Spin states and persistent currents in mesoscopic rings: Spin-orbit interactions

We investigate theoretically electron spin states in one-dimensional and two-dimensional (2D) hard-wall mesoscopic rings in the presence of both the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) in a perpendicular magnetic field. The Hamiltonian of the RSOI alone is mathematically equivalent to that of the DSOI alone using an SU(2) spin rotation transformation. Our theoretical results show that the interplay between the RSOI and DSOI results in an effective periodic potential, which consequently leads to gaps in the energy spectrum. This periodic potential also weakens and smoothens the oscillations of the persistent charge current and spin current and results in the localization of electrons. For a 2D ring with a finite width, higher radial modes destroy the periodic oscillations of persistent currents.

Spin-polarized transport through an Aharonov-Bohm interferometer with Rashba spin-orbit interaction

We study electron transport through an Aharonov-Bohm (AB) interferometer with a noninteracting quantum dot in each of its arms. Both a magnetic flux phi threading through the AB ring and the Rashba spin-orbit (SO) interaction inside the two dots are taken into account. Due to the existence of the SO interaction, the electrons flowing through different arms of the AB ring will acquire a spin-dependent phase factor in the tunnel-coupling strengths. This phase factor, as well as the influence of the magnetic flux, will induce various interesting interference phenomena. We show that the conductance and the local density of states can become spin polarized by tuning the magnetic flux and the Rashba interaction strength. Under certain circumstances, a pure spin-up or spin-down conductance can be obtained when a spin-unpolarized current is injected from the external leads. Therefore, the electron spin can be manipulated by adjusting the Rashba spin-orbit strength and the structure parameters. (c) 2006 American Institute of Physics.

Circular polarization of excitonic luminescence in CdTe quantum wells with excess electrons of different densities

The circular polarization of excitonic luminescence is studied in CdTe/Cd1-xMgxTe quantum wells with excess electrons of low density in an external magnetic field. It is observed that the circular polarization of X and X- emissions has opposite signs and is influenced by the excess electron density. If the electron density is relatively high so that the emission intensity of the negatively charged excitons X- is much stronger than that of the neutral excitons X, a stronger circular polarization degree of both X and X- emissions is observed. We find that the circular polarization of both X- and X emissions is caused by the spin polarization of the excess electrons due to the electron-spin-dependent nature of the formation of X-. If the electron density is relatively low and the emission intensity of X- is comparable to that of X, the circular polarization degree of X and X- emissions is considerably smaller. This fact is interpreted as due to a depolarization of the excess electron spins, which is induced by the spin relaxation of X-.

Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

Cyclotron-resonance mass of two-dimensional electrons in GaN/AlxGa1-xN heterostructures

The electron cyclotron-resonance (CR) mass of quasi-two-dimensional electrons in GaN/AlxGa1-xN heterostructures is studied theoretically. The correction to the CR mass due to electron-phonon interaction is investigated, taking into account band nonparabolicity, the occupation effect, and the screening of the electron-phonon coupling. The dependence of the CR mass on the electron density and on the magnetic field strength is displayed in detail, and the calculated CR mass agrees well with a recent experiment. We found that the effective electron-phonon coupling strength in GaN heterostructures is reduced below the bulk value.

The electron emission yield induced by the interaction of highly charged argon ions with silicon surface

The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.

Two-dimensional simulation of inductive plasma sources with self-consistent power deposition

A time averaged two-dimensional fluid model including an electromagnetic module with self-consistent power deposition was developed to simulate the transport of a low pressure radio frequency inductively coupled plasma source. Comparsions with experiment and previous simulation results show, that the fluid model is feasible in a certain range of gas pressure. In addition, the effects of gas pressure and power input have been discussed.

Behavior of ar plasma formed in a high-density plasma source - an ecr reactor

In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.

Codoping Na+ to modulate the spectroscopy and photoluminescence properties of Yb3+ in CaF2 laser crystal

kinds of Yb3+- and Na+-codoped CaF2 laser crystal with different Na:Yb ratios of 0, 1.5, and 10 are grown by the temperature gradient technique. Room-temperature absorption, photoluminescence spectra, and fluorescence lifetimes belonging to the transitions between ground state F-2(7/2) and excited state F-2(5/2) of Yb3+ ions in the three crystals are measured to study the effect of Na+. Experimental results show that codoping Na+ ions in different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in a CaF2 lattice in a large scope. (c) 2005 Optical Society of America

Sites structure and spectroscopic properties of Yb-doped and Yb, Na-codoped CaF2 laser crystals

For the first time, the effect of Na+ on crystal structure, valence state of Yb ions, spectroscopic properties of YbF3-doped CaF2 system was systematically studied. Na+ can greatly suppress the deoxidization of Yb3+ to Yb2+. Absorption and emission spectra showed codoping Na+ with different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in CaF2 lattice in a large scope. The emission lifetime and quantum efficiency of Yb3+ in CaF2 were greatly enhanced by the codopant of Na+. The potential laser performances of the new Yb, Na-codoped CaF2 crystals were predicted. (c) 2005 Elsevier B.V. All rights reserved.

