.72 vol.% were subjected to an abrasive wear test under loads of 0.1-2.0 N with a ball-on-disc apparatus. The wear rate and area fraction of pullout f(po) on the worn surfaces were measured. The wear resistances of the alumina/mullite composites were better by a factor of 1-2 than that of pure alumina. The main wear mechanism of alumina is fracture wear, and for alumina/mullite composites, fracture wear and plastic wear mechanisms work together. The influence of mechanical properties on wear resistance was estimated by Evans' method. It was found that the wear rate depends on f(po), and the primary reason for the better wear resistance of alumina/mullite composites is the reduction off, induced by fracture mode transition. (c) 2007 Elsevier B.V. All rights reserved.

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We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of the Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain an optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and the unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed. Copyright (C) EPLA, 2009

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We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.

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We study the effects of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the ground-state properties of the Heisenberg XY spin chain by means of the fidelity susceptibility, order parameter, and entanglement entropy. Our results show that the DM interaction could influence the distribution of the regions of quantum phase transitions and cause different critical regions in the XY spin model. Meanwhile, the DM interaction has effective influence on the degree of entanglement of the system and could be used to increase the entanglement of the spin system.

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The YCo5.0-xMnxGa7.0 compounds crystallize with the ScFe6Ga6-type structure. The lattice of YCo5.0-xMnxGa7.0 expands with the increase of the Mn content for 0.05 <= x <= 2.5, but the lattice of YCo2.0Mn3.0Ga7.0 shrinks compared with YCo2.5Mn2.5Ga7.0. The shrinkage of the lattice is attributed to the magnetostriction of YCo2.0Mn3.0Ga7.0. The substitution of Mn for Co forms magnetic clusters in the antiferromagnetic matrix. The magnetic frustration results in the spin-glass-like behavior for 0.8 <= x <= 1.5 and the difference between zero-field-cooling (ZFC) and field-cooling (FC) magnetizations for x = 2.0, 2.5, and 3.0. A stable long-range magnetic ordering appears among the Mn-centered magnetic clusters with the ordering temperature 110 K for x = 2.0. The hump in the thermomagnetization of YCo3.0Mn2.0Ga7.0 can be attributed to the competitive effects between the thermal fluctuation and the enhanced magnetic interaction. Both the hump and the bifurcation between the ZFC and the FC magnetizations of YCo3.0Mn2.0Ga7.0 occur at lower temperatures as the applied field increases. On the two-step magnetization curve of YCo3.0Mn2.0Ga7.0, the inflection point at 4000 Oe is due to the coercive field, and the magnetic moments in the clusters are tilted to the applied field above 4000 Oe. The magnetic ordering temperature is further increased to 210 K for x = 2.5 and to 282 K for x = 3.0. The spontaneous magnetization of YCo2.0Mn3.0Ga7.0 is 0.575 mu B/f.u. at 5 K with a canted magnetic structure.

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The SnO2 material prepared by sol-gel method was modified by thiourea solution in different concentrations (0.05, 0.1 and 0.2 mol dm(-3)). Then the structure and the average grain size of the SnO2 material were investigated by X-ray power diffraction. In order to understand the nature of the species on the SnO2 surfaces, the thermal gravimetric and differential thermal analyzer (TG-DTA) and IR spectra of these modified and unmodified sample were taken. The result indicates that the stability of oxygen adsorbed on thiourea-modified surface was improved and the amount of surface hydroxyl groups adsorbed on this grain surface was decreased. The thiourea adsorbed on SnO2 grain surface is translated to SO42- after sintered at 600 degrees C. SO42- species stabilize the resistance of the SnO2 sensor. (c) 2005 Elsevier B.V. All rights reserved.

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The SWAP operation in a two-qubit Heisenberg model in the presence of Dzyaloshinskii-Moriya (DM) anisotropic antisymmetric interaction is investigated. 1t is shown that the SWAP operation can be implemented for some kinds of DM coupling and the influence of DM couplings is divided into different cases. The conditions of the DM coupling under which the SWAP operation is feasible are established. (C) 2007 Elsevier B.V. All rights reserved.

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The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.