利用DSC和EPR技术研究杜仲种子的贮藏条件

种子贮藏稳定性对于种质资源的长期保存具有重要意义，目前关于种子贮藏的最新理论为玻璃态理论，该理论认为种子的玻璃化有利于种子的长期贮藏。当种子处于玻璃态时，玻璃化物质的高度粘滞性降低了种子细胞内分子流动性，阻止了细胞质中分子的扩散，从而减少老化过程中细胞结构的损伤和化学组分的变化，延缓种子老化劣变反应速率，延长贮藏寿命。评价玻璃态的一个重要指标是玻璃化转变温度，当种子贮藏于玻璃化温度或以下10℃～30℃范围内时，种子具有最佳的贮藏稳定性。因此，检测种子的玻璃化转变温度对于种子的长期有效贮藏具有重要指导意义。 本研究将差示量热扫描技术（DSC）与电子顺磁共振波谱仪技术（EPR）应用于杜仲种子玻璃化转变温度方面的研究。在DSC方法中，选用4.4%～31.6%含水量范围的杜仲种胚分别进行了DSC图谱扫描。EPR方法选用3-羧基-2,2,5,5-四甲基吡咯烷-1-氧（3-carboxy-2,2,5,5-tetramethylpyrrolidine-1-oxyl，CP）和2,2,6,6-四甲基哌啶（4-hydroxy-2,2,6,6-tetramethyl-1-piperidinyloxy，TEMPO）作为探针标记杜仲种胚， 利用EPR技术测定不同含水量杜仲种胚的分子运动，通过对EPR图谱参数的分析计算，最终确定不同含水量杜仲种胚的玻璃化转变温度。 DSC实验结果显示，含水量为22.3%、28.0%、31.6%的杜仲种胚在0℃ 左右出现了一个水的熔融峰。该熔融峰的面积代表了自由水含量的多少，随着种胚含水量的降低该熔融峰面积减小。4.4%～31.6%含水量范围的杜仲种胚在-28℃左右还出现了一个熔融峰，推测此峰为杜仲种胚中某类物质熔融所形成的熔融峰。然而在此曲线上我们未观察到标志玻璃化转变的“台阶”出现。 CP-EPR实验的结果表明，利用EPR测定得到含水量为4.4%～11.6%的杜仲种胚在-110℃～20℃温度范围内，同一含水量的杜仲种胚随着温度的升高，分子运动速率加快;在同一温度条件下，高含水量的种胚比低含水量种胚的分子运动速率快。通过CP-EPR波谱两外缘峰最大距离（2Azz）的测定和数据统计分析，得到含水量为4.4%、5.7%、8.6%、10.3%、11.6%杜仲种胚的玻璃化转变温度分别约为44℃、25℃、4℃、-31℃、-43℃。可以把测定的杜仲种胚的这几个含水量的玻璃化转变温度与杜仲种子贮藏相结合，用于指导杜仲种子的贮藏。 TEMPO-EPR实验测定分析得到含水量为2.1%、3.4%、4.8%、8.3%、11.2% 的杜仲种胚的玻璃化转变温度分别为-21℃、-18℃、-24℃、-20℃、-27℃，玻璃化转变温度随含水量升高其变化的规律不明显，这与CP-EPR实验测得的结果有着较明显的差别。通过分析，认为对于脂质含量较高的杜仲种胚，随着含水量的降低，作为标记化合物的TEMPO随着脱水进入脂相，从而不能真实反映出不同含水量种胚的分子运动情况。与TEMPO标记相比，CP标记可能能够更真实地反映不同含水量杜仲种胚细胞质分子运动的情况，根据其分子运动情况得到的玻璃化转变温度更准确。

Transmission properties through a double quantum dot with a wave packet

The transmiss on time and tunneling probability of an electron through a double quantum dot are studied using the transfer matrix technique. The time-dependent Schrodinger equation is applied for a Gaussian wave packet passing through the double quantum clot. The numerical calculations are carried out for a double quantum clot consisting of GaAs/InAs material. We find that the electron tunneling resonance peaks split when the electron transmits through the double quantum dot. The splitting energy increases as the distance between the two quantum dots decreases. The transmission time can be elicited from the temporal evolution of the Gaussian wave packet in the double quantum dot. The transmission time increases quickly as the thickness of tire barrier increases. The lifetime of the resonance state is calculated tram the temporal evolution of the Gaussian-state at the centers of quantum dots.

Spectroscopy of long wavelength coupled quantum dots

We obtained a low density of coupled InAs/GaAs quantum dots (QDs) with an emission wavelength of around 1.3 mu m at room temperature. Atomic force microscopy and transmission electronic microscopy reveal that the dot size difference and the lateral displacement between the two dots are related to the spacer thickness. Spectroscopy of the coupled QD ensembles is considerably influenced by the spacer thickness.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